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“Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J Kluwer Academic, s.l., page 63 (1997).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Laser thermotreatment of the SnO2layers”. Rembeza SI, Loginov VA, Svistova TV, Podkopaeva OI, Rembeza ES, van Landuyt J, Eurosensors XII, vols 1 and 2 , 481 (1998)
Abstract: The optical and electrical properties and pi ase composition of magnetron sputtered antimony-doped SnOx thin films are investigated before and after laser thermotreatment The temperature dependencies on mobility and concentration of free charges are measured by Van der Pauw method. The gas sensitivity of SnOx has been measured before and after laser thermotreatment.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Microscopy of gemmological materials”. van Landuyt J, van Bockstael MHG, van Royen J Vch, Weinheim, page 293 (1997).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
Times cited: 4
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“Microstructure of Mn-doped, spin-cast FeSi2”. Morimura T, Frangis N, Van Tendeloo G, van Landuyt J, Hasaka M, Hisatsune K, Journal of electron microscopy 46, 221 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 3
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“Morphology and defects in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Conference series of the Institute of Physics 164, 443 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
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“New intermediate defect configuration in Si studied by in situ HREM irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Conference series of the Institute of Physics 157, 43 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 77, 423 (1998)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 23
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“Precipitation behavior in Cu-Co alloy”. Takeda M, Shinohara G, Yamada H, Yoshida S, van Landuyt J, Hashimoto H, , 205 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Quantitative EFTEM study of germanium quantum dots”. Hens S, Stuer C, Bender H, Loo R, van Landuyt J, , 345 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Reliability of copper dual damascene influenced by pre-clean”. Tokei Z, Lanckmans F, van den Bosch G, Van Hove M, Maex K, Bender H, Hens S, van Landuyt J, Analysis Of Integrated Circuits , 118 (2002). http://doi.org/10.1109/IPFA.2002.1025629
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 5
DOI: 10.1109/IPFA.2002.1025629
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“Stress analysis with convergent beam electron diffraction around NMOS transistors”. Stuer G, Bender H, van Landuyt J, Eyben P, , 359 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
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“Structural aspects of CVD idamond wafers grown at different hydrogen flow rates”. Nistor L, van Landuyt J, Ralchenko V, Physica status solidi: A: applied research 171, 5 (1999). http://doi.org/10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
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“Structural studies of nanocrystalline diamond thin films”. Nistor LC, van Landuyt J, Ralchenko VG, Obratzova ED, Korothushenko KG, Smolin AA, Materials science forum 239-241, 115 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“TEM studies of processed Si device materials”. Vanhellemont J, Bender H, van Landuyt J, Conference series of the Institute of Physics 157, 393 (1997)
Abstract: Recent developments in the field of TEM characterisation of Si device materials are discussed and illustrated by a few case studies of material in different stages of various kinds of processing. Important challenges are the ever decreasing defect densities and device feature sizes. Defect delineation techniques using large area inspection tools yielding accurate coordinates of the defects to be studied have therefore become an essential part of the TEM analysis procedure. The possibility to transfer these defect coordinates without loss of accuracy to tools for local TEM specimen preparation is also a conditio sine qua non for a successful analysis. Insitu TEM remains important as dynamic processes can be observed and analysed under well defined experimental conditions. As case studies illustrating new developments, results are presented on defects in as-grown Ct silicon, on in-situ studies in processed silicon, on problem sites in advanced integrated circuit structures and on assessment of localised strain fields in the nm size scale.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“TEM study on precipitation behavior in Cu-Co alloys”. Takeda M, Suzuki N, Shinohara G, Endo T, van Landuyt J, Physica status solidi: A: applied research 168, 27 (1998). http://doi.org/10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 18
DOI: 10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
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“Een tempel voor elektronenmicroscopie “kijken naar atomen””. van Landuyt J, Fonds informatief 38, 13 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals”. Van Renterghem W, Karthauser S, Schryvers D, van Landuyt J, De Keyzer R, Van Roost C, , 167 (2000)
Abstract: Multishell tabular grains have a higher speed than pure AgBr tabular grains. Usually the shells differ in size and iodide content, but also the precipitation method for the iodide containing shells has an influence on the iodide incorporation. A TEM investigation was performed to determine the defect structure of multishell AgBr (111) tabular crystals containing a shell with a low iodide concentration and one with a high iodide concentration. The twins that induce tabular growth and stacking fault contrast in the region of the iodide shells have been observed, similar to previously studied AgBr/Ag(Br,I) coreshell crystals. Moreover in some of the crystals dislocations have been observed, sometimes even an entire network. The number of dislocations formed varies for the different methods of iodide addition. Also variations in average thickness between the different iodide addition methods have been observed. A higher number of dislocations and thicker crystals point towards a higher local concentration of iodide. These observations allow deciding which iodide incorporation method is most useful for a preferred dislocation pattern.
