“Tiling silicalite-1 nanoslabs into 3D mosaics”. Kremer SPB, Kirschhock CEA, Aerts A, Villani K, Martens JA, Lebedev OI, Van Tendeloo G, Advanced materials 15, 1705 (2003). http://doi.org/10.1002/adma.200305266
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 82
DOI: 10.1002/adma.200305266
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“Ultrahigh strain hardening in thin palladium films with nanoscale twins”. Idrissi H, Wang B, Colla MS, Raskin JP, Schryvers D, Pardoen T, Advanced materials 23, 2119 (2011). http://doi.org/10.1002/adma.201004160
Abstract: Nanocrystalline Pd thin films containing coherent growth twin boundaries are deformed using on-chip nanomechanical testing. A large work-hardening capacity is measured. The origin of the observed behavior is unraveled using transmission electron microscopy and shows specific dislocations and twin boundaries interactions. The results indicate the potential for large strength and ductility balance enhancement in Pd films, as needed in membranes for H technologies.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 57
DOI: 10.1002/adma.201004160
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“Defect-modulated transistors and gas-enhanced photodetectors on ReS2 nanosheets”. Yang S, Kang J, Yue Q, Coey JMD, Jiang C, Advanced Materials Interfaces 3, 1500707 (2016). http://doi.org/10.1002/admi.201500707
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.279
Times cited: 22
DOI: 10.1002/admi.201500707
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“Iron-titanium oxide nanocomposites functionalized with gold particles : from design to solar hydrogen production”. Barreca D, Carraro G, Gasparotto A, Maccato C, Warwick MEA, Toniato E, Gombac V, Sada C, Turner S, Van Tendeloo G, Fornasiero P;, Advanced Materials Interfaces 3, 1600348 (2016). http://doi.org/10.1002/ADMI.201600348
Abstract: Hematite-titania nanocomposites, eventually functionalized with gold nanoparticles (NPs), are designed and developed by a plasma-assisted strategy, consisting in: (i) the plasma enhanced-chemical vapor deposition of -Fe2O3 on fluorine-doped tin oxide substrates; the radio frequency-sputtering of (ii) TiO2, and (iii) Au in controlled amounts. A detailed chemicophysical characterization, carried out through a multitechnique approach, reveals that the target materials are composed by interwoven -Fe2O3 dendritic structures, possessing a high porosity and active area. TiO2 introduction results in the formation of an ultrathin titania layer uniformly covering Fe2O3, whereas Au sputtering yields a homogeneous dispersion of low-sized gold NPs. Due to the intimate and tailored interaction between the single constituents and their optical properties, the resulting composite materials are successfully exploited for solar-driven applications. In particular, promising photocatalytic performances in H-2 production by reforming of water-ethanol solutions under simulated solar illumination are obtained. The related insights, presented and discussed in this work, can yield useful guidelines to boost the performances of nanostructured photocatalysts for energy-related applications.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.279
Times cited: 15
DOI: 10.1002/ADMI.201600348
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“Epitaxial stress-free growth of high crystallinity ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) substrate”. Li L, Liao Z, Gauquelin N, Minh Duc Nguyen, Hueting RJE, Gravesteijn DJ, Lobato I, Houwman EP, Lazar S, Verbeeck J, Koster G, Rijnders G, Advanced Materials Interfaces 5, 1700921 (2018). http://doi.org/10.1002/ADMI.201700921
Abstract: <script type='text/javascript'>document.write(unpmarked('Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZrxTi1-xO3) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr1-xTix)O-3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr0.52Ti0.48)O-3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.279
Times cited: 15
DOI: 10.1002/ADMI.201700921
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“Homojunction of oxygen and titanium vacancies and its interfacial n-p effect”. Wu S-M, Liu X-L, Lian X-L, Tian G, Janiak C, Zhang Y-X, Lu Y, Yu H-Z, Hu J, Wei H, Zhao H, Chang G-G, Van Tendeloo G, Wang L-Y, Yang X-Y, Su B-L, Advanced materials 30, 1802173 (2018). http://doi.org/10.1002/ADMA.201802173
