“Optimization of experimental conditions of thin-window EPMA for ligh-element analysis of individual environmental particles”. Szalóki I, Osán J, Worobiec A, de Hoog J, Van Grieken R, X-ray spectrometry 30, 143 (2001). http://doi.org/10.1002/XRS.473.ABS
Keywords: A1 Journal article; Laboratory Experimental Medicine and Pediatrics (LEMP); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1002/XRS.473.ABS
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“Partitioning of heavy metals between estuarine sediments and dissolved phase as a function of salinity, pH and time (Scheldt estuary)”. Dekov V, van Alsenoy V, Onar N, van Put A, Van Grieken R, Geologica Balcanica 30, 65 (2001)
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Single-particle analysis of aerosols at Cheju Island, Korea, using low-Z electron probe X-ray microanalysis: a direct proof of nitrate formation from sea salts”. Ro C-U, Oh K-Y, Kim H, Kim YP, Lee CB, Kim K-H, Kang CH, Osán J, de Hoog J, Worobiec A, Van Grieken R, Environmental science and technology 35, 4487 (2001). http://doi.org/10.1021/ES0155231
Keywords: A1 Journal article; Laboratory Experimental Medicine and Pediatrics (LEMP); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1021/ES0155231
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“X-ray fluorescence”. Injuk J, Van Grieken RE page 151 (2001).
Keywords: H3 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Magnetic field dependence of the properties of excitons confined in a quantum disk”. Janssens KL, Peeters FM, Schweigert VA, Physica status solidi: B: basic research 224, 763 (2001). http://doi.org/10.1002/(SICI)1521-3951(200104)224:3<763::AID-PSSB763>3.0.CO;2-9
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.674
Times cited: 1
DOI: 10.1002/(SICI)1521-3951(200104)224:3<763::AID-PSSB763>3.0.CO;2-9
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“Structural and chemical effects on EELS L3,2 ionization edges in Ni-based intermetallic compounds”. Potapov PL, Kulkova SE, Schryvers D, Verbeeck J, Physical review : B : condensed matter and materials physics 64, 184110 (2001). http://doi.org/10.1103/PhysRevB.64.184110
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 44
DOI: 10.1103/PhysRevB.64.184110
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“Structure and microstructure of La1-xSrxMnO3 (x=0.16) films grown on a SrTiO3(110) substrate”. Lebedev OI, Verbeeck J, Van Tendeloo G, Amelinckx S, Ravazi FS, Habermeier H-U, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 81, 2865 (2001). http://doi.org/10.1080/01418610108217170
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.136
Times cited: 12
DOI: 10.1080/01418610108217170
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“Positron annihilation study of nanocrystalline Ni3Al : simulations and measurements”. Kuriplach J, van Petegem S, Hou M, Van Tendeloo G, Schryvers D, et al, Materials science forum
T2 –, 12th International Conference on Positron Annihilation (ICPA-12), AUG 06-12, 2000, UNIV BUNDERSWEHR MUNCHEN, NEUBIBERG, GERMANY 363-3, 94 (2001)
Abstract: A positron lifetime experiment is performed on samples produced by the compaction of nanocrystalline Ni3Al powder synthesized by the inert-gas condensation technique. In the lifetime spectrum we observe two components corresponding to defects. Computer (virtual) samples of n-Ni3Al are obtained using molecular dynamics combined with the Metropolis Monte Carlo technique. Positron lifetime calculations are then performed on selected regions of simulated samples. For this purpose, a new computational technique based on a generalization of the atomic superposition method for non-periodic systems was developed. Lifetimes calculated in this way are compared to experiment.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Electron energy-loss spectroscopy study of a (LaMnO3)8(SrMnO3)4 heterostructure”. Verbeeck J, Lebedev OI, Van Tendeloo G, Silcox J, Mercey B, Hervieu M, Haghiri-Gosnet AM, Applied physics letters 79, 2037 (2001). http://doi.org/10.1063/1.1403316
Abstract: An epitaxially grown heterostructure consisting of alternating layers of LaMnO3 (8 unit cells) and SrMnO3 (4 unit cells) on a SrTiO3 substrate has been studied by a combination of electron energy-loss spectroscopy (EELS) and high-resolution transmission electron microscopy (HRTEM) on an atomic scale. Excitation edges of all elements are captured with subnanometer spatial accuracy, and parametrized to obtain chemical profiles. The fine-edge structure of O K and Mn L-2,L-3 edges are interpreted as signatures of the local electronic structure and show a spatial modulation of the concentration of holes with O 2p character. The chemical concentration is found to be different for the bottom and top interface of a SrMnO3 layer. HRTEM complements the EELS results and confirms the asymmetry of the interfaces. (C) 2001 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 19
