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Author Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L.
Title Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research Abbreviated Journal Nucl Instrum Meth B
Volume B112 Issue Pages 133-138
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1996UW20100029 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited 4 Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:15453 Serial 2423
Permanent link to this record
 
 
Author Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.
Title Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope Type P1 Proceeding
Year 1996 Publication Materials Research Society symposium proceedings Abbreviated Journal
Volume 404 Issue Pages 189-194
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Wuhan Editor
Language Wos A1996BG19E00025 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0272-9172 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:15457 Serial 2424
Permanent link to this record
 
 
Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.
Title On the interpretation of HREM images of partially ordered alloys Type A1 Journal article
Year 1995 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 60 Issue 2 Pages 265-282
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1995TZ14700008 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.436 Times cited 20 Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:13014 Serial 2438
Permanent link to this record
 
 
Author Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J.
Title Ordering and defects in BanTaxTiyO3n ternary oxides Type P1 Proceeding
Year 1994 Publication Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences Abbreviated Journal
Volume Issue Pages 869-870
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1994BE09Y00422 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:104477 Serial 2504
Permanent link to this record
 
 
Author Van Tendeloo, G.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Verheijen, M.A.; van Loosdrecht, P.H.M.; Meijer, G.
Title Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy Type A1 Journal article
Year 1992 Publication Journal of physical chemistry Abbreviated Journal
Volume 96 Issue Pages 7424-7430
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1992JM58600054 Publication Date 2005-03-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3654;1541-5740; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 33 Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:4101 Serial 2594
Permanent link to this record
 
 
Author Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.
Title Photoelectric and electrical responses of several erbium silicide/silicon interfaces Type A1 Journal article
Year 1996 Publication Applied surface science T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE Abbreviated Journal Appl Surf Sci
Volume 102 Issue Pages 173-177
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1996VJ86100039 Publication Date 2003-05-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.711 Times cited 3 Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:104392 Serial 2611
Permanent link to this record
 
 
Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond
Volume 11 Issue 11 Pages 1194-1202
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Address
Corporate Author Thesis
Publisher Inst Materials Place of Publication London Editor
Language Wos A1995TQ95100016 Publication Date 2014-01-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.995 Times cited 7 Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:95911 Serial 2654
Permanent link to this record
 
 
Author Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
Title Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope Type A3 Journal article
Year 1995 Publication Materials science and technology Abbreviated Journal
Volume 11 Issue Pages 1194-1204
Keywords A3 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1995TQ95100016 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 7 Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:13297 Serial 2655
Permanent link to this record
 
 
Author Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.; Dinescu, M.
Title TEM study of laser induced phase transition in iron thin films Type A1 Journal article
Year 1994 Publication Materials research bulletin Abbreviated Journal Mater Res Bull
Volume 29 Issue 1 Pages 63-71
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Laser induced phase transition from b.c.c.(alpha) to f.c.c.(gamma) iron thin films is studied by high resolution TEM. The iron film has been covered on both sides with carbon layers to protect it against oxidation. Single pulse, tau FWHM = 20ns KrF (lambda = 248nm) excimer laser irradiation was performed in air with the film on the substrate. The laser pulse acts like a heat pulse followed by a rapid quenching revealing sequential aspects of the phase transition process. The presence of a fine mixture of the alpha + gamma phases between the alpha and gamma regions of the film has been interpreted as an incomplet transformation. The results are explained by assuming that the transformation took place via a phonon drag mechanism.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1994ML03000008 Publication Date 2003-06-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0025-5408; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.288 Times cited 2 Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:99945 Serial 3488
Permanent link to this record
 
 
Author Zhang, Z.; Ma, L.N.; Liao, X.Z.; van Landuyt, J.
Title A transmission electron-microscopy study of crystalline surface domains on al-co decagonal quasi-crystals and the \tau2-Al13CO4 approximant Type A1 Journal article
Year 1994 Publication Philosophical magazine letters Abbreviated Journal Phil Mag Lett
Volume 70 Issue 5 Pages 303-310
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Twin-domains of a b.c.c. crystalline phase with a = 0.29 nm have been found in a surface layer on surfaces of Al-Co decagonal quasicrystals and the coexisting tau(2)-Al13Co4 crystalline approximant. These surface layer domains are introduced during the preparation of electron microscopy thin films by ion milling.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1994PQ20900008 Publication Date 2007-07-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0950-0839;1362-3036; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.087 Times cited 4 Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:99816 Serial 3715
Permanent link to this record
 
