“Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering”. Kálna K, Mo×ko M, Peeters FM, Applied physics letters 68, 117 (1996)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.302
Times cited: 10
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“InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 60, 868 (1992). http://doi.org/10.1063/1.106490
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.302
Times cited: 20
DOI: 10.1063/1.106490
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“InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 600, 3256 (1992). http://doi.org/10.1063/1.106711
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.302
Times cited: 32
DOI: 10.1063/1.106711
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“Nonlinear transport phenomena in a triangular quantum well”. Kastalsky A, Peeters FM, Chan WK, Florez LT, Harbison JP, Applied physics letters 59, 1708 (1991)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.302
Times cited: 11
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“Metal-insulator transition of SrVO 3 ultrathin films embedded in SrVO 3 / SrTiO 3 superlattices”. Wang J, Gauquelin N, Huijben M, Verbeeck J, Rijnders G, Koster G, Applied Physics Letters 117, 133105 (2020). http://doi.org/10.1063/5.0020615
Abstract: The metal-insulator transition (MIT) in strongly correlated oxides is a topic of great interest for its potential applications, such as Mott field effect transistors and sensors. We report that the MIT in high quality epitaxial SrVO3 (SVO) thin films is present as the film thickness is reduced, lowering the dimensionality of the system, and electron-electron correlations start to become the dominant interactions. The critical thickness of 3 u.c is achieved by avoiding effects due to off-stoichiometry using optimal growth conditions and excluding any surface effects by a STO capping layer. Compared to the single SVO thin films, conductivity enhancement in SVO/STO superlattices is observed. This can be explained by the interlayer coupling effect between SVO sublayers in the superlattices. Magnetoresistance and Hall measurements indicate that the dominant driving force of MIT is the electron–electron interaction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4
Times cited: 8
DOI: 10.1063/5.0020615
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“2D ferromagnetism at finite temperatures under quantum scrutiny”. Vanherck J, Bacaksiz C, Sorée B, Milošević, MV, Magnus W, Applied Physics Letters 117, 052401 (2020). http://doi.org/10.1063/5.0015619
Abstract: Recent years have seen a tremendous rise of two-dimensional (2D) magnetic materials, several of which were verified experimentally. However, most of the theoretical predictions to date rely on ab initio methods, at zero temperature and fluctuation-free, while one certainly expects detrimental quantum fluctuations at finite temperatures. Here, we present the solution of the quantum Heisenberg model for honeycomb/hexagonal lattices with anisotropic exchange interaction up to third nearest neighbors and in an applied field in arbitrary direction, which answers the question whether long-range magnetization can indeed survive in the ultrathin limit of materials, up to which temperature, and what the characteristic excitation (magnon) frequencies are, all essential to envisaged applications of magnetic 2D materials. We find that long-range magnetic order persists at finite temperature for materials with overall easy-axis anisotropy. We validate the calculations on the examples of monolayers CrI3, CrBr3, and MnSe2. Moreover, we provide an easy-to-use tool to calculate Curie temperatures of new 2D computational materials.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4
Times cited: 8
DOI: 10.1063/5.0015619
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“Monolayer 1T-LaN₂, : Dirac spin-gapless semiconductor of p-state and Chern insulator with a high Chern number”. Li L, Kong X, Chen X, Li J, Sanyal B, Peeters FM, Applied Physics Letters 117, 143101 (2020). http://doi.org/10.1063/5.0023531