DOI: 10.1063/1.1403316
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“Trions in quantum wells”. Peeters FM, Riva C, Varga K, Physica: B : condensed matter 300, 139 (2001). http://doi.org/10.1016/S0921-4526(01)00577-4
Abstract: An overview is given of our investigation of the energy levels and of the correlation functions of the negatively and positively charged excitons (also called trions) in quantum wells in the presence of a perpendicular magnetic field, A detailed comparison is made with available experimental data in III-V and II-VI semiconductor quantum wells. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.386
Times cited: 31
DOI: 10.1016/S0921-4526(01)00577-4
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“Au particles supported on (110) anatase-TiO2”. Giorgio S, Henry CR, Pauwels B, Van Tendeloo G, Microstructure And Processing 297, 197 (2001). http://doi.org/10.1016/S0921-5093(00)01261-2
Abstract: Au particles were prepared by evaporation in ultra high vacuum at high temperature, on the surfaces of TiO2 micro-spheres with the anatase structure. The morphology and the structural deformation in Au deposits were studied by high resolution transmission electron microscopy and image simulations by the multislice technique. The particles were polyhedral, limited by (100) and (111) faces. Patches with a hexagonal lattice were found around the particles, which was interpreted as thin Au islands on the surface. In these islands the Au lattice was deformed and perfectly accommodated to the (110) surface of TiO2. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 40
DOI: 10.1016/S0921-5093(00)01261-2
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“Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, de Wolf I, Rooyackers R, Badenes G, Journal of the electrochemical society 148, G597 (2001). http://doi.org/10.1149/1.1404970
Abstract: Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.259
Times cited: 13
DOI: 10.1149/1.1404970
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“Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped GaAs/AlxGa1-xAs single quantum wells at high magnetic-fields”. Wang YJ, Leem YA, McCombe BD, Wu XG, Peeters FM, Jones ED, Reno JR, Lee XY, Jiang HW, Physical Review B 64, 161303 (2001). http://doi.org/10.1103/PhysRevB.64.161303
Abstract: Electron cyclotron resonance CR) measurements have been carried out in magnetic fields up to 32 T to study electron-phonon interaction in two heavily modulation-delta -doped GaAs/Al0.3Ga0.7As single-quantum-well samples. No measurable resonant magnetopolaron effects were observed in either sample in the region of the GaAs longitudinal optical (LO) phonons. However, when the CR frequency is above LO phonon frequency, omega (LO)=E-LO/(h) over bar, at high magnetic fields (B>27 T), electron CR exhibits a strong avoided-level-crossing splitting for both samples at frequencies close to (omega (LO)+ (E-2-E-1)1 (h) over bar, where E-2, and E-1 are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large with the minimum separation of 40 cm(-1) occurring at around 30.5 T. A detailed theoretical analysis, which includes a self-consistent calculation of the band structure and the effects of electron-phonon interaction on the CR, shows that this type of splitting is due to a three-level resonance between the second Landau level of the first electron subband and the lowest Landau level of the second subband plus one GaAs LO phonon. The absence of occupation effects in the final states and weak screening or this three-level process yields large energy separation even in the presence of high electron densities. Excellent agreement between the theory and the experimental results is obtained.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 7
DOI: 10.1103/PhysRevB.64.161303
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“Why are sputter deposited Nd1+xBa2-xCu3O7-\delta thin films flatter than NdBa2Cu3O7-\delta films?”.Bals S, Van Tendeloo G, Salluzzo M, Maggio-Aprile I, Applied physics letters 79, 3660 (2001). http://doi.org/10.1063/1.1421622
