Number of records found: 3074
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Geometry and electronic structure of porphyrines and porphyrazines”. Lamoen D, Parrinello M, Chemical Physics Letters 248, 309 (1996)
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Giant Pd clusters observed by HREM”. Volkov VV, Van Tendeloo G, Vargaftik MN, Stolygarov IP, Moiseev II, Mendeleev communications , 187 (1993)
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Gold particles supported on TiO2”. Giorgio S, Henry CR, Pauwels B, Van Tendeloo G, , 369 (2000)
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GP-zones in Al-Zn-Mg alloys and their role in artificial aging”. Berg LK, Gjønnes J, Hansen V, Li XZ, Knutson-Wedel M, Waterloo G, Schryvers D, Wallenberg LR, Acta materialia 49, 3443 (2001). http://doi.org/10.1016/S1359-6454(01)00251-8
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Gradient expansion and beyond for stress tensor and tangential pressure deficit through a planar liquid-vapour interface”. Lamoen D, March NH, Physics And Chemistry Of Liquids 38, 495 (2000). http://doi.org/10.1080/00319100008030296
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Grain growth and precipitation in an annealed cold-rolled Ni50.2Ti49.8 alloy”. Srivastava AK, Schryvers D, van Humbeeck J, Intermetallics 15, 1538 (2007). http://doi.org/10.1016/j.intermet.2007.06.003
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Granular films assembled of CoN, CrM and mixtures of CoN and CrM clusters: structure and electron transport properties”. Kuhn LT, Vanhoutte F, Cannaerts M, Neukermans S, Verschoren G, Bouwen W, van Haesendonck C, Lievens P, Silverans RE, Pauwels B, Van Tendeloo G, (2000)
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Graphene textures: tubules and whiskers related to fullerene crystallography”. Van Tendeloo G, Amelinckx S, van Landuyt J, Acta crystallographica: section A: foundations of crystallography 49, 355 (1993)
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Growth and characterization of a-axis textured ZnO thin films”. Nistor LC, Ghica C, Matei D, Dinescu G, Dinescu M, Van Tendeloo G, Journal of crystal growth 277, 26 (2005). http://doi.org/10.1016/j.jcrysgro.2004.12.162
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Growth kinetic of MgO film on r-plane of sapphire: microstructural study”. Lei CH, Van Tendeloo G, Lisoni JG, Siegert M, Schubert J, Journal of crystal growth 226, 419 (2001). http://doi.org/10.1016/S0022-0248(01)01396-3
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Growth mode and electronic-structure of the epitaxial C60(111)/GeS(001) interface”. Gensterblum G, Hevesi K, Han BY, Yu LM, Pireaux JJ, Thiry PA, Caudano R, Lucas AA, Bernaerts D, Amelinckx S, Van Tendeloo G, Bendele G, Buslaps T, Johnson RL, Foss M, Feidenhans’l R, Le Lay G;, Physical review : B : condensed matter and materials physics 50, 11981 (1994). http://doi.org/10.1103/PhysRevB.50.11981
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Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction”. Frangis N, van Landuyt J, Kaltsas G, Travlos A, Nassiopoulos AG, Journal of crystal growth 172, 175 (1997)
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Growth of La2Mo2O9 films on porous Al2O3 substrates by radio frequency magnetron sputtering”. Laffez P, Chen XY, Banerjee G, Pezeril T, Rossell MD, Van Tendeloo G, Lacorre P, Liu JM, Liu Z-G, Thin solid films : an international journal on the science and technology of thin and thick films 500, 27 (2006). http://doi.org/10.1016/j.tsf.2005.10.062
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The growth of Ni5Al3 in L10 martensite studied by in situ transmission electron microscopy and high resolution electron microscopy”. Schryvers D, Ma Y, Journal of alloys and compounds 221, 227 (1995). http://doi.org/10.1016/0925-8388(94)01467-1
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Amelinckx S, van Dyck D, van Landuyt J, Van Tendeloo G (1997) Handbook of microscopy: applications in materials science, solid-state physics and chemistry. Vch, Weinheim