Abstract: Two-dimensional transition-metal dinitrides have attracted considerable attention in recent years due to their rich magnetic properties. Here, we focus on rare-earth-metal elements and propose a monolayer of lanthanum dinitride with a 1T structural phase, 1T-LaN2. Using first-principles calculations, we systematically investigated the structure, stability, magnetism, and band structure of this material. It is a flexible and stable monolayer exhibiting a low lattice thermal conductivity, which is promising for future thermoelectric devices. The monolayer shows the ferromagnetic ground state with a spin-polarized band structure. Two linear spin-polarized bands cross at the Fermi level forming a Dirac point, which is formed by the p atomic orbitals of the N atoms, indicating that monolayer 1T-LaN2 is a Dirac spin-gapless semiconductor of p-state. When the spin-orbit coupling is taken into account, a large nontrivial indirect bandgap (86/354meV) can be opened at the Dirac point, and three chiral edge states are obtained, corresponding to a high Chern number of C=3, implying that monolayer 1T-LaN2 is a Chern insulator. Importantly, this kind of band structure is expected to occur in more monolayers of rare-earth-metal dinitride with a 1T structural phase.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4
Times cited: 19
DOI: 10.1063/5.0023531
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“Substrate dependent terahertz response of monolayer WS₂”. Dong HM, Tao ZH, Li LL, Huang F, Xu W, Peeters FM, Applied Physics Letters 116, 1 (2020). http://doi.org/10.1063/5.0006617
Abstract: We investigate experimentally the terahertz (THz) optoelectronic properties of monolayer (ML) tungsten disulfide (WS2) placed on different substrates using THz time-domain spectroscopy (TDS). We find that the THz optical response of n-type ML WS2 depends sensitively on the choice of the substrate. This dependence is found to be a consequence of substrate induced charge transfer, extra scattering centers, and electronic localization. Through fitting the experimental results with the Drude-Smith formula, we can determine the key sample parameters (e.g., the electronic relaxation time, electron density, and electronic localization factor) of ML WS2 on different substrates. The temperature dependence of these parameters is examined. Our results show that the THz TDS technique is an efficient non-contact method that can be utilized to characterize and investigate the optoelectronic properties of nano-devices based on ML WS2.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4
Times cited: 17
DOI: 10.1063/5.0006617
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“The magnetic, electronic, and light-induced topological properties in two-dimensional hexagonal FeX₂, (X=Cl, Br, I) monolayers”. Kong X, Li L, Liang L, Peeters FM, Liu X-J, Applied Physics Letters 116, 192404 (2020). http://doi.org/10.1063/5.0006446
Abstract: Using Floquet-Bloch theory, we propose to realize chiral topological phases in two-dimensional (2D) hexagonal FeX2 (X=Cl, Br, I) monolayers under irradiation of circularly polarized light. Such 2D FeX2 monolayers are predicted to be dynamically stable and exhibit both ferromagnetic and semiconducting properties. To capture the full topological physics of the magnetic semiconductor under periodic driving, we adopt ab initio Wannier-based tight-binding methods for the Floquet-Bloch bands, with the light-induced bandgap closings and openings being obtained as the light field strength increases. The calculations of slabs with open boundaries show the existence of chiral edge states. Interestingly, the topological transitions with branches of chiral edge states changing from zero to one and from one to two by tuning the light amplitude are obtained, showing that the topological Floquet phase of high Chern number can be induced in the present Floquet-Bloch systems. Published under license by AIP Publishing.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4
Times cited: 18
DOI: 10.1063/5.0006446
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“Identifying alternative ferroelectric materials beyond Hf(Zr)O-₂”. Guo J, Clima S, Pourtois G, Van Houdt J, Applied Physics Letters 117, 262903 (2020). http://doi.org/10.1063/5.0028611
Abstract: A database-driven approach combined with ab initio density functional theory (DFT) simulations is used to identify and simulate alternative ferroelectric materials beyond Hf(Zr)O-2. The database-driven screening method identifies a class of wurtzite ferroelectric materials. DFT simulations of wurtzite magnesium chalcogenides, including MgS, MgSe, and MgTe, show their potential to achieve improved ferroelectric (FE) stability, simple atomistic unit cell structure, and large FE polarization. Strain engineering can effectively modulate the FE switching barrier height for facilitating FE switching. The effect of the piezoelectric property on the FE switching barrier heights is also examined.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4
DOI: 10.1063/5.0028611
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“Overcoming contrast reversals in focused probe ptychography of thick materials: An optimal pipeline for efficiently determining local atomic structure in materials science”. Gao C, Hofer C, Jannis D, Béché, A, Verbeeck J, Pennycook TJ, Applied physics letters 121, 081906 (2022). http://doi.org/10.1063/5.0101895
