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	Author	Charlier, E.; Gijbels, R.; Van Doorselaer, M.; De Keyzer, R.
	Title	Functioning of thiocyanate ions during sulphur and sulphur-plus-gold Sensitization			Type	P1 Proceeding
	Year	2000	Publication		Abbreviated Journal
	Volume		Issue		Pages	172-176
	Keywords	P1 Proceeding; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	Not much about the effect of thiocyanate addition on the sulphur ripening is known, although it is used for many applications in photographic practice. Via a combination of tracer analysis and diffuse reflectance spectroscopy the effect of thiocyanate addition on the sulphur and sulphur-plus-gold ripening could be unveiled. When thiocyanate is added prior to the sulphur addition, it appears to rearrange the silver halide surface in such way that the sulphur deposition rate is enhanced, but the supply of interstitials is limited. Addition of thiocyanate after the sulphur reaction results in the formation of thiocyanate complexes with silver, from which a silver ion is more easily deposited in a surface cell of the silver sulphide clusters thus enhancing the sensitization rate. For sulphur-plus-gold sensitized emulsions it was observed that part of the gold ions could be removed out of the Ag2-xAuxS clusters by addition of thiocyanate ions and subsequent washing. Hence, it was concluded that two different types of gold ions are present in the silver sulphide clusters; 1. gold ions which are substitutional for silver (bound between sulphur and bromide ions) 2. gold ions which bridge two or three sulphur atoms. Incorporation of gold ions into silver sulphide clusters suppresses their optical absorption in diffuse reflectance spectroscopy. Since the optical absorption at 505 nm can completely be restored by addition of thiocyanate, it is assumed that the entity absorbing at this wavelength is a monomer of silver sulphide.
	Address
	Corporate Author				Thesis
	Publisher	Soc. imaging science technology	Place of Publication	Springfield	Editor
	Language		Wos	000183315900047	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-89208-229-1	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95775			Serial	1307
Permanent link to this record



	Author	Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J.
	Title	Structural characterization of Nb-TiO₂ nanosized thick-films for gas sensing application			Type	P1 Proceeding
	Year	2000	Publication	Sensors and actuators : B : chemical	Abbreviated Journal	Sensor Actuat B-Chem
	Volume	68	Issue	1-3	Pages	140-145
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT); Vision lab
	Abstract	Pure and Nb-doped TiO2 thick-films were prepared by screen-printing, starting from nanosized powders. Grain growth and crystalline phase modification occurred as consequence of firing at high temperature. It has been shown that niobium addition inhibits grain coarsening and hinders anatase-to-rutile phase transition. These semiconducting films exhibited n-type behavior, while Nb acted as donor-dopant. Gas measurements demonstrated that the films are suitable for CO or NO2 sensing. Microstructural characterization by electron microscopy and differential thermal analysis (DTA) highlights the dependence of gas-sensing behavior on film's properties. (C) 2000 Elsevier Science S.A. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Lausanne	Editor
	Language		Wos	000089218000022	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0925-4005;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	5.401	Times cited	51	Open Access
	Notes				Approved	Most recent IF: 5.401; 2000 IF: 1.470
	Call Number	UA @ lucian @ c:irua:95167			Serial	3223
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	Author	Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al.
	Title	Comparative study of structural properties and photoluminescence in InGaN layers with a high In content			Type	A1 Journal article
	Year	2000	Publication	Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS	Abbreviated Journal	Mrs Internet J N S R
	Volume	5	Issue	s:[1]	Pages	art. no.-W11.38
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
	Address
	Corporate Author				Thesis
	Publisher	Materials research society	Place of Publication	Warrendale	Editor
	Language		Wos	000090103600097	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1092-5783	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:103471			Serial	423
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	Author	Kaganovich, I.; Misina, M.; Berezhnoi, S.; Gijbels, R.