Abstract: High-resolution electron microscopy and scanning tunneling microscopy have been used to compare the microstructure of NdBa2Cu3O7-delta and Nd1+xBa2-xCu3O7-delta thin films. Both films contain comparable amounts of Nd2CuO4 inclusions. Antiphase boundaries are induced by unit cell high steps at the substrate or by a different interface stacking. In Nd1+xBa2-xCu3O7-delta the antiphase boundaries tend to annihilate by the insertion of extra Nd layers. Stacking faults, which can be characterized as local Nd2Ba2Cu4O9 inclusions, also absorb the excess Nd. A correlation is made between the excess Nd and the absence of growth spirals at the surface of the Nd-rich films. (C) 2001 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 13
DOI: 10.1063/1.1421622
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“Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM”. de Gryse O, Clauws P, Lebedev O, van Landuyt J, Vanhellemont J, Claeys C, Simoen E, Physica: B : condensed matter
T2 –, 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY 308, 294 (2001). http://doi.org/10.1016/S0921-4526(01)00801-8
Abstract: Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.386
Times cited: 3
DOI: 10.1016/S0921-4526(01)00801-8
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“EFTEM study of plasma etched low-k Si-O-C dielectrics”. Hens S, Bender H, Donaton RA, Maex K, Vanhaelemeersch S, van Landuyt J, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND , 415 (2001)
Abstract: Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Microstructure of quenched Ni-rich Ni-Ti shape memory alloys”. Somsen C, Kästner J, Wassermann EF, Boullay P, Schryvers D, Journal de physique: 4
T2 –, 8th European Symposium on Martensitic Transformations (ESOMAT2000), SEP 04-08, 2000, COMO, ITALY 11, 445 (2001). http://doi.org/10.1051/jp4:2001874
Abstract: Microstructural investigations with transmission electron microscopy were carried out on quenched Ni-Ti alloys with 52 and 54.5 at% Ni. For the Ni52Ti48 specimen long time exposed diffraction patterns of a single grain show besides the expected reflections of the B2-phase, two sets of extra reflections in different zones. The first type of spots is explained by lattice displacement waves, which are regarded as precursors of the martensitic Ni-Ti phases, B 19' and R-phase, respectively. The second set of reflection with more diffuse intensity than the other reflections is related to Ni4Ti3 precipitates in an early state of formation. For the Ni-richer Ni54.5Ti45.5 alloy only Ni4Ti3 precipitates in an early state of formation are found but no precursors of the B 19'- and R-phase.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1051/jp4:2001874
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“Evidence for another low-temperature phase transition in tetragonal Pb(ZrxTi1-x)O3 (x=0.515,0.520)”. Mishra RSK, Pandey D, Lemmens H, Van Tendeloo G, Physical review : B : condensed matter and materials physics 64, 054104 (2001). http://doi.org/10.1103/PhysRevB.64.054101
Abstract: Results of dielectric and resonance frequency (f(r)) measurements below room temperature are presented for Pb(ZrxTi1-x)O-3, x = 0.515 and 0.520. It is shown that the temperature coefficient of f(r) changes sign from negative to positive around 210 and 265 K for x = 0.520 and 200 and 260 K for x = 0.515. Anomalies in the real part of the dielectric constant (epsilon') are observed around the same temperatures at which the temperature coefficient of f(r) changes sign because of the electrostrictive coupling between the elastic and dielectric responses. Low-temperature powder x-ray-diffraction (XRD) data, however, reveal only one transition from the tetragonal to monoclinic phase similar to that reported by Noheda et al. [Phys. Rev. B, 61, 8687 (2000)]. Electron-diffraction data, on the other hand, reveal yet another structural transition at lower temperatures corresponding to the second anomaly in the epsilon' vs T and f(r) vs T curves. This second transition is shown to be a cell-doubling transition not observed by Noheda et al. in their XRD studies. The observation of superlattice reflections raises doubts about the correctness of the Cm space group proposed by Noheda et al. for the monoclinic phase of Pb(ZrxTi(1-x))O-3 below the second transition temperature.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
DOI: 10.1103/PhysRevB.64.054101
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“The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Materials science in semiconductor processing 4, 117 (2001). http://doi.org/10.1016/S1369-8001(00)00110-4
Abstract: Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
Times cited: 6
DOI: 10.1016/S1369-8001(00)00110-4
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“Free-carrier effects in gallium nitride epilayers: Valence-band dispersion”. Shields PA, Nicholas RJ, Peeters FM, Beaumont B, Gibart P, Physical Review B 64, 155303 (2001). http://doi.org/10.1103/PhysRevB.64.081203