Abstract: Ptychography provides highly efficient imaging in scanning transmission electron microscopy (STEM), but questions have remained over its applicability to strongly scattering samples such as those most commonly seen in materials science. Although contrast reversals can appear in ptychographic phase images as the projected potentials of the sample increase, we show here how these can be easily overcome by a small amount of defocus. The amount of defocus is small enough that it not only can exist naturally when focusing using the annular dark field (ADF) signal but can also be adjusted post acquisition. The ptychographic images of strongly scattering materials are clearer at finite doses than other STEM techniques and can better reveal light atomic columns within heavy lattices. In addition, data for ptychography can now be collected simultaneously with the fastest of ADF scans. This combination of sensitivity and interpretability presents an ideal workflow for materials science.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4
Times cited: 9
DOI: 10.1063/5.0101895
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“Two-dimensional semimetal states in transition metal trichlorides : a first-principles study”. Yu Y, Xie X, Liu X, Li J, Peeters FM, Li L, Applied physics letters 121, 112405 (2022). http://doi.org/10.1063/5.0105605
Abstract: The two-dimensional (2D) transition metal trihalide (TMX3, X = Cl, Br, I) family has attracted considerable attention in recent years due to the realization of CrCl3, CrBr3, and CrI3 monolayers. Up to now, the main focus of the theoretically predicted TMX3 monolayers has been on the Chern insulator states, which can realize the quantum anomalous Hall effect. Here, using first-principles calculations, we theoretically demonstrate that the stable OsCl3 monolayer has a ferromagnetic ground state and a spin-polarized Dirac point without spin-orbit coupling (SOC), which disappears in the band structure of a Janus OsBr1.5Cl1.5 monolayer. We find that OsCl3 exhibits in-plane magnetization when SOC is included. By manipulating the magnetization direction along the C-2 symmetry axis of the OsCl3 structure, a gapless half-Dirac semimetal state with SOC can be achieved, which is different from the gapped Chern insulator state. Both semimetal states of OsCl3 monolayer without and with SOC exhibit a linear half-Dirac point (twofold degenerate) with high Fermi velocities. The achievement of the 2D semimetal state with SOC is expected to be found in other TMX3 monolayers, and we confirm it in a TiCl3 monolayer. This provides a different perspective to study the band structure with SOC of the 2D TMX3 family.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4
Times cited: 4
DOI: 10.1063/5.0105605
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“Integrated atomistic chemical imaging and reactive force field molecular dynamic simulations on silicon oxidation”. Dumpala S, Broderick SR, Khalilov U, Neyts EC, van Duin ACT, Provine J, Howe RT, Rajan K, Applied physics letters 106, 011602 (2015). http://doi.org/10.1063/1.4905442
Abstract: In this paper, we quantitatively investigate with atom probe tomography, the effect of temperature on the interfacial transition layer suboxide species due to the thermal oxidation of silicon. The chemistry at the interface was measured with atomic scale resolution, and the changes in chemistry and intermixing at the interface were identified on a nanometer scale. We find an increase of suboxide (SiOx) concentration relative to SiO2 and increased oxygen ingress with elevated temperatures. Our experimental findings are in agreement with reactive force field molecular dynamics simulations. This work demonstrates the direct comparison between atom probe derived chemical profiles and atomistic-scale simulations for transitional interfacial layer of suboxides as a function of temperature.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 19
DOI: 10.1063/1.4905442
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“Stable half-metallic monolayers of FeCl2”. Torun E, Sahin H, Singh SK, Peeters FM, Applied physics letters 106, 192404 (2015). http://doi.org/10.1063/1.4921096
Abstract: The structural, electronic, and magnetic properties of single layers of Iron Dichloride (FeCl2) were calculated using first principles calculations. We found that the 1T phase of the single layer FeCl2 is 0.17 eV/unit cell more favorable than its 1H phase. The structural stability is confirmed by phonon calculations. We found that 1T-FeCl2 possess three Raman-active (130, 179, and 237 cm(-1)) and one infrared-active (279 cm(-1)) phonon branches. The electronic band dispersion of the 1T-FeCl2 is calculated using both gradient approximation of Perdew-Burke-Ernzerhof and DFT-HSE06 functionals. Both functionals reveal that the 1T-FeCl2 has a half-metallic ground state with a Curie temperature of 17 K. (C) 2015 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 84