Abstract: The homojunction of oxygen/metal vacancies and its interfacial n-p effect on the physiochemical properties are rarely reported. Interfacial n-p homojunctions of TiO2 are fabricated by directly decorating interfacial p-type titanium-defected TiO2 around n-type oxygen-defected TiO2 nanocrystals in amorphous-anatase homogeneous nanostructures. Experimental measurements and theoretical calculations on the cell lattice parameters show that the homojunction of oxygen and titanium vacancies changes the charge density of TiO2; a strong EPR signal caused by oxygen vacancies and an unreported strong titanium vacancies signal of 2D H-1 TQ-SQ MAS NMR are present. Amorphous-anatase TiO2 shows significant performance regarding the photogeneration current, photocatalysis, and energy storage, owing to interfacial n-type to p-type conductivity with high charge mobility and less structural confinement of amorphous clusters. A new homojunction of oxygen and titanium vacancies concept, characteristics, and mechanism are proposed at an atomic-/nanoscale to clarify the generation of oxygen vacancies and titanium vacancies as well as the interface electron transfer.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 39
DOI: 10.1002/ADMA.201802173
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“Electrostatic force-driven oxide heteroepitaxy for interface control”. Ren Z, Wu M, Chen X, Li W, Li M, Wang F, Tian H, Chen J, Xie Y, Mai J, Li X, Lu X, Lu Y, Zhang H, Van Tendeloo G, Zhang Z, Han G, Advanced materials 30, 1707017 (2018). http://doi.org/10.1002/ADMA.201707017
Abstract: Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 4
DOI: 10.1002/ADMA.201707017
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“A Facet-Specific Quantum Dot Passivation Strategy for Colloid Management and Efficient Infrared Photovoltaics”. Kim Y, Che F, Jo JW, Choi J, de Arquer FPG, Voznyy O, Sun B, Kim J, Choi M-J, Quintero-Bermudez R, Fan F, Tan CS, Bladt E, Walters G, Proppe AH, Zou C, Yuan H, Bals S, Hofkens J, Roeffaers MBJ, Hoogland S, Sargent EH, Advanced materials 31, 1805580 (2019). http://doi.org/10.1002/ADMA.201805580
Abstract: Colloidal nanocrystals combine size- and facet-dependent properties with solution processing. They offer thus a compelling suite of materials for technological applications. Their size- and facet-tunable features are studied in synthesis; however, to exploit their features in optoelectronic devices, it will be essential to translate control over size and facets from the colloid all the way to the film. Larger-diameter colloidal quantum dots (CQDs) offer the attractive possibility of harvesting infrared (IR) solar energy beyond absorption of silicon photovoltaics. These CQDs exhibit facets (nonpolar (100)) undisplayed in small-diameter CQDs; and the materials chemistry of smaller nanocrystals fails consequently to translate to materials for the short-wavelength IR regime. A new colloidal management strategy targeting the passivation of both (100) and (111) facets is demonstrated using distinct choices of cations and anions. The approach leads to narrow-bandgap CQDs with impressive colloidal stability and photoluminescence quantum yield. Photophysical studies confirm a reduction both in Stokes shift (approximate to 47 meV) and Urbach tail (approximate to 29 meV). This approach provides a approximate to 50% increase in the power conversion efficiency of IR photovoltaics compared to controls, and a approximate to 70% external quantum efficiency at their excitonic peak.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 74
DOI: 10.1002/ADMA.201805580
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“Diluted oxide interfaces with tunable ground states”. Gan Y, Christensen DV, Zhang Y, Zhang H, Krishnan D, Zhong Z, Niu W, Carrad DJ, Norrman K, von Soosten M, Jespersen TS, Shen B, Gauquelin N, Verbeeck J, Sun J, Pryds N, Chen Y, Advanced materials 31, 1805970 (2019). http://doi.org/10.1002/ADMA.201805970