Abstract: The dispersion of the A-valence-band in GaN has been deduced from the observation of high-index magnetoexcitonic states in polarized interband magnetoreflectivity and is found to be strongly nonparabolic with a mass in the range 1.2-1.8m(e). It matches the theory of Kim et al. [Phys. Rev. B 56, 7363 (1997)] extremely well, which also gives a strong k-dependent A-valence-band mass. A strong phonon coupling leads to quenching of the observed transitions at about an LO-phonon energy above the band gap and a strong nonparabolicity. The valence band was deduced from subtracting from the reduced dispersion the electron contribution with a model that includes a full treatment of the electron-phonon interaction.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.64.081203
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“Bright to dark exciton transition in symmetric coupled quantum wells”. Chang K, Peeters FM, Physical review : B : condensed matter and materials physics 63 (2001). http://doi.org/10.1103/PhysRevB.63.153307
Abstract: The energy dispersion of an exciton in a coupled quantum well is modified by an external in-plane magnetic field. We find that the in-plane magnetic field can shift the ground state of the magnetoexciton from a zero in-plane center-of-mass (CM) momentum to a finite CM momentum, and render the ground state of the magnetoexciton stable against radiative recombination due to momentum conservation. At the same time, a spatial separation of the electron and hole is realized. Thus an in-plane magnetic field can be used to tailor the radiative properties of excitons in coupled quantum wells.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 42
DOI: 10.1103/PhysRevB.63.153307
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“In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines”. Teodorescu V, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of applied physics 90, 167 (2001). http://doi.org/10.1063/1.1378812
Abstract: The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 97
DOI: 10.1063/1.1378812
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“Kinetic modeling of relaxation phenomena after photodetachment in a rf electronegative SiH4 discharge”. Yan M, Bogaerts A, Gijbels R, Physical review : E : statistical physics, plasmas, fluids, and related interdisciplinary topics 63 (2001). http://doi.org/10.1103/PhysRevE.63.026405
Abstract: The global relaxation process after pulsed laser induced photodetachment in a rf electronegative SIH4 discharge is studied by a self-consistent kinetic one-dimensional particle-in-cell-Monte Carlo model. Our results reveal a comprehensive physical picture of the relaxation process, including the main plasma variables, after a perturbation up to the full recovery of the steady state. A strong influence of the photodetachment on the discharge is found, which results from an increase of the electron density, leading to a weaker bulk field, and hence to a drop in the high energy tail of the electron energy distribution function (EEDF), a reduction of the reaction rates of electron impact attachment and ionization, and a subsequent decrease of the positive and negative ion densities. All the plasma quantities related to electrons recover synchronously. The recovery time of the ion densities is about 1-2 orders of magnitude longer than that of the electrons due to different recovery mechanisms. The modeled behavior of all the charged particles agrees very well with experimental results from the literature. In addition, our work clarifies some unclear processes assumed in the literature, such as the relaxation of the EEDF, the evolution of the electric field, and the recovery of negative ions.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.366
Times cited: 4
DOI: 10.1103/PhysRevE.63.026405
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“Transmission electron microscopy investigation of Bi-2223/Ag tapes”. Gottschalck Andersen L, Bals S, Van Tendeloo G, Poulsen HF, Liu YL, Physica: C : superconductivity 353, 251 (2001). http://doi.org/10.1016/S0921-4534(00)01755-X
Abstract: The microstructure of (Bi,Pb)2Sr2Ca2Cu3Ox (Bi-2223) tapes has been investigated by means of transmission electron microscopy (TEM) and high-resolution TEM. The emphasis has been placed on: (1) an examination of the grain morphology and size, (2) grain and colony boundary angles, which are formed during the tape processing, (3) a study of the grain boundaries on an atomic scale, including intergrowth investigations. Tapes with different process parameters have been compared with respect to the microstructure. A fully processed tape has on the average 50% thicker Bi-2223 grains than a tape after the first annealing. The angles of c-axis tilt grain boundaries are on average 14° and 26° for the fully processed tape and the tape after the first annealing, respectively. The intergrowth content (15%) and distribution are similar in these two tapes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 13