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“Harmless&rdquo, carbon tubes around “dangerous&rdquo, asbestos fibres”. Zhang XF, Zhang XB, Van Tendeloo G, Meijer G, Carbon 32, 363 (1994). http://doi.org/10.1016/0008-6223(94)90206-2
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High crystalline quality erbium silicide films on (100) silicon grown in high vacuum”. Kaltsas G, Travlos A, Nassiopoulos AG, Frangis N, van Landuyt J, Applied surface science 102, 151 (1996). http://doi.org/10.1016/0169-4332(96)00036-0
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High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers”. Germain M, Leys M, Boeykens S, Degroote S, Wang W, Schreurs D, Ruythooren W, Choi K-H, van Daele B, Van Tendeloo G, Borghs G, Materials Research Society symposium proceedings 798, Y10.22 (2004)
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High precision determination of the elastic strain of InGaN/GaN multiple quantum wells”. Wu MF, Zhou S, Yao S, Zhao Q, Vantomme A, van Daele B, Piscopiello E, Van Tendeloo G, Tong YZ, Yang ZJ, Yu TJ, Zhang GY, Journal of vacuum science and technology: B: microelectronics and nanometer structures 22, 920 (2004). http://doi.org/10.1116/1.1715085
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High pressure limiting forms of the zero-temperature equations of state of Ta and Pu from relativistic Thomas-Fermi theory”. Leys FE, March NH, Lamoen D, Physical Review B 67, 064109 (2003). http://doi.org/10.1103/PhysRevB.67.064109
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High pulse area undamping of Rabi oscillations in quantum dots coupled to phonons”. Vagov A, Croitoru MD, Axt VM, Kuhn T, Peeters FM, Physica status solidi B –, Basic solid state physics 243, 2233 (2006). http://doi.org/10.1002/pssb.200668029
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High resolution electron microscopic study of Ba7Sc6Al2O19 and related phases”. Shpanchenko RV, Nistor L, Van Tendeloo G, Amelinckx S, Antipov EV, Kovba LM, Journal of solid state chemistry 113, 193 (1994). http://doi.org/10.1006/jssc.1994.1359
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High-resolution electron microscopy and electron energy-loss spectroscopy of giant palladium clusters”. Oleshko V, Volkov V, Gijbels R, Jacob W, Vargaftik M, Moiseev I, Van Tendeloo G, Zeitschrift für Physik : D : atoms, molecules and clusters 34, 283 (1995). http://doi.org/10.1007/BF01437574
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High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis”. Nistor L, Nistor SV, Dincã, G, van Landuyt J, Schoemaker D, Copaciu V, Georgeoni P, Arnici N, Diamonds an related materials 8, 738 (1999). http://doi.org/10.1016/S0925-9635(98)00282-9
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High-resolution electron microscopy and electron tomography: resolution versus precision”. Van Aert S, den Dekker AJ, van Dyck D, van den Bos A, Journal of structural biology 138, 21 (2002). http://doi.org/10.1016/S1047-8477(02)00016-3
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High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing”. Frangis N, van Landuyt J, Lartiprete R, Martelli S, Borsella E, Chiussi S, Castro J, Leon B, Applied physics letters 72, 2877 (1998). http://doi.org/10.1063/1.121487
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High resolution electron microscopy for materials”. van Landuyt J Eurem 92, Granada, page 23 (1992).
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High-resolution electron microscopy for semiconducting materials science”. van Landuyt J, Vanhellemont J Elsevier, Amsterdam, page 1109 (1994).
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High-resolution electron microscopy : from imaging toward measuring”. Van Aert S, den Dekker AJ, van den Bos A, van Dyck D, IEEE transactions on instrumentation and measurement 51, 611 (2002). http://doi.org/10.1109/TIM.2002.802250
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High resolution electron microscopy in materials research”. Van Tendeloo G, Journal of materials chemistry 8, 797 (1998). http://doi.org/10.1039/a708240a
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