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Microstructure of artificial [100] 45 degrees twist grain boundaries in YBa2Cu3O7-delta”. Verbist K, Tafuri F, Granozio FM, Di Chiara S, Van Tendeloo G, Electron Microscopy 1998, Vol 2: Materials Science 1 , 593 (1998)
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Microstructure of artificial [100] 45°, twist grain boundaries in YBa2Cu3O7-”. Verbist K, Tafuri F, Miletto Granozio F, di Chiara S, Van Tendeloo G, Electron microscopy: vol. 2 , 593 (1998)
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Microstructure of CuXMo6S8 Chevrel phase thin films on R-plane sapphire”. Richard O, Van Tendeloo G, Lemée N, le Lannic J, Guilloux-Viry M, Perrin A, Journal of electron microscopy 49, 493 (2000). http://doi.org/10.1093/oxfordjournals.jmicro.a023834
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Microstructure of Mn-doped, spin-cast FeSi2”. Morimura T, Frangis N, Van Tendeloo G, van Landuyt J, Hasaka M, Hisatsune K, Journal of electron microscopy 46, 221 (1997)
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The microstructure of ordered Ba(Mg1/3Ta2/3)O3”. Lei CH, Van Tendeloo G, Amelinckx S, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 82, 349 (2002). http://doi.org/10.1080/01418610110068076
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Microstructure of quenched Ni-rich Ni-Ti shape memory alloys”. Somsen C, Kästner J, Wassermann EF, Boullay P, Schryvers D, Journal de physique: 4 T2 –, 8th European Symposium on Martensitic Transformations (ESOMAT2000), SEP 04-08, 2000, COMO, ITALY 11, 445 (2001). http://doi.org/10.1051/jp4:2001874
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Microstructure of tough polycrystalline natural diamond”. Chen JH, Van Tendeloo G, Journal of electron microscopy 48, 121 (1999). http://doi.org/10.1093/oxfordjournals.jmicro.a023658
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Misfit accommodation of epitaxial La1-xAxMnO3 (A=Ca, Sr) thin films”. Lebedev OI, Van Tendeloo G, Amelinckx S, International journal of inorganic materials 3, 1331 (2001). http://doi.org/10.1016/S1466-6049(01)00155-6
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Modeling aspects of plasma-enhanced chemical vapor deposition of carbon-based materials”. Neyts E, Mao M, Eckert M, Bogaerts A CRC Press, Boca Raton, Fla, page 245 (2012).
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Modeling network for argon glow discharge plasmas with copper cathode”. Bogaerts A, Gijbels R Nova, New York, page 1 (2002).
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Modeling network for argon glow discharges: the output cannot be better than the input”. Bogaerts A, Gijbels R American Institute of Physics, Melville, N.Y., page 49 (2000).
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Modeling of a dielectric barrier discharge used as a flowing chemical reactor”. Petrovic D, Martens T, van Dijk J, Brok WJM, Bogaerts A, , 262 (2008)
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Modeling of a dielectric barrier discharge used as a flowing chemical reactor”. Petrović, D, Martens T, van Dijk J, Brok WJM, Bogaerts A, Journal of physics : conference series 133, 012023 (2008). http://doi.org/10.1088/1742-6596/133/1/012023
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Modeling of bombardment induced oxidation of silicon with and without oxygen flooding”. de Witte H, Vandervorst W, Gijbels R, , 327 (1998)
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Modeling of glow discharge ion sources for mass spectrometry: potentials and limitations”. Gijbels R, Bogaerts A, Spectroscopy 9, 8 (1997)
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Modeling of glow discharges: what can we learn from it?”.Bogaerts A, Gijbels R, Analytical chemistry A-pages 69, 719 (1997)
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Modeling of magnetron and glow discharges”. Bogaerts A, Kolev I, Le vide: science, technique et applications 57, 296 (2002)
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Modeling of plasma and plasma-surface interactions for medical, environmental and nano applications”. Bogaerts A, Aerts R, Snoeckx R, Somers W, Van Gaens W, Yusupov M, Neyts E, Journal of physics : conference series 399, 012011 (2012). http://doi.org/10.1088/1742-6596/399/1/012011
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Modeling of radio-frequency and direct current glow discharges in argon”. Bogaerts A, Gijbels R, Journal of technical physics 41, 183 (2000)
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Modeling of the magnetron discharge”. Bogaerts A, Kolev I, Buyle G Springer, Berlin, page 61 (2008).
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Modeling of the sputtering process of cubic silver halide microcrystals and its relevance in depth profiling by secondary ion-mass spectrometry (SIMS)”. Lenaerts J, Verlinden G, Ignatova VA, van Vaeck L, Gijbels R, Geuens I, Fresenius' journal of analytical chemistry 370, 654 (2001). http://doi.org/10.1007/s002160100880
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Modeling of the synthesis and subsequent growth of nanoparticles in dusty plasmas”. de Bleecker K, Bogaerts A, High temperature material processes 11, 21 (2007). http://doi.org/10.1615/HighTempMatProc.v11.i1.20
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Modeling PECVD growth of nanostructured carbon materials”. Neyts E, Bogaerts A, van de Sanden MCM, High temperature material processes 13, 399 (2009). http://doi.org/10.1615/HighTempMatProc.v13.i3-4.120
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Modeling the growth of SWNTs and graphene on the atomic scale”. Neyts EC, Bogaerts A, ECS transactions 45, 73 (2012). http://doi.org/10.1149/1.3700454
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Wendelen W (2014) Modeling ultrashort pulsed laser induced electron emission. Antwerpen
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Modelleren van plasmas gebruikt voor de afzetting van dunne lagen”. Herrebout D, Bogaerts A, Gijbels R, Chemie magazine , 34 (2004)
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Modelling of a dielectric barrier glow discharge at atmospheric pressure in nitrogen”. Madani M, Bogaerts A, Gijbels R, Vangeneugden D, , 130 (2002)
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Modelling of formation and transport of nanoparticles in silane discharges”. de Bleecker K, Bogaerts A, Goedheer WJ, Gijbels R, , 0 (2004)
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Modelling of radio frequency capacitively coupled plasma at intermediate pressures”. Berezhnoi S, Kaganovich I, Bogaerts A, Gijbels R Kluwer Academic, Dordrecht, page 525 (1999).
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Modification of the 2D electronic properties in Si-δ-doped InSb due to surface effects”. de Keyser A, Bogaerts R, van Bockstal L, Herlach F, Karavolas VC, Peeters FM, van de Graaf W, Borghs G, , 383 (1997)
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