DOI: 10.1063/1.4921096
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“Collapse of the low temperature insulating state in Cr-doped V2O3 thin films”. Homm P, Dillemans L, Menghini M, Van Bilzen B, Bakalov P, Su CY, Lieten R, Houssa M, Nasr Esfahani D, Covaci L, Peeters FM, Seo JW, Locquet JP;, Applied physics letters 107, 111904 (2015). http://doi.org/10.1063/1.4931372
Abstract: We have grown epitaxial Cr-doped V2O3 thin films with Cr concentrations between 0% and 20% on (0001)-Al2O3 by oxygen-assisted molecular beam epitaxy. For the highly doped samples (>3%), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between 1% and 3%), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for doping levels below 3% and increases the room temperature resistivity towards the values of Cr-doped V2O3 single crystals. It is well-know that oxygen excess stabilizes a metallic state in V2O3 single crystals. Hence, we propose that Cr doping promotes oxygen excess in our films during deposition, leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V2O3 films can be interesting candidates for field effect devices. (C) 2015 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 14
DOI: 10.1063/1.4931372
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“Atomic layer epitaxy of Ruddlesden-Popper SrO(SrTiO3)n films by means of metalorganic aerosol deposition”. Jungbauer M, Huehn S, Egoavil R, Tan H, Verbeeck J, Van Tendeloo G, Moshnyaga V, Applied physics letters 105, 251603 (2014). http://doi.org/10.1063/1.4905055
Abstract: We report an atomic layer epitaxial growth of Ruddlesden-Popper (RP) thin films of SrO(SrTiO3)(n) (n = infinity, 2, 3, 4) by means of metalorganic aerosol deposition (MAD). The films are grown on SrTiO3(001) substrates by means of a sequential deposition of Sr-O/Ti-O-2 atomic monolayers, monitored in-situ by optical ellipsometry. X-ray diffraction and transmission electron microscopy (TEM) reveal the RP structure with n = 2-4 in accordance with the growth recipe. RP defects, observed by TEM in a good correlation with the in-situ ellipsometry, mainly result from the excess of SrO. Being maximal at the film/substrate interface, the SrO excess rapidly decreases and saturates after 5-6 repetitions of the SrO(SrTiO3)(4) block at the level of 2.4%. This identifies the SrTiO3 substrate surface as a source of RP defects under oxidizing conditions within MAD. Advantages and limitations of MAD as a solution-based and vacuum-free chemical deposition route were discussed in comparison with molecular beam epitaxy. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 32
DOI: 10.1063/1.4905055
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“Distinct magnetic signatures of fractional vortex configurations in multiband superconductors”. da Silva RM, Milošević, MV, Dominguez D, Peeters FM, Albino Aguiar J, Applied physics letters 105, 232601 (2014). http://doi.org/10.1063/1.4904010
Abstract: Vortices carrying fractions of a flux quantum are predicted to exist in multiband superconductors, where vortex core can split between multiple band-specific components of the superconducting condensate. Using the two-component Ginzburg-Landau model, we examine such vortex configurations in a two-band superconducting slab in parallel magnetic field. The fractional vortices appear due to the band-selective vortex penetration caused by different thresholds for vortex entry within each band-condensate, and stabilize near the edges of the sample. We show that the resulting fractional vortex configurations leave distinct fingerprints in the static measurements of the magnetization, as well as in ac dynamic measurements of the magnetic susceptibility, both of which can be readily used for the detection of these fascinating vortex states in several existing multiband superconductors. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 22
DOI: 10.1063/1.4904010
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“Graphene on boron-nitride : Moiré, pattern in the van der Waals energy”. Neek-Amal M, Peeters FM, Applied physics letters 104, 041909 (2014). http://doi.org/10.1063/1.4863661
