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Author | Van de Put, M.; Thewissen, M.; Magnus, W.; Sorée, B.; Sellier, J.M. | ||||
Title | Spectral force approach to solve the time-dependent Wigner-Liouville equation | Type | P1 Proceeding | ||
Year | 2014 | Publication | 2014 International Workshop On Computational Electronics (iwce) | Abbreviated Journal | |
Volume | Issue | Pages | |||
Keywords | P1 Proceeding; Condensed Matter Theory (CMT) | ||||
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Publisher | Ieee | Place of Publication | New york | Editor | |
Language | Wos | Publication Date | 0000-00-00 | ||
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Series Volume | Series Issue | Edition | |||
ISSN | 978-1-4799-5433-9 | ISBN | Additional Links | UA library record; WoS full record; | |
Impact Factor | Times cited | Open Access | |||
Notes | Approved | Most recent IF: NA | |||
Call Number | UA @ lucian @ c:irua:122221 | Serial | 3071 | ||
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Author | Beckers, A.; Thewissen, M.; Sorée, B. | ||||
Title | Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors | Type | A1 Journal article | ||
Year | 2018 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 124 | Issue | 14 | Pages | 144304 |
Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
Abstract | This paper investigates energy filtering in silicon nanowires and nanosheets by resonant electron tunneling through a geometric superlattice. A geometric superlattice is any kind of periodic geometric feature along the transport direction of the nanowire or nanosheet. Multivalley quantum-transport simulations are used to demonstrate the manifestation of minibands and minibandgaps in the transmission spectra of such a superlattice. We find that the presence of different valleys in the conduction band of silicon favors a nanowire with a rectangular cross section for effective energy filtering. The obtained energy filter can consequently be used in the source extension of a field-effect transistor to prevent high-energy electrons from contributing to the leakage current. Self-consistent Schrodinger-Poisson simulations in the ballistic limit show minimum subthreshold swings of 6 mV/decade for geometric superlattices with indentations. The obtained theoretical performance metrics for the simulated devices are compared with conventional III-V superlatticeFETs and TunnelFETs. The adaptation of the quantum transmitting boundary method to the finite-element simulation of 3-D structures with anisotropic effective mass is presented in Appendixes A and B. Our results bare relevance in the search for steep-slope transistor alternatives which are compatible with the silicon industry and can overcome the power-consumption bottleneck inherent to standard CMOS technologies. Published by AIP Publishing. | ||||
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Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000447148100011 | Publication Date | 2018-10-11 | |
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Series Volume | Series Issue | Edition | |||
ISSN | 0021-8979; 1089-7550 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 3 | Open Access | |
Notes | ; ; | Approved | Most recent IF: 2.068 | ||
Call Number | UA @ lucian @ c:irua:154729UA @ admin @ c:irua:154729 | Serial | 5099 | ||
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