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  Author Title Year Publication Volume Times cited Additional Links Links
Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing 1998 Applied physics letters 72 16 UA library record; WoS full record; WoS citing articles pdf doi
Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays 1999 Applied physics letters 75 481 UA library record; WoS full record; WoS citing articles pdf doi
Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer 2000 Applied physics letters 77 44 UA library record; WoS full record; WoS citing articles pdf doi
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. Interaction of a Ti-capped Co thin film with Si3N4 2000 Applied physics letters 77 3 UA library record; WoS full record; WoS citing articles pdf doi
Xu, T.; Wang, P.; Fang, P.; Kan, Y.; Chen, L.; Vleugels, J.; Van der Biest, O.; van Landuyt, J. Phase assembly and microstructure of CeO2-doped ZrO2 ceramics prepared by spark plasma sintering 2005 Journal of the European Ceramic Society 25 13 UA library record; WoS full record; WoS citing articles doi
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures 2000 Physical review : B : condensed matter and materials physics 61 27 UA library record; WoS full record; WoS citing articles url doi
Ahenach, J.; Cool, P.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. Influence of water on the pillaring of montmorillonite with aminopropyltriethoxysilane 1999 Physical chemistry, chemical physics 1 10 UA library record; WoS full record; WoS citing articles doi
Ignatova, V.A.; Lebedev, O.I.; Wätjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation 2002 Microchimica acta 139 3 UA library record; WoS full record; WoS citing articles doi
Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J. Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application 2000 Sensors and actuators : B : chemical 68 51 UA library record; WoS full record; WoS citing articles doi
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation 2001 Institute of physics conference series UA library record; WoS full record;
van Landuyt, J.; Van Tendeloo, G. Charcaterization by high-resolution transmission electron microscopy 1998 UA library record; WoS full record;
De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy 2002 UA library record; WoS full record;
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation 1999 Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. Comparative study of structural properties and photoluminescence in InGaN layers with a high In content 2000 Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS 5 UA library record; WoS full record; pdf
Schryvers, D.; Goessens, C.; van Renterghem, W.; van Landuyt, J.; de Keyzer, R. Conventional and HREM study of structural defects in nanostructured silver halides 1998 UA library record
Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study 2000 UA library record; WoS full record;
van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. Defect related growth of tabular AgCl(100) crystals: a TEM study 1998 UA library record; WoS full record;
van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. Defects in AgCl and AgBr(100) tabular crystals studied by TEM 1998 UA library record
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. EFTEM study of plasma etched low-k Si-O-C dielectrics 2001 Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. Electron microscopy: principles and fundamentals 1997 UA library record
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization 2000 Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA 338-3 2 UA library record; WoS full record; WoS citing articles
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM 1999 Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171 40 UA library record; WoS full record; WoS citing articles doi
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM 1999 Physica status solidi: A: applied research 171 40 UA library record; WoS full record; WoS citing articles
Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. Handbook of microscopy: applications in materials science, solid-state physics and chemistry 1997 UA library record
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. High resolution TEM observation of in situ colloid formation in CaF2 crystals 1997 Materials science forum 239-241 3 UA library record; WoS full record; WoS citing articles
van Landuyt, J.; Van Tendeloo, G. HREM for characterisation of nanoscale microstructures 1998 UA library record
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. HREM investigation of a Fe/GaN/Fe tunnel junction 2001 Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England UA library record; WoS full record;
Nistor, L.C.; van Landuyt, J.; Dincã, G. HREM of defects in cubic boron nitride single crystals 1998 UA library record; WoS full record;
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J. In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure 1997 Conference series of the Institute of Physics 157 1 UA library record; WoS full record; WoS citing articles
van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. The influence of crystal thickness on the image tone 2003 Journal of imaging science 47 UA library record; WoS full record; WoS citing articles
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