	Title	Electron Boltzmann kinetic equation averaged over fast electron bouncing and pitch-angle scattering for fast modeling of electron cyclotron resonance discharge			Type	A1 Journal article
	Year	2000	Publication	Physical review : E : statistical, nonlinear, and soft matter physics	Abbreviated Journal	Phys Rev E
	Volume	61	Issue	2	Pages	1875-1889
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	The electron distribution function (EDF) in an electron cyclotron resonance (ECR) discharge is far from Maxwellian. The self-consistent simulation of ECR discharges requires a calculation of the EDF on every magnetic line for various ion density profiles. The straightforward self-consistent simulation of ECR discharges using the Monte Carlo technique for the EDF calculation is very computer time expensive, since the electron and ion time scales are very different. An electron Boltzmann kinetic equation averaged over the fast electron bouncing and pitch-angle scattering was derived in order to develop an effective and operative tool for the fast modeling (FM) of low-pressure ECR discharges. An analytical solution for the EDF in a loss cone was derived. To check the validity of the FM, one-dimensional (in coordinate) and two-dimensional (in velocity) Monte Carlo simulation codes were developed. The validity of the fast modeling method is proved by comparison with the Monte Carlo simulations. The complete system of equations for FM is presented and ready for use in a comprehensive study of ECR discharges. The variations of plasma density and of wall and sheath potentials are analyzed by solving a self-consistent set of equations for the EDF.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	Woodbury (NY)	Editor
	Language		Wos	000085410600117	Publication Date	2002-07-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-651X;1095-3787;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.366	Times cited	31	Open Access
	Notes				Approved	Most recent IF: 2.366; 2000 IF: 2.142
	Call Number	UA @ lucian @ c:irua:34069			Serial	910
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	Author	Hervieu, M.; Martin, C.; Maignan, A.; Van Tendeloo, G.; Jirak, Z.; Hejtmanek, J.; Barnabe, A.; Thopart, D.; Raveau, B.
	Title	Structural and magnetotransport transitions in the electron-doped Pr_1-xSr_xMnO₃(0.85\leq x\leq1) manganites			Type	A1 Journal article
	Year	2000	Publication	Chemistry and materials	Abbreviated Journal	Chem Mater
	Volume	12	Issue	5	Pages	1456-1462
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The exploration of the Mn4+-rich side of the Pr1-xSrxMnO3 system has allowed the extension of the domain of the cubic perovskite, by using a two-step process, combining synthesis under Ar flow at high temperature and O-2 pressure annealing at lower temperature. We show that these Pr-doped cubic perovskites exhibit a coupled structural (cubic-tetragonal) and magnetic (para-antiferro) transition connected with a resistivity jump at the same temperature. The strong interplay between lattice, charges, and spins for these oxides results from the appearance at low temperature of the distorted C-type antiferromagnetic structure. The Pr1-xSrxMnO3 magnetic phase diagram shows, for 0.9 less than or equal to x less than or equal to 1 (i.e., on the Mn4+-rich side), the existence at low temperature of C- and G-type antiferromagnetism. The absence of ferromagnetic-antiferromagnetic competition explains that magnetoresistante properties are not observed in this system, in contrast to Mn4+-rich Ln(1-x)Ca(x)MnO(3) systems.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Washington, D.C.	Editor
	Language		Wos	000087136800039	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0897-4756;1520-5002;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	9.466	Times cited	24	Open Access
	Notes				Approved	Most recent IF: 9.466; 2000 IF: 3.580
	Call Number	UA @ lucian @ c:irua:103454			Serial	3198
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	Author	Callebaut, D.K.; Makarovska, Y.; Tlatov
	Title	Gravitational energy of solar oscillations and climatic changes			Type	P1 Proceeding
	Year	2000	Publication		Abbreviated Journal
	Volume	463	Issue		Pages	297-300 T2 - 1st Solar and Space Weather Euroconfe
	Keywords	P1 Proceeding; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
	Abstract	The gravitational energy associated with variations in the radius of the Sun is huge: with a relative change of 1/2000 (the estimated difference between maximum and minimum solar activity) and taking only the convection zone to expand, corresponds to about 2 10(34)J, which is 1/10 of the total rotational energy of the Sun. Non-radial oscillations with a tiny nonlinearity can still yield energies comparable to or larger than the total magnetic energy of a full sunspot cycle or three or four orders more than the luminosity of the Sun, but that is not sufficient to account for the changes of the temperature on Earth. The expansion of the upper layers of the convection zone, however, may directly or indirectly affect the climate and the biological aspects on the Earth. Moreover this suits a qualitative explanation why the Sun expands during a minimum of the magnetic activity.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000168300800040	Publication Date
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	92-9092-693-7	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ admin @ c:irua:95767			Serial	8006
Permanent link to this record



	Author	Colomer, J.F.; Stephan, C.; Lefrant, S.; Van Tendeloo, G.; Willems, I.; Konya, Z.; Fonseca, A.; Laurent, C.; Nagy, J.B.
