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“Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas”. Volkov VV, van Landuyt J, Marushkin KM, Gijbels R, Férauge C, Vasilyev MG, Shelyakin AA, Sokolovsky AA, Journal of crystal growth 173, 285 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.751
Times cited: 4
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“Electron microscopic and X-ray structural analysis of the layered crystals TaReSe4: structure, defect structure, and microstructure, including rotation twins”. Volkov VV, van Landuyt J, Amelinckx S, Pervov VS, Makhonina EV, Journal of solid state chemistry 135, 235 (1998). http://doi.org/10.1006/jssc.1997.7621
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 3
DOI: 10.1006/jssc.1997.7621
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“Electron microscopy and mass-spectrometry study of In GaAsP/InP heterostructures (p-i-n diodes) grown by liquid phase epitaxy”. Volkov VV, Luyten W, van Landuyt J, Férauge C, Oksenoid KG, Gijbels R, Vasilev MG, Shelyakin AA, Lazarev VB, Physica status solidi: A: applied research 140, 73 (1993). http://doi.org/10.1002/pssa.2211400105
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 7
DOI: 10.1002/pssa.2211400105
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“Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy”. Luyten W, Volkov VV, van Landuyt J, Amelinckx S, Férauge C, Gijbels R, Vasilev MG, Shelyakin AA, Lazarev VB, Physica status solidi: A: applied research 140, 453 (1993). http://doi.org/10.1002/pssa.2211400216
Abstract: Broad area as well as buried heterostructure lasers based on In0.72Ga0.28As0.62P0.38/InP and emitting at 1.3 mum are grown by liquid phase epitaxy and are studied in detail by means of transmission electron microscopy, X-ray diffraction, secondary ion mass-spectrometry, and electroluminescence. The InGaAsP epilayer is found to be well lattice-matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in the InGaAsP alloy. We also report on the high performance characteristics of the infrared lasers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 3
DOI: 10.1002/pssa.2211400216
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“Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport”. Volkov VV, van Heurck C, van Landuyt J, Amelinckx S, Zhukov EG, Polulyak ES, Novotortsev VM, Crystal research and technology 28, 1051 (1993). http://doi.org/10.1002/crat.2170280804
Abstract: The growth features of FeCr2S4 spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr7S12 and FeCr8S12, both based on the NiAs structure, can essentially inhibit the growth of large FeCr2S4 spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.935
Times cited: 1
DOI: 10.1002/crat.2170280804
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“Giant Pd clusters observed by high resolution electron microscopy”. Volkov VV, Van Tendeloo G, Vargaftik MN, Stolyarov IP, Moiseev II, Mendeleev communications , 187 (1993)
Abstract: The giant cationic palladium clusters, approximate formula Pd561L60(OAc)180 (L = Dipy, Phen), were characterized by electron diffraction and high resolution microscopy to contain an FCC metal core, most of the larger Pd particles (8 nm) exhibiting multiple twinning, evidence for a distorted icosahedral structure.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.34
Times cited: 10
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“Giant Pd clusters observed by HREM”. Volkov VV, Van Tendeloo G, Vargaftik MN, Stolygarov IP, Moiseev II, Mendeleev communications , 187 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.34
Times cited: 10
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“High-resolution electron microscopy observations of large Pd clusters”. Volkov VV, Van Tendeloo G, Vargaftik MN, Moiseev II, Journal of crystal growth 132, 359 (1993). http://doi.org/10.1016/0022-0248(93)90059-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 7
DOI: 10.1016/0022-0248(93)90059-6
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“HREM image analysis up to structure determination of SbCrSe3: a new 1D ferromagnet”. Volkov VV, Van Tendeloo G, van Landuyt J, Amelinckx S, Busheva EE, Shabunina GG, Aminov TG, Novotortsev VM, Journal of solid state chemistry 132, 257 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 1
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“Long- and short-distance ordering of the metal cores of giant Pd clusters”. Volkov VV, Van Tendeloo G, Tsirkov GA, Cherkashina NV, Vargaftik MN, Moiseev II, Novotortsev VM, Kvit AV, Chuvilin AL, Journal of crystal growth 163, 377 (1996). http://doi.org/10.1016/0022-0248(95)01008-4
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 28
DOI: 10.1016/0022-0248(95)01008-4
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“LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas”. Volkov VV, van Landuyt J, Marushkin K, Gijbels R, Férauge C, Vasilyev MG, Shelyakin AA, Sokolovsky AA, Sensors and actuators : A : physical 62, 624 (1997). http://doi.org/10.1016/S0924-4247(97)01377-0
Abstract: Highly effective IR light-emitting diodes operating at the wavelength 1.66 mu m and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/ In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM),electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CK, gas sensor has been developed and fabricated an the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested, It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2 x 1 km. (C) 1997 Elsevier Science S.A.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.499
Times cited: 3
DOI: 10.1016/S0924-4247(97)01377-0
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