Abstract: The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, an unforeseen tunability of the phase diagram of LAO/STO is reported by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-doping level, x, of LaAl1-xMnxO3/STO (0 <= x <= 1), the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of n(c) = 2.8 x 10(13) cm(-2), where a peak T-SC approximate to 255 mK of superconducting transition temperature is observed. Moreover, the LaAl1-xMnxO3 turns ferromagnetic at x >= 0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only d(xy) electrons and just before it becomes insulating, a same device with both signatures of superconductivity and clear anomalous Hall effect (7.6 x 10(12) cm(-2) < n(s) <= 1.1 x 10(13) cm(-2)) is achieved reproducibly. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 31
DOI: 10.1002/ADMA.201805970
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“Liquid-alloy-assisted growth of 2D ternaryGa2In4S9 toward high-performance UV photodetection”. Wang F, Gao T, Zhang Q, Hu Z-Y, Jin B, Li L, Zhou X, Li H, Van Tendeloo G, Zhai T, Advanced materials 31, 1806306 (2019). http://doi.org/10.1002/ADMA.201806306
Abstract: 2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high-quality 2D ternary Ga2In4S9 flakes of only a few atomic layers thick (approximate to 2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV-light-sensing applications are explored systematically. Photodetectors based on the Ga2In4S9 flakes display outstanding UV detection ability (R-lambda = 111.9 A W-1, external quantum efficiency = 3.85 x 10(4)%, and D* = 2.25 x 10(11) Jones@360 nm) with a fast response speed (tau(ring) approximate to 40 ms and tau(decay) approximate to 50 ms). In addition, Ga2In4S9-based phototransistors exhibit a responsivity of approximate to 10(4) A W-1@360 nm above the critical back-gate bias of approximate to 0 V. The use of the liquid alloy for synthesizing ultrathin 2D Ga2In4S9 nanostructures may offer great opportunities for designing novel 2D optoelectronic materials to achieve optimal device performance.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 29
DOI: 10.1002/ADMA.201806306
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“Enhancing the hydrogen evolution properties of kesterite absorber by Si-doping in the surface of CZTS thin film”. Vishwakarma M, Kumar M, Hendrickx M, Hadermann J, Singh AP, Batra Y, Mehta BR, Advanced Materials Interfaces , 2002124 (2021). http://doi.org/10.1002/ADMI.202002124
Abstract: In this work, the effects of Si-doping in Cu2ZnSnS4 are examined computationally and experimentally. The density functional theory calculations show that an increasing concentration of Si (from x = 0 to x = 1) yields a band gap rise due to shifting of the conduction band minimum towards higher energy states in the Cu2Zn(Sn1-xSix)S-4. CZTSiS thin film prepared by co-sputtering process shows Cu2Zn(Sn1-xSix)S-4 (Si-rich) and Cu2ZnSnS4 (S-rich) kesterite phases on the surface and in the bulk of the sample, respectively. A significant change in surface electronic properties is observed in CZTSiS thin film. Si-doping in CZTS inverts the band bending at grain-boundaries from downward to upward and the Fermi level of CZTSiS shifts upward. Further, the coating of the CdS and ZnO layer improves the photocurrent to approximate to 5.57 mA cm(-2) at -0.41 V-RHE in the CZTSiS/CdS/ZnO sample, which is 2.39 times higher than that of pure CZTS. The flat band potential increases from CZTS approximate to 0.43 V-RHE to CZTSiS/CdS/ZnO approximate to 1.31 V-RHE indicating the faster carrier separation process at the electrode-electrolyte interface in the latter sample. CdS/ZnO layers over CZTSiS significantly reduce the charge transfer resistance at the semiconductor-electrolyte interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.279
DOI: 10.1002/ADMI.202002124
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“In situ atomistic insight into magnetic metal diffusion across Bi0.5Sb1.5Te3 quintuple layers”. Lu W, Cui W, Zhao W, Lin W, Liu C, Van Tendeloo G, Sang X, Zhao W, Zhang Q, Advanced Materials Interfaces , 2102161 (2022). http://doi.org/10.1002/ADMI.202102161