	Title	Large-scale synthesis of single-wall carbon nanotubes by catalytic chemical vapor deposition (CCVD) method			Type	A1 Journal article
	Year	2000	Publication	Chemical physics letters	Abbreviated Journal	Chem Phys Lett
	Volume	317	Issue	1-2	Pages	83-89
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The large-scale production of single-wall carbon nanotubes (SWNTs) is reported. Large quantities of SWNTs can be synthesised by catalytic decomposition of methane over well-dispersed metal particles supported on MgO at 1000 degrees C. The thus produced SWNTs can be separated easily from the support by a simple acidic treatment to obtain a product with high yields (70-80%) of SWNTs. Because the typical synthesis time is 10 min, 1 g of SWNTs can be synthesised per day by this method. The SWNTs are characterized by high-resolution transmission electron microscopy and by Raman spectroscopy, showing the quality and the quantity of products. (C) 2000 Elsevier Science B.V. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000085128300015	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0009-2614;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.815	Times cited	344	Open Access
	Notes				Approved	Most recent IF: 1.815; 2000 IF: 2.364
	Call Number	UA @ lucian @ c:irua:103957			Serial	1782
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	Author	Schweigert, I.V.; Schweigert, V.A.; Peeters, F.M.
	Title	Influence of the lattice symmetry on melting of the bilayer Wigner crystal			Type	A1 Journal article
	Year	2000	Publication	Journal de physique: 4 T2 – International Conference on Strongly Coupled Coulomb Systems, SEP 04-10, 1999, ST MALO, FRANCE	Abbreviated Journal	J Phys Iv
	Volume	10	Issue	P5	Pages	117-120
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract	The melting transition of the five different lattices of a bilayer crystal is studied using the Monte-Carlo (MC) technique. We found the surprising result that the square lattice has a substantial larger melting temperature as compared to the other lattice structures, which is a consequence of the specific topology of the temperature induced defects. A new melting criterion is formulated which we show to be universal for bilayers as well as for single layer crystals.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Les Ulis	Editor
	Language		Wos	000087026300016	Publication Date	2007-07-03
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1155-4339;	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:103954			Serial	1647
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	Author	Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H.
	Title	Microstructural characterization of diamond films deposited on c-BN crystals			Type	A1 Journal article
	Year	2000	Publication	Diamond and related materials T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC	Abbreviated Journal	Diam Relat Mater
	Volume	9	Issue	3-6	Pages	269-273
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000087382400009	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0925-9635;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.561	Times cited	9	Open Access
	Notes				Approved	Most recent IF: 2.561; 2000 IF: 1.591
	Call Number	UA @ lucian @ c:irua:102877			Serial	2041
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	Author	Van Grieken, R.; Jaenicke, R.; Koutsenogii, K.P.; Khodzher, T.V.; Kulipanov, G.N.