Abstract: The spatial dependence of the van der Waals (vdW) energy between graphene and hexagonal boron-nitride (h-BN) is investigated using atomistic simulations. The van der Waals energy between graphene and h-BN shows a hexagonal superlattice structure identical to the observed Moire pattern in the local density of states, which depends on the lattice mismatch and misorientation angle between graphene and h-BN. Our results provide atomistic features of the weak van der Waals interaction between graphene and BN which are in agreement with experiment and provide an analytical expression for the size of the spatial variation of the weak van der Waals interaction. We also found that the A-B-lattice symmetry of graphene is broken along the armchair direction. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 61
DOI: 10.1063/1.4863661
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“Graphene on hexagonal lattice substrate : stress and pseudo-magnetic field”. Neek-Amal M, Peeters FM, Applied physics letters 104, 173106 (2014). http://doi.org/10.1063/1.4873342
Abstract: Moire patterns in the pseudo-magnetic field and in the strain profile of graphene (GE) when put on top of a hexagonal lattice substrate are predicted from elasticity theory. The van der Waals interaction between GE and the substrate induces out-of-plane deformations in graphene which results in a strain field, and consequently in a pseudo-magnetic field. When the misorientation angle is about 0.5 degrees, a three-fold symmetric strain field is realized that results in a pseudo-magnetic field very similar to the one proposed by F. Guinea, M. I. Katsnelson, and A. K. Geim [Nature Phys. 6, 30 (2010)]. Our results show that the periodicity and length of the pseudo-magnetic field can be tuned in GE by changing the misorientation angle and substrate adhesion parameters and a considerable energy gap (23 meV) can be obtained due to out-of-plane deformation of graphene which is in the range of recent experimental measurements (20-30 meV). (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 14
DOI: 10.1063/1.4873342
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“Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : a first principles insight”. Clima S, Wouters DJ, Adelmann C, Schenk T, Schroeder U, Jurczak M, Pourtois G, Applied physics letters 104, 092906 (2014). http://doi.org/10.1063/1.4867975
Abstract: The origin of the ferroelectric polarization switching in orthorhombic HfO2 has been investigated by first principles calculations. The phenomenon can be regarded as being the coordinated displacement of four O ions in the orthorhombic unit cell, which can lead to a saturated polarization as high as 53 mu C/cm(2). We show the correlation between the computed polarization reversal barrier and the experimental coercive fields. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 79
DOI: 10.1063/1.4867975
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“Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic”. Verreck D, Verhulst AS, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G, Applied physics letters 105, 243506 (2014). http://doi.org/10.1063/1.4904712
Abstract: Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In0.53Ga0.47As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 10
DOI: 10.1063/1.4904712
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“The interband optical absorption in silicon quantum wells : application of the 30-band k . p model”. Čukarić, NA, Tadić, MZ, Partoens B, Peeters FM, Applied physics letters 104, 242103 (2014). http://doi.org/10.1063/1.4884122
Abstract: The interband optical absorption in Si/SiO2 quantum wells is calculated as function of the well width (W) and the evolution from an indirect to a direct gap material as function of the well width is investigated. In order to compute the electron states in the conduction band, the 30-band k . p model is employed, whereas the 6-band Luttinger-Kohn model is used for the hole states. We found that the effective direct band gap in the quantum well agrees very well with the W-2 scaling result of the single-band model. The interband matrix elements for linear polarized light oscillate with the quantum well width, which agrees qualitatively with a single band calculation. Our theoretical results indicate that the absorption can be maximized by a proper choice of the well width. However, the obtained absorption coefficients are at least an order of magnitude smaller than for a typical direct semiconductor even for a well width of 2 nm. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 1
DOI: 10.1063/1.4884122
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“Interplay between snake and quantum edge states in a graphene Hall bar with a pn-junction”. Milovanović, SP, Masir MR, Peeters FM, Applied physics letters 105, 123507 (2014). http://doi.org/10.1063/1.4896769
