Records |
Author |
Van 't dack, L.; Gijbels, R.; Walker, C.T. |
Title |
Modern developments and applications in microbeam analysis: proceedings of the 10th Workshop of the European Microbeam Analysis Society (EMAS), Antwerp, Belgium, May 6-10, 2007 |
Type |
Editorial |
Year |
2008 |
Publication |
Microchimica acta |
Abbreviated Journal |
Microchim Acta |
Volume |
161 |
Issue |
3/4 |
Pages |
285-286 |
Keywords |
Editorial; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000256175600001 |
Publication Date |
2008-05-23 |
Series Editor |
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Series Title |
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Abbreviated Series Title ![sorted by Abbreviated Series Title field, descending order (down)](img/sort_desc.gif) |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0026-3672;1436-5073; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
4.58 |
Times cited |
1 |
Open Access |
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Notes |
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Approved |
Most recent IF: 4.58; 2008 IF: 1.910 |
Call Number |
UA @ lucian @ c:irua:69291 |
Serial |
2157 |
Permanent link to this record |
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Author |
Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; |
Title |
Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry |
Type |
A1 Journal article |
Year |
1993 |
Publication |
Applied surface science
T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE |
Abbreviated Journal |
Appl Surf Sci |
Volume |
63 |
Issue |
1-4 |
Pages |
45-51 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1993KF03400009 |
Publication Date |
2002-10-16 |
Series Editor |
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Series Title |
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Abbreviated Series Title ![sorted by Abbreviated Series Title field, descending order (down)](img/sort_desc.gif) |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0169-4332; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.711 |
Times cited |
13 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:104539 |
Serial |
2932 |
Permanent link to this record |