	Title	Atmospheric aerosols in the Asian part of the former Soviet Union			Type	P1 Proceeding
	Year	2000	Publication	AIP conference proceedings T2 – 15th International Conference on Nucleation and Atmospheric Aerosols, (ICNAA), August 06-11, 2000, Univ. Missouri Rolla, Rolla, MO	Abbreviated Journal
	Volume	534	Issue		Pages	740-743
	Keywords	P1 Proceeding; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
	Abstract	The paper presents the results of the study of atmospheric aerosols in the Siberian region. This research was focused on studying the chemical and biological characteristics of both natural and pollution aerosols in this vast territory of the Asian part of the former Soviet Union (FSU). The data received within the frame of this project formed the basis for the evaluation of the impact of these aerosols on the Arctic region and the global climate. The Asian part of FSU is of scientific interest in the context of environmental chemistry, air pollution and study of atmospheric aerosols, The specific relevance of aerosol research in Siberia is as follows. There are areas that are very remote from industrial or densely populated centres, In these circumstances, aerosol characterization contributes to the definition of global continental “background”) or “baseline” aerosol, i.e, the aerosol which should occur in natural circumstances and on which all pollution is superimposed. Recently, in the context of global and long-term climatic changes, baseline aerosols and long-range transport of particulate air pollutants have become a topic of much debate, This is because it has been thought that aerosols might compensate for the well-known greenhouse effect to a significant. In this context, more and more attention is being paid to long-range effects of continental aerosols on the polar regions. Research in Norway and Alaska showed that Western or Central Siberia may be a very important source of pollutants affecting the air composition in the Arctic region. Cities and regions in south Siberia are enormously polluted by heavy metals, the level of pollution being many times higher than in the Western world, thus the health of local population is seriously affected. In most cases, gigantic point sources are in the area, which is simple from the viewpoint of environmental chemistry and unambiguous results should be obtained easily. Atmospheric deposition is a possible cause of the existence of heavy metals in the southern part of Lake Baikal. in the northern part of the lake, the environment is unpolluted. However in the southern part of the lake is considerably threatened by pollution from Baikalsk wood-pulp mill and industrial enterprises of Irkutsk, Angarsk,
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000089526000168	Publication Date
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1-56396-958-0	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ admin @ c:irua:95766			Serial	7516
Permanent link to this record



	Author	Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L.
	Title	Interaction of a Ti-capped Co thin film with Si₃N₄			Type	A1 Journal article
	Year	2000	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	77	Issue	26	Pages	4307-4309
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7].
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000166120500021	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 3.411; 2000 IF: 3.906
	Call Number	UA @ lucian @ c:irua:104225			Serial	1683
Permanent link to this record



	Author	Schuddinck, W.; Van Tendeloo, G.; Barnabé, A.; Hervieu, M.; Raveau, B.
	Title	Relation between structure, charge ordering and magnetotransport properties in Nd_0.5Ca_0.5Mn_1-xCr_xO₃ manganites			Type	A1 Journal article
	Year	2000	Publication	Journal of magnetism and magnetic materials T2 – Symposium G Material Physics Issues and Applications of Magnetic Oxides, at the E-MRS Spring Meeting, JUN 01-04, 1999, Strasbourg, France	Abbreviated Journal	J Magn Magn Mater
	Volume	211	Issue	1-3	Pages	105-110
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The relationships between incommensurability, charge ordering and magnetotransport properties in Nd0.5Ca0.5Mn1-xCrxO3 manganites have been studied by electron diffraction and lattice imaging versus temperature with 0.02 less than or equal to x less than or equal to 0.07. All compositions show an incommensurate superstructure over the whole temperature domain, despite the fact that they are ferromagnetic and conductive below 140 K, The q-vector (1/2 – delta)a* decreases with increasing temperature for all compositions x. For a given temperature q also decreases with x. Lattice images obtained at low temperature give a clear view of the characteristics of the incommensurate structure. They also provide a better understanding of the charge ordering process. The low-temperature form of the Cr-doped manganites is not a perfectly doubled cell [[2a(p)root 2 x 2a(p) x a(p)root 2]], but defects inducing a tripled cell occur pseudo-periodically. (C) 2000 Elsevier Science B.V. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000085772100017	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0304-8853;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.63	Times cited	16	Open Access
	Notes				Approved	Most recent IF: 2.63; 2000 IF: 0.996
	Call Number	UA @ lucian @ c:irua:104256			Serial	2858
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	Author	Baelus, B.J.; Peeters, F.M.; Schweigert, V.A.