 
Author Zhang, Z.; Geng, W.; van Landuyt, J.; Van Tendeloo, G.
Title A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals Type A1 Journal article
Year 1995 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal
Volume 71 Issue 5 Pages 1177-1189
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1995QW79500016 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0141-8610; 1364-2804 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 7 Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:13296 Serial 3721
Permanent link to this record
 
 
Author Van Tendeloo, G.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; Amelinckx, S.
Title Up close: Center for Electron Microscopy of Materials Science at the University of Antwerp Type A1 Journal article
Year 1994 Publication MRS bulletin Abbreviated Journal Mrs Bull
Volume Issue Pages 57-59
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Pittsburgh, Pa Editor
Language Wos A1994PH66300015 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0883-7694 ISBN Additional Links UA library record; WoS full record;
Impact Factor 5.667 Times cited Open Access
Notes Approved (down) no
Call Number UA @ lucian @ c:irua:9996 Serial 3821
Permanent link to this record
 
 
Author Schryvers, D.; Van Landuyt, J.
Title Electron microscopy study of twin sequences and branching in NissAl34 3R martensite Type A3 Journal Article
Year 1992 Publication ICOMAT Abbreviated Journal
Volume Issue Pages
Keywords A3 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Abstract Microtwin sequences in Ni66Al34 martensite plates of different size were investigated by electron microscopy. Although mostly irregular sequences were observed an average twin width w can be determined which increases with twin length L following the expected relation w ~ sqrt(L). High resolution electron microscopy was used to study the twin branching close to the plate boundaries and an atomic model for the branching of a microtwin and the changes in twin thickness is suggested
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links
Impact Factor Times cited Open Access
Notes Approved (down) no
Call Number EMAT @ emat @ Serial 5054
Permanent link to this record
 
 
Author Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K.
Title Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation Type A1 Journal article
Year 2001 Publication Institute of physics conference series Abbreviated Journal
Volume Issue 169 Pages 481-484
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0818-4 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:95163 Serial 311
Permanent link to this record
 
 
Author van Landuyt, J.; Van Tendeloo, G.
Title Charcaterization by high-resolution transmission electron microscopy Type H3 Book chapter
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 187-190
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Stt Place of Publication Den Haag Editor
Language Wos A1990DC39700012 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:29685 Serial 335
Permanent link to this record
 
 
Author De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C.
Title Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy Type P1 Proceeding
Year 2002 Publication Abbreviated Journal
Volume Issue Pages 183-194
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case.
Address
Corporate Author Thesis
Publisher Place of Publication S.l. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1-56677-344-X ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:94950 Serial 344
Permanent link to this record
 
 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
Title Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation Type A1 Journal article
Year 1999 Publication Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND Abbreviated Journal Inst Phys Conf Ser
Volume Issue 164 Pages 495-498
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000166835300106 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0650-5; 0951-3248 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:102918 Serial 376
Permanent link to this record
 
 
Author Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al.
Title Comparative study of structural properties and photoluminescence in InGaN layers with a high In content Type A1 Journal article
Year 2000 Publication Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS Abbreviated Journal Mrs Internet J N S R
Volume 5 Issue s:[1] Pages art. no.-W11.38
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
Address
Corporate Author Thesis
Publisher Materials research society Place of Publication Warrendale Editor
Language Wos 000090103600097 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1092-5783 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:103471 Serial 423
Permanent link to this record
 
 
Author Schryvers, D.; Goessens, C.; van Renterghem, W.; van Landuyt, J.; de Keyzer, R.
Title Conventional and HREM study of structural defects in nanostructured silver halides Type P3 Proceeding
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 1-6
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Antwerpen Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:29681 Serial 509
Permanent link to this record
 