Abstract: The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the Landauer-Büttiker formalism, while the transmission coefficients are obtained using the non-equilibrium Green's function approach. The interplay between transport due to edge channels and snake states is investigated. When two edge channels are occupied, we predict oscillations in the Hall and the bend resistance as function of the magnetic field, which are a consequence of quantum interference between the occupied snake states.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 18
DOI: 10.1063/1.4896769
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“Mechanical and thermal properties of h-MX2 (M = Cr, Mo, W, X = O, S, Se, Te) monolayers : a comparative study”. Çakir D, Peeters FM, Sevik C, Applied physics letters 104, 203110 (2014). http://doi.org/10.1063/1.4879543
Abstract: Using density functional theory, we obtain the mechanical and thermal properties of MX2 monolayers (where M = Cr, Mo, W and X = O, S, Se, Te). The C-centered phonon frequencies (i.e., A(1), A(2)'', E ', and E ''), relative frequency values of A(1), and E ' modes, and mechanical properties (i.e., elastic constants, Young modulus, and Poisson's ratio) display a strong dependence on the type of metal and chalcogenide atoms. In each chalcogenide (metal) group, transition-metal dichalcogenides (TMDCs) with W (O) atom are found to be much stiffer. Consistent with their stability, the thermal expansion of lattice constants for TMDCs with O (Te) is much slower (faster). Furthermore, in a heterostructure of these materials, the difference of the thermal expansion of lattice constants between the individual components becomes quite tiny over the whole temperature range. The calculated mechanical and thermal properties show that TMDCs are promising materials for heterostructures. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 130
DOI: 10.1063/1.4879543
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“Microstructural analysis of 9.7% efficient Cu2ZnSnSe4 thin film solar cells”. Buffière M, Brammertz G, Batuk M, Verbist C, Mangin D, Koble C, Hadermann J, Meuris M, Poortmans J, Applied physics letters 105, 183903 (2014). http://doi.org/10.1063/1.4901401
Abstract: This work presents a detailed analysis of the microstructure and the composition of our record Cu 2ZnSnSe4 (CZTSe)-CdS-ZnO solar cell with a total area efficiency of 9.7%. The average composition of the CZTSe crystallites is Cu 1.94 Zn 1.12Sn0.95Se3.99. Large crystals of ZnSe secondary phase (up to 400 nm diameter) are observed at the voids between the absorber and the back contact, while smaller ZnSe domains are segregated at the grain boundaries and close to the surface of the CZTSe grains. An underlying layer and some particles of Cu xSe are observed at the Mo-MoSe2-Cu2ZnSnSe4 interface. The free surface of the voids at the back interface is covered by an amorphous layer containing Cu, S, O, and C, while the presence of Cd, Na, and K is also observed in this region.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 17
DOI: 10.1063/1.4901401
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“Optimal experimental design for the detection of light atoms from high-resolution scanning transmission electron microscopy images”. Gonnissen J, de Backer A, den Dekker AJ, Martinez GT, Rosenauer A, Sijbers J, Van Aert S, Applied physics letters 105, 063116 (2014). http://doi.org/10.1063/1.4892884
Abstract: We report an innovative method to explore the optimal experimental settings to detect light atoms from scanning transmission electron microscopy (STEM) images. Since light elements play a key role in many technologically important materials, such as lithium-battery devices or hydrogen storage applications, much effort has been made to optimize the STEM technique in order to detect light elements. Therefore, classical performance criteria, such as contrast or signal-to-noise ratio, are often discussed hereby aiming at improvements of the direct visual interpretability. However, when images are interpreted quantitatively, one needs an alternative criterion, which we derive based on statistical detection theory. Using realistic simulations of technologically important materials, we demonstrate the benefits of the proposed method and compare the results with existing approaches.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 3.411
Times cited: 12
DOI: 10.1063/1.4892884
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“Plasticity mechanisms in ultrafine grained freestanding aluminum thin films revealed by in-situ transmission electron microscopy nanomechanical testing”. Idrissi H, Kobler A, Amin-Ahmadi B, Coulombier M, Galceran M, Raskin J-P, Godet S, Kuebel C, Pardoen T, Schryvers D, Applied physics letters 104, 101903 (2014). http://doi.org/10.1063/1.4868124