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
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“A 2a2b3c superstructure in hexagonal NiS1-x: a study by means of electron diffraction and HREM”. Lioutas CB, Manolikas C, Van Tendeloo G, van Landuyt J, Journal of crystal growth 126, 457 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 4
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“A 2a2a3c superstructure in hexagonal Ni1-xS : a study by means of electron-diffraction and HRTEM”. Lioutas CB, Manolikas C, Van Tendeloo G, van Landuyt J, Journal of crystal growth 126, 457 (1993). http://doi.org/10.1016/0022-0248(93)90051-W
Abstract: The high temperature phase of Ni1-xS has the NiAs-type structure. The coexistence of two superstructures, ''3a3a3c'' and ''2a2a3c'' with the basic phase is confirmed by means of electron diffraction. The 2a2a3c superstructure is studied by means of electron diffraction and high resolution electron microscopy. A structure model is proposed based on the periodic insertion of stacking faults in the NiAs-type basic structure and the ordering of vacancies in alternate metal-atom layers. Microtwinning in very narrow slabs is found to be a main feature of the 2a2a3c regions and two defect models are discussed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 4
DOI: 10.1016/0022-0248(93)90051-W
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“Conical, helically woud, graphite whiskers: a limliting member of the “fullerenes”?”.Amelinckx S, Luyten W, Krekels T, Van Tendeloo G, van Landuyt J, Journal of crystal growth 121, 543 (1992). http://doi.org/10.1016/0022-0248(92)90561-V
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 43
DOI: 10.1016/0022-0248(92)90561-V
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“Crystallography of fullerites and related graphene textures”. van Landuyt J, Van Tendeloo G, Amelinckx S, Zhang XF, Zhang XB, Luyten W, Materials science forum 150/151, 53 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Direct observation of clusters in some FCC alloys by HREM”. De Meulenaere P, Van Tendeloo G, van Landuyt J, Icem 13, 447 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Direct observation of laser-induced crystallization of a-C : H films”. Nistor LC, van Landuyt J, Ralchenko VG, Kononenko TV, Obraztsova ED, Strelnitsky VE, Applied physics A : materials science &, processing 58, 137 (1994). http://doi.org/10.1007/BF00332170
Abstract: The post-growth modification of diamond-like amorphous hydrogenated carbon a-C:H films by laser treatment has been studied by transmission electron microscopy and Raman spectroscopy. a-C:H films grown on Si substrates by benzene decomposition in a rf glow discharge were irradiated with 15 ns pulses of a KrF-excimer laser with fluences in the ran e of E = 50-700 mJ/cm(2). At fluences below 100 mJ/cm(2) an increase in the number of graphitic clusters and in their ordering was evidenced from Raman spectra, while the film structure remained amorphous according to electron microscopy and electron diffraction observations. At higher fluences the appearance of diamond particles of 2-7 nm size, embedded into the lower crystallized graphitic matrix, was observed and simultaneously a progressive growth of graphite nanocrystals with dimensions from 2 nm to 4 nm was deduced from Raman measurements. The maximum thickness of the crystallized surface layer (approximate to 400 nm) and the degree of laser annealing are limited by the film ablation which starts at E > 250 mJ/cm(2). The laser-treated areas lose their chemical inertness. In particular, chemical etching in chromium acid becomes possible, which may be used for patterning the highly inert carbon films.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 73
DOI: 10.1007/BF00332170
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“Dynamical electron diffraction in substitutionally disordered column structures”. De Meulenaere P, van Dyck D, Van Tendeloo G, van Landuyt J, Ultramicroscopy 60, 171 (1995). http://doi.org/10.1016/0304-3991(95)00040-8