	Title	Vortex states in superconducting rings			Type	A1 Journal article
	Year	2000	Publication	Physical review : B : condensed matter and materials physics	Abbreviated Journal	Phys Rev B
	Volume	61	Issue	14	Pages	9734-9747
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract	The superconducting state. of a thin superconducting disk with a hole is studied within the, nonlinear Ginzburg-Landau theory in which the demagnetization effect is accurately taken into account. We find that the flux through the hole is not quantized, the superconducting state is stabilized with increasing size of the hole for fixed radius of the disk, and a transition to a multivortex state is found if the disk is sufficiently large. Breaking the circular symmetry through a non-central-location of the hole in the disk favors the multivortex state.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Lancaster, Pa	Editor
	Language		Wos	000086441800074	Publication Date	2002-07-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829;1095-3795;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.836	Times cited	78	Open Access
	Notes				Approved	Most recent IF: 3.836; 2000 IF: NA
	Call Number	UA @ lucian @ c:irua:28514			Serial	3892
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	Author	Dluzewski, P.; Pietraszko, A.; Kozlowski, M.; Szczepanska, A.; Gorecka, J.; Baran, M.; Leonyuk, L.; Babonas, G.J.; Lebedev, O.I.; Szymczak, R.
	Title	Electron microscopy and X-ray structural investigations of incommensurate spin-ladder Sr_4.1Ca_4.7Bi_0.3Cu₁₇O₂₉ single crystals			Type	A1 Journal article
	Year	2000	Publication	Acta physica Polonica: A: general physics, solid state physics, applied physics	Abbreviated Journal	Acta Phys Pol A
	Volume	98	Issue	6	Pages	729-737
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Transmission electron microscopy and X-ray diffraction proved chain/ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3 degrees around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Warszawa	Editor
	Language		Wos	000166377600007	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0587-4246	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor	0.469	Times cited		Open Access
	Notes				Approved	Most recent IF: 0.469; 2000 IF: 0.409
	Call Number	UA @ lucian @ c:irua:104226			Serial	951
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	Author	Razavi, F.S.; Gross, G.; Habermeier, H.-U.; Lebedev, O.; Amelinckx, S.; Van Tendeloo, G.; Vigliante, A.
	Title	Epitaxial strain induced metal insulator transition in La_0.9Sr_0.1MnO₃ and La_0.88Sr_0.1MnO₃ thin films			Type	A1 Journal article
	Year	2000	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	76	Issue	2	Pages	155-157
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	We are reporting an unexpected metal insulator transition at the ferromagnetic phase-transition temperature for thin films of La0.9Sr0.1MnO3 (< 50 nm), grown on a (100) face of SrTiO3 substrate. For the thicker films (> 50 nm), similar to the single crystal, no such transition is observed below T-C. Additionally, we observe the suppression of the features associated with charge or orbital ordering in intentionally La-deficient thin films of La0.88Sr0.1MnO3 (< 75 nm). In thin films, transmission electron microscopy reveals a compressive strain due to the epitaxial growth, that is, lattice parameters adopt those of the cubic lattice of SrTiO3. As the film thickness increases, coherent microtwinning is observed in the films and the films relax to a orthorhombic structure. (C) 2000 American Institute of Physics. [S0003-6951(00)00402-2].
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000084541000009	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	91	Open Access
	Notes				Approved	Most recent IF: 3.411; 2000 IF: 3.906
	Call Number	UA @ lucian @ c:irua:99441			Serial	1073
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	Author	Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C.
	Title	In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si_1-xGe_x/(001)Si structures			Type	A1 Journal article
	Year	2000	Publication	Physical review : B : condensed matter and materials physics	Abbreviated Journal	Phys Rev B
	Volume	61	Issue	15	Pages	10336-10345
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000086606200082	Publication Date	2002-07-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829;1095-3795;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.836	Times cited	27	Open Access
	Notes	Conference Name: Microsc. Semicond. Mater. Conf.			Approved	Most recent IF: 3.836; 2000 IF: NA
	Call Number	UA @ lucian @ c:irua:103456			Serial	1577
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	Author	Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I.
	Title	Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer			Type	A1 Journal article
	Year	2000	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	77	Issue	4	Pages	507-509
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000088225400016	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	44	Open Access
	Notes				Approved	Most recent IF: 3.411; 2000 IF: 3.906
	Call Number	UA @ lucian @ c:irua:103448			Serial	712
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