Abstract: In-situ bright field transmission electron microscopy (TEM) nanomechanical tensile testing and in-situ automated crystallographic orientation mapping in TEM were combined to unravel the elementary mechanisms controlling the plasticity of ultrafine grained Aluminum freestanding thin films. The characterizations demonstrate that deformation proceeds with a transition from grain rotation to intragranular dislocation glide and starvation plasticity mechanism at about 1% deformation. The grain rotation is not affected by the character of the grain boundaries. No grain growth or twinning is detected. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 24
DOI: 10.1063/1.4868124
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“Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene”. Shakouri K, Vasilopoulos P, Vargiamidis V, Hai G-Q, Peeters FM, Applied physics letters 104, 213109 (2014). http://doi.org/10.1063/1.4878509
Abstract: We study the commensurability oscillations in silicene subject to a perpendicular electric field E-z, a weak magnetic field B, and a weak periodic potential V = V-0 cos(Cy); C = 2 pi/a(0) with a(0) its period. The field E-z and/or the modulation lift the spin degeneracy of the Landau levels and lead to spin and valley resolved Weiss oscillations. The spin resolution is maximal when the field E-z is replaced by a periodic one E-z = E-0 cos(Dy); D = 2 pi/b(0), while the valley one is maximal for b(0) = a(0). In certain ranges of B values, the current is fully spin or valley polarized. Additional quantum Hall conductivity plateaux arise due to spin and valley intra-Landau-level transitions. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 16
DOI: 10.1063/1.4878509
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“Can p-channel tunnel field-effect transistors perform as good as n-channel?”.Verhulst AS, Verreck D, Pourghaderi MA, Van de Put M, Sorée B, Groeseneken G, Collaert N, Thean AV-Y, Applied physics letters 105, 043103 (2014). http://doi.org/10.1063/1.4891348
Abstract: We show that bulk semiconductor materials do not allow perfectly complementary p- and n-channel tunnel field-effect transistors (TFETs), due to the presence of a heavy-hole band. When tunneling in p-TFETs is oriented towards the gate-dielectric, field-induced quantum confinement results in a highest-energy subband which is heavy-hole like. In direct-bandgap IIIV materials, the most promising TFET materials, phonon-assisted tunneling to this subband degrades the subthreshold swing and leads to at least 10x smaller on-current than the desired ballistic on-current. This is demonstrated with quantum-mechanical predictions for p-TFETs with tunneling orthogonal to the gate, made out of InP, In0.53Ga0.47As, InAs, and a modified version of In0.53Ga0.47As with an artificially increased conduction-band density-of-states. We further show that even if the phonon-assisted current would be negligible, the build-up of a heavy-hole-based inversion layer prevents efficient ballistic tunneling, especially at low supply voltages. For p-TFET, a strongly confined n-i-p or n-p-i-p configuration is therefore recommended, as well as a tensily strained line-tunneling configuration. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 8
DOI: 10.1063/1.4891348
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“Atomic scale investigation of a PbTiO3/SrRuO3/DyScO3 heterostructure”. Egoavil R, Tan H, Verbeeck J, Bals S, Smith B, Kuiper B, Rijnders G, Koster G, Van Tendeloo G, Applied physics letters 102, 223106 (2013). http://doi.org/10.1063/1.4809597
Abstract: An epitaxial PbTiO3 thin film grown on self-organized crystalline SrRuO3 nanowires deposited on a DyScO3 substrate with ordered DyO and ScO2 chemical terminations is investigated by transmission electron microscopy. In this PbTiO3/SrRuO3/DyScO3 heterostructure, the SrRuO3 nanowires are assumed to grow on only one type of substrate termination. Here, we report on the structure, morphology, and chemical composition analysis of this heterostructure. Electron energy loss spectroscopy reveals the exact termination sequence in this complex structure. The energy loss near-edge structure of the Ti-L-2,L-3, Sc-L-2,L-3, and O K edges shows intrinsic interfacial electronic reconstruction. Furthermore, PbTiO3 domain walls are observed to start at the end of the nanowires resulting in atomic steps on the film surface. (C) 2013 AIP Publishing LLC.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 12
DOI: 10.1063/1.4809597
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