Abstract: For column structures, such as fee-based alloys viewed along the cube direction, the concept of electron channelling through the atom columns is more and more used to interpret the corresponding HREM images. In the case of(partially) disordered columns, the projected potential approach which is used in the channelling description must be questioned since the arrangement of the atoms along the beam direction might affect the exit wave of the electrons. In this paper, we critically inspect this top-bottom effect using multi-slice calculations. A modified channelling theory is introduced which turns out to be very appropriate for the interpretation of these results. For substitutionally disordered column structures, it is also discussed how to link the chemical composition of the material to statistical data of the HREM image. This results in a convenient tool to discern images taken at different thicknesses and focus values.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 14
DOI: 10.1016/0304-3991(95)00040-8
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“Electron diffraction effects of conical, helically wound, graphite whiskers”. Luyten W, Krekels T, Amelinckx S, Van Tendeloo G, van Dyck D, van Landuyt J, Ultramicroscopy 49, 123 (1993). http://doi.org/10.1016/0304-3991(93)90219-N
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 14
DOI: 10.1016/0304-3991(93)90219-N
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“Electron diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals”. Goessens C, Schryvers D, van Dyck D, van Landuyt J, de Keyzer R, Icem 13 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
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“Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals”. Goessens C, Schryvers D, van Dyck D, van Landuyt J, de Keyzer R, Physica status solidi: A 143, 277 (1994). http://doi.org/10.1002/pssa.2211430211
Abstract: The occurrence and origin of diffuse intensity contours in electron micrographs of AgBr crystals are investigated. The observations are interpreted in terms of a model, which attributes diffuse scattering to the presence of predominant atom or vacancy clusters of a particular polyhedral type. It is shown that irrespective of the crystal morphology, interstitial Ag ions order in AgBr material in clusters of finite size along 001 type planes. A different geometry of the diffuse intensity locus observed for triangular and hexagonal tabular grains is explained in terms of the different twin plane morphology of these grains.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 7
DOI: 10.1002/pssa.2211430211
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“An electron microscopic study of highly oriented undoped and FeCl3-doped poly (p-phenylenevinylene)”. Zhang XB, Van Tendeloo G, van Landuyt J, van Dyck D, Briers J, Bao Y, Geise HJ, Macromolecules 29, 1554 (1996). http://doi.org/10.1021/ma9513067
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 5.8
Times cited: 10
DOI: 10.1021/ma9513067
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“Electron microscopy and diffraction study of the composition dependency of the 3R microtwinned martensite in Ni-Al”. Schryvers D, de Saegher B, van Landuyt J, Materials research bulletin 26, 57 (1991)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.288
Times cited: 11
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“Electron microscopy and mass-spectrometry study of In GaAsP/InP heterostructures (p-i-n diodes) grown by liquid phase epitaxy”. Volkov VV, Luyten W, van Landuyt J, Férauge C, Oksenoid KG, Gijbels R, Vasilev MG, Shelyakin AA, Lazarev VB, Physica status solidi: A: applied research 140, 73 (1993). http://doi.org/10.1002/pssa.2211400105
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 7
DOI: 10.1002/pssa.2211400105
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