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“Conversion of platelets into dislocation loops and voidite formation in type IaB diamonds”. Evans T, Kiflawi I, Luyten W, Van Tendeloo G, Woods GS, Proceedings of the Royal Society of London: series A: mathematical and physical sciences 449, 295 (1995). http://doi.org/10.1098/rspa.1995.0045
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.192
Times cited: 32
DOI: 10.1098/rspa.1995.0045
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“Characterization of double structure tabular microcrystals of silver halide emulsions by means of electron energy-loss spectroscopy, zero-loss electron spectroscopic imaging and energy dispersive X-ray microanalysis”. Oleshko V, Gijbels R, Jacob W, Lakiere F, van Daele A, Silaev E, Kaplun L, Microscopy, microanalysis, microstructures 6, 79 (1995). http://doi.org/10.1051/mmm:1995108
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 7
DOI: 10.1051/mmm:1995108
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“Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy”. Luyten W, Volkov VV, van Landuyt J, Amelinckx S, Férauge C, Gijbels R, Vasilev MG, Shelyakin AA, Lazarev VB, Physica status solidi: A: applied research 140, 453 (1993). http://doi.org/10.1002/pssa.2211400216
Abstract: Broad area as well as buried heterostructure lasers based on In0.72Ga0.28As0.62P0.38/InP and emitting at 1.3 mum are grown by liquid phase epitaxy and are studied in detail by means of transmission electron microscopy, X-ray diffraction, secondary ion mass-spectrometry, and electroluminescence. The InGaAsP epilayer is found to be well lattice-matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in the InGaAsP alloy. We also report on the high performance characteristics of the infrared lasers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 3
DOI: 10.1002/pssa.2211400216
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“Structural defects and epitaxial rotation of C60 and C70 (111) films on GeS(001)”. Bernaerts D, Van Tendeloo G, Amelinckx S, Hevesi K, Gensterblum G, Yu LM, Pireaux JJ, Grey F, Bohr J, Journal of applied physics 80, 3310 (1996). http://doi.org/10.1063/1.363241
Abstract: A transmission electron microscopy study of epitaxial C-60 and C-70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C-60 and C-70 crystals, are studied. Small misalignments of the overlayers with respect to the orientation of the substrate, so-called epitaxial rotations, exist mainly in C-70 films, but also sporadically in the C-60 overlayers. A simple symmetry model, previously used to predict the rotation of hexagonal overlayers on hexagonal substrates, is numerically tested and applied to the present situation. Some qualitative conclusions concerning the substrate-film interaction are deduced. (C) 1996 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.183
Times cited: 6
DOI: 10.1063/1.363241
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