Abstract: YBa2Cu3O7-x artificial grain boundary Josephson junctions have been fabricated, employing a recently implemented biepitaxial technique. The grain boundaries can be obtained by controlling the orientation of the MgO seed layer and are characterized by a misalignment of the c-axes (45 degrees a-axis tilt or 45 degrees a-axis twist). These types of grain boundaries are still mostly unexplored. We carried out a complete characterization of their transport properties and microstructure. Junctions and de SQUIDs associated with these grain boundaries exhibit an excellent Josephson phenomenology and high values of the ICRN product and of the magnetic flux-to-voltage transfer parameter respectively. Remarkable differences in the transport parameters of tilt and twist junctions have been observed, which can be of interest for several applications. A maximum speed of Josephson vortices as calculated from the voltage step values of the order of 2 x 10(6) m s(-1) is obtained. These devices could also have some impact on experiments designed to study the symmetry of the order parameter, exploiting their microstructure and anisotropic properties. High-resolution electron microscopy showed the presence of perfect basal plane faced boundaries in the cross sections of tilt boundaries.

Abstract: We have investigated epitaxially grown single-crystalline Ca-doped LaMnO3 thin films using the pulsed laser deposition technique in a case study aimed to explore the possibilities buried in epitaxial stress tailoring in order to control the transport properties of CMR materials beyond the limits set by equilibrium thermodynamics. Depending on the film thickness there is an abrupt transition from pseudomorphic to epitaxial granular growth observable which is related to the epitaxial strain of the films. This is associated with microscopic stress relaxation and leads to well controllable modifications of the atomic arrangements of the Mn-O sublattice in the films. Due to the interrelation of double exchange, spin-, charge- and orbital ordering and the Jahn-Teller effect mediated coupling of the electronic system to the crystal lattice, the magnetotransport properties of the firms can be modified in a controllable way.

Abstract: Thr structural, electronic, and magnetic properties of the highly mismatched perovskite oxides, Th(0.35)A(0.65)MnO(3), where Ais for the alkaline earth divalent cations (Ca, Ba, Sr), which are all characterized by the same large tolerance factor (t=0.934), have been investigated by using electron microscopy, electrical resistivity, magnetic susceptibility, and magnetization. It is clearly established that a transition from ferromagnetic metallic towards spin-glass insulator samples is induced as the A-site cationic size mismatch is increased. Moreover, the magnetoresistance (MR) properties of these manganites are strongly reduced for the spin-glass insulators, demonstrating that the A-sire cationic disorder is detrimental for the colossal MR properties. Based on these results, a new electronic and magnetic diagram is established that shows that the A-site disorder, rather than the A-site average cationic size (or t) is the relevant factor for generating spin-glass insulating manganites. [S0163-1829(99)01746-4].

Abstract: The sensitivity and applicability of the synchrotron radiation induced X-ray microfluorescence (mu-SRXRF) spectrometer at the Hamburg synchrotron laboratory Hasylab for the determination of the distribution of trace concentrations of rare-earth elements (REE) in fossilized bone are discussed and critically compared to those of other trace analytical methods such as instrumental neutron activation analysis (INAA) and LAMP-ICPMS (laser ablation microprobe inductively-coupled plasma mass spectrometry). Measurements were carried out on two bone samples from contrasting terrestrial depositional environments at Olduvai Gorge (Tanzania). Results indicate that the microdistribution of the REE in these biological materials is not homogeneous and that the relative abundance of these elements can provide information on the palaeoenvironment during the fossilization process. The heterogeneous distribution of the REE can be determined in a quantitative and completely non-destructive manner provided the concentrations of individual REE are above 10 mu g/g.

Abstract: The microstructure and phase transitions in the perovskite-based ferroelectric lead scandium tantalate, Pb(Sc0.5Ta0.5)O-3 have been investigated by transmission electron microscopy. The effects of ordering of Sc and Ta cations are apparent in reciprocal space as well as in direct space images. High-resolution observations allow direct structure imaging of the domain structure. The structure of the low temperature ferroelectric phase is studied by selected area electron diffraction (SAED) and electron microdiffraction. The relaxer behaviour of this paraelectric-ferroelectric transition is displayed by diffuse intensities in the SAED patterns at temperatures around the Curie point.

Abstract: Nanocrystalline titanium dioxide was prepared via aerosol pyrolysis of titanium alkoxide precursor at 200-580 degrees C in air and in nitrogen atmospheres. Powders were characterized by x-ray diffraction, thermogravimetric analysis, Brunauer-Emmett-Teller analysis, scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, x-ray fluorescence, Raman and infrared spectroscopy, and Berner-type low-pressure impactor. The anatase phase transition was initiated at 500 degrees C in nitrogen and at 580 degrees C in air. Under other conditions amorphous powders were observed and transformed to nanocrystalline TiO2 via thermal postannealing. In air, smooth and spherical particles with 2-4-mu m diameter were formed with an as-expected tendency to convert to rutile in the thermal postannealings. In nitrogen, a fraction of the titanium tetrabutoxide precursor evaporated and formed ultrafine particles via the gas-to-particle conversion. At 500 degrees C thermally stable anatase phase was formed in nitrogen. A specific surface area as high as 280 m(2) g(-1) was observed for an as-prepared powder.

Abstract: In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.

Abstract: Homogenized Ni39.6Mn47.5T12.9 material was investigated by different electron microscopy techniques. Apart from the martensite precursor distortions typical for B2 phase alloys undergoing a thermoelastic martensitic transformation upon cooling, coherent dodecahedron-shaped precipitates with sizes between 20 and 100 nm and faceted by lozenge shapes of {110}-type planes are observed. Selected-area and microdiffraction patterns reveal an overall unit cell with a size of 3 x 3 x 3 units of the bcc lattice of the matrix and a body-centred symmetry without screw axes. Finally a ternary gamma-brass-type atomic structure of space group 14(3) over bar m is suggested for these precipitates in accordance with the obtained symmetry constraints, the energy-dispersive X-ray measurements and high-resolution transmission electron microscopy images. This is the first time this type of structure is found in an alloy completely consisting of transition-metal elements.

Abstract: Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 10(18) cm(-3). We show that such a behavior can be theoretically reproduced by assuming that the columnar structure i.e. the dislocation microstructure is responsible for internal electronic barriers. (C) 1999 Elsevier Science B.V. All rights reserved.

Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.

Abstract: A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].