Abstract: Diffusion and occupancy of magnetic atoms in van der Waals (VDW) layered materials have significant impact on applications such as energy storage, thermoelectrics, catalysis, and topological phenomena. However, due to the weak VDW bonding, most research focus on in-plane diffusion within the VDW gap, while out-of-plane diffusion has rarely been reported. Here, to investigate out-of-plane diffusion in VDW-layered Bi2Te3-based alloys, a Ni/Bi0.5Sb1.5Te3 heterointerface is synthesized by depositing magnetic Ni metal on a mechanically exfoliated Bi0.5Sb1.5Te3 (0001) substrate. Diffusion of Ni atoms across the Bi0.5Sb1.5Te3 quintuple layers is directly observed at elevated temperatures using spherical-aberration-corrected scanning transmission electron microscopy (STEM). Density functional theory calculations demonstrate that the diffusion energy barrier of Ni atoms is only 0.31-0.45 eV when they diffuse through Te-3(Bi, Sb)(3) octahedron chains. Atomic-resolution in situ STEM reveals that the distortion of the Te-3(Bi, Sb)(3) octahedron, induced by the Ni occupancy, drives the formation of coherent NiM (M = Bi, Sb, Te) at the heterointerfaces. This work can lead to new strategies to design novel thermoelectric and topological materials by introducing magnetic dopants to VDW-layered materials.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.4
DOI: 10.1002/ADMI.202102161
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“Multimode electron tomography sheds light on synthesis, structure, and properties of complex metal-based nanoparticles”. Jenkinson K, Liz-Marzan LM, Bals S, Advanced materials 34, 2110394 (2022). http://doi.org/10.1002/ADMA.202110394
Abstract: Electron tomography has become a cornerstone technique for the visualization of nanoparticle morphology in three dimensions. However, to obtain in-depth information about a nanoparticle beyond surface faceting and morphology, different electron microscopy signals must be combined. The most notable examples of these combined signals include annular dark-field scanning transmission electron microscopy (ADF-STEM) with different collection angles and the combination of ADF-STEM with energy-dispersive X-ray or electron energy loss spectroscopies. Here, the experimental and computational development of various multimode tomography techniques in connection to the fundamental materials science challenges that multimode tomography has been instrumental to overcoming are summarized. Although the techniques can be applied to a wide variety of compositions, the study is restricted to metal and metal oxide nanoparticles for the sake of simplicity. Current challenges and future directions of multimode tomography are additionally discussed.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 29.4
Times cited: 10
DOI: 10.1002/ADMA.202110394
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“Orbital-hybridization-driven charge density wave transition in CsV₃Sb₅, kagome superconductor”. Han S, Tang CS, Li L, Liu Y, Liu H, Gou J, Wu J, Zhou D, Yang P, Diao C, Ji J, Bao J, Zhang L, Zhao M, Milošević, MV, Guo Y, Tian L, Breese MBH, Cao G, Cai C, Wee ATS, Yin X, Advanced materials , 1 (2022). http://doi.org/10.1002/ADMA.202209010
Abstract: Owing to its inherent non-trivial geometry, the unique structural motif of the recently discovered kagome topological superconductor AV(3)Sb(5) (A = K, Rb, Cs) is an ideal host of diverse topologically non-trivial phenomena, including giant anomalous Hall conductivity, topological charge order, charge density wave (CDW), and unconventional superconductivity. Despite possessing a normal-state CDW order in the form of topological chiral charge order and diverse superconducting gaps structures, it remains unclear how fundamental atomic-level properties and many-body effects including Fermi surface nesting, electron-phonon coupling, and orbital hybridization contribute to these symmetry-breaking phenomena. Here, the direct participation of the V3d-Sb5p orbital hybridization in mediating the CDW phase transition in CsV3Sb5 is reported. The combination of temperature-dependent X-ray absorption and first-principles studies clearly indicates the inverse Star-of-David structure as the preferred reconstruction in the low-temperature CDW phase. The results highlight the critical role that Sb orbitals play and establish orbital hybridization as the direct mediator of the CDW states and structural transition dynamics in kagome unconventional superconductors. This is a significant step toward the fundamental understanding and control of the emerging correlated phases from the kagome lattice through the orbital interactions and provides promising approaches to novel regimes in unconventional orders and topology.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 29.4
Times cited: 1
DOI: 10.1002/ADMA.202209010
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