NANOlab Center of Excellence literature database -- Query Results

“Mechanism for Ohmic contact formation on Si₃N₄ passivated AlGaN/GaN high-electron-mobility transistors”. Van Daele B, Van Tendeloo G, Derluyn J, Shrivastava P, Lorenz A, Leys MR, Germain M;, Applied physics letters 89, Artn 201908 (2006). http://doi.org/10.1063/1.2388889 Keywords: A1 Journal article; Electron microscopy for materials research (EMAT) Impact Factor: 3.411 Times cited: 15 DOI: 10.1063/1.2388889 Additional Links: UA library record; WoS full record; WoS citing articles show.php?record=1978
“Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN”. van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys MR, Germain M, Springer proceedings in physics 107, 389 (2005) Abstract: Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing. Keywords: A1 Journal article; Electron microscopy for materials research (EMAT) Additional Links: UA library record; WoS full record; show.php?record=3707

Abstract: Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing.

Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)

Additional Links: UA library record; WoS full record;

show.php?record=3707