DOI: 10.1016/S0921-4534(00)01755-X
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“The influence of the h-BN morphology and structure on the c-BN growth”. Nistor L, Teodorescu V, Ghica C, van Landuyt J, Dinca G, Georgeoni P, Diamond and related materials
T2 –, 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL 10, 1352 (2001). http://doi.org/10.1016/S0925-9635(00)00377-0
Abstract: The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 17
DOI: 10.1016/S0925-9635(00)00377-0
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“Growth of R1+xBa2-xCu3O7-\delta epitaxial films investigated by in situ scanning tunneling microscopy”. Salluzzo M, Aruta C, Maggio-Aprile I, Fischer Ø, Bals S, Zegenhagen J, Physica status solidi: A: applied research 186, 339 (2001). http://doi.org/10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
Abstract: The problem of the epitaxial growth of the high temperature superconducting R1+xBa2xCu3O7δ (R = Y or rare earth except Ce and Tb) films has been addressed. Using in situ ultra high vacuum Scanning Tunneling Microscopy (UHV-STM) we have studied the role of cationic substitution and substrate mismatch on the growth mode of stoichiometric and Nd-rich Nd1+xBa2xCu3O7δ thin films. The results are compared to the growth of Y1Ba2Cu3O7δ, Dy1Ba2Cu3O7δ and Gd1Ba2Cu3O7δ epitaxial films. Two main phenomena are investigated: a) the first stage of the direct nucleation on the substrate and b) the crossover between 2D and 3D growth upon increasing the film thickness. At the first stage of the growth, pseudo-cubic perovskite (Re,Ba)CuO3 nuclei are formed. While they disappear after the growth of a few nm in stoichiometric films, they persist on the surface of Nd-rich films of up to 110 nm thickness. Stoichiometric R1+xBa2xCu3O7δ films exhibit a rough morphology with increasing thickness due to island growth mode, whereas Nd-rich films remain smooth and continue to grow layer by layer. It is proposed that linear defects (like anti-phase boundaries), which are formed due to the misalignment of growth fronts, are the source of screw dislocations in stoichiometric films. In Nd-rich films, linear defects are eliminated through the insertion of (Nd,Ba)CuO3 extra layers without introduction of any screw dislocations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 17
DOI: 10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
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“In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates”. Ghica C, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of materials research 16, 701 (2001). http://doi.org/10.1557/JMR.2001.0121
Abstract: The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
Times cited: 4
DOI: 10.1557/JMR.2001.0121
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“HREM investigation of a Fe/GaN/Fe tunnel junction”. Nistor L, Bender H, van Landuyt J, Nemeth S, Boeve H, De Boeck J, Borghs G, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England , 53 (2001)
Abstract: The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy”. Hens S, van Landuyt J, Bender H, Boullart W, Vanhaelemeersch S, Materials science in semiconductor processing 4, 109 (2001). http://doi.org/10.1016/S1369-8001(00)00147-5
Abstract: The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
DOI: 10.1016/S1369-8001(00)00147-5
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“TEM of ultra-thin DyBa2Cu3O7-x films deposited on TiO2 terminated SrTiO3”. Bals S, Rijnders G, Blank DHA, Van Tendeloo G, Physica: C : superconductivity 355, 225 (2001). http://doi.org/10.1016/S0921-4534(01)00034-X
Abstract: Using pulsed laser deposition ultra-thin DyBa2Cu3O7-x films were deposited on a single terminated (0 0 1) SrTiOr(3) substrate. The initial growth was studied by high-resolution electron microscopy. Two different types of interface arrangements occur and were determined as: bulk-SrO-TiO2-BaO-CuO-BaO-CuO2-Dy-CuO2-BaO bulk and bulk-SrO-TiO2-BaO-CuO2-Dy-CuO2-BaO-CuO-BaO-bulk This variable growth sequence causes structural shifts, resulting in antiphase boundaries with displacement vector R = [0 0 1/3]. as well as local chemical variations. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 26
DOI: 10.1016/S0921-4534(01)00034-X
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