 
Author Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B.
Title Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study Type P1 Proceeding
Year 2000 Publication Abbreviated Journal
Volume Issue Pages 38-43
Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Defects in AgG tabular crystals with {111} surfaces are characterised by transmission electron microscopy (TEM) and their influence on the growth process is discussed. In the tabular crystals, twins parallel to the tabular face as well as dislocations along different directions are observed. The twins induce the tabular growth, while the dislocations do not influence the morphology. In 10 to 30% of the crystals that have been characterised, thickness growth is observed and it is shown that in all cases twins on other planes than the tabular ones are present. Two configurations occur more frequently and are analysed in detail. For the first group, twins parallel to the tabular face as well as a microtwin along a non-parallel {111} plane and ending inside the crystal are present. In the crystals of the second group only one extra non-parallel twin occurs giving rise to a bicrystal built up by a tetrahedral shaped part and a flat triangular or trapezoidal part. More complex twin configurations give rise to various, less characteristic morphologies.
Address
Corporate Author Thesis
Publisher Soc imaging science technology Place of Publication Springfield Editor
Language Wos 000183315900012 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-89208-229-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:95777 Serial 617
Permanent link to this record
 
 
Author van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.
Title Defect related growth of tabular AgCl(100) crystals: a TEM study Type P1 Proceeding
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 389-390
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cancun Editor
Language Wos 000077019900191 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:29678 Serial 618
Permanent link to this record
 
 
Author van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R.
Title Defects in AgCl and AgBr(100) tabular crystals studied by TEM Type P3 Proceeding
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 6-11
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Antwerpen Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:29680 Serial 628
Permanent link to this record
 
 
Author Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J.
Title EFTEM study of plasma etched low-k Si-O-C dielectrics Type A1 Journal article
Year 2001 Publication Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND Abbreviated Journal
Volume Issue 169 Pages 415-418
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0818-4; 0951-3248 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:103432 Serial 877
Permanent link to this record
 
 
Author Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G.
Title Electron microscopy: principles and fundamentals Type ME1 Book as editor or co-editor
Year 1997 Publication Abbreviated Journal
Volume Issue Pages
Keywords ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Vch Place of Publication Weinheim Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 3-527-29479-1 Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:22089 Serial 967
Permanent link to this record
 
 
Author Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al.
Title Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization Type A1 Journal article
Year 2000 Publication Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA Abbreviated Journal Mater Sci Forum
Volume 338-3 Issue Pages 309-312
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
Address
Corporate Author Thesis
Publisher Trans tech publications ltd Place of Publication Zurich-uetikon Editor
Language Wos 000165996700075 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:104262 Serial 1071
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Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
Title Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM Type A1 Journal article
Year 1999 Publication Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland Abbreviated Journal Phys Status Solidi A
Volume 171 Issue 1 Pages 147-157
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Address
Corporate Author Thesis
Publisher Wiley Place of Publication Berlin Editor
Language Wos 000078539700020 Publication Date 2002-09-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 40 Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:95798 Serial 1152
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Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
Title Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM Type A1 Journal article
Year 1999 Publication Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A
Volume 171 Issue 1 Pages 147-157
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos 000078539700020 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 40 Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:29687 Serial 1153
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Author Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G.
Title Handbook of microscopy: applications in materials science, solid-state physics and chemistry Type ME1 Book as editor or co-editor
Year 1997 Publication Abbreviated Journal
Volume Issue Pages
Keywords ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Vch Place of Publication Weinheim Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 3-527-29280-2 Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:21417 Serial 1407
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Author Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.
Title High resolution TEM observation of in situ colloid formation in CaF2 crystals Type A1 Journal article
Year 1997 Publication Materials science forum Abbreviated Journal
Volume 239-241 Issue Pages 671-674
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos A1997BH33W00145 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 3 Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:21404 Serial 1460
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Author van Landuyt, J.; Van Tendeloo, G.
Title HREM for characterisation of nanoscale microstructures Type P3 Proceeding
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 15-18
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Kyoto Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved (down) Most recent IF: NA
Call Number UA @ lucian @ c:irua:25687 Serial 1499
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