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“Functionalization of MWCNTs with atomic nitrogen”. Ruelle B, Felten A, Ghijsen J, Drube W, Johnson RL, Liang D, Erni R, Van Tendeloo G, Sophie P, Dubois P, Godfroid T, Hecq M, Bittencourt C;, Micron 40, 85 (2009). http://doi.org/10.1016/j.micron.2008.01.003
Abstract: In this study of the changes induced by exposing MWCNTs to a nitrogen plasma, it was found by HRTEM that the atomic nitrogen exposure does not significantly etch the surface of the carbon nanotube (CNT). Nevertheless, the atomic nitrogen generated by a microwave plasma effectively grafts amine, nitrile, amide, and oxime groups onto the CNT surface, as observed by XPS, altering the density of valence electronic states, as seen in UPS. (C) 2008 Elsevier Ltd. All fights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
Times cited: 24
DOI: 10.1016/j.micron.2008.01.003
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“How to optimize the experimental design of quantitative atomic resolution TEM experiments?”.Van Aert S, den Dekker AJ, van Dyck D, Micron 35, 425 (2004). http://doi.org/10.1016/j.micron.2004.01.007
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.98
Times cited: 14
DOI: 10.1016/j.micron.2004.01.007
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“Imaging from atomic structure to electronic structure”. Xu Q, Zandbergen HW, van Dyck D, Micron 43, 524 (2012). http://doi.org/10.1016/j.micron.2011.10.024
Abstract: This paper discusses the possibility of retrieving the electron distribution (with highlighted valence electron distribution information) of materials from recorded HREM images. This process can be achieved by solving two inverse problems: reconstruction of the exit wave and reconstruction of the electron distribution from exit waves. The first inverse problem can be solved using a focal series reconstruction method. We show that the second inverse problem can be solved by combining a series of exit waves recorded at different thickness conditions. This process is designed based on an improved understanding of the dynamical scattering process. It also explains the fundamental difficulty of obtaining the valence electron distribution information and the basis of our solution.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.98
DOI: 10.1016/j.micron.2011.10.024
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“Model-based electron microscopy : from images toward precise numbers for unknown structure parameters”. Van Aert S, van den Broek W, Goos P, van Dyck D, Micron 43, 509 (2012). http://doi.org/10.1016/j.micron.2011.10.019
Abstract: Statistical parameter estimation theory is proposed as a method to quantify electron microscopy images. It aims at obtaining precise and accurate values for the unknown structure parameters including, for example, atomic column positions and types. In this theory, observations are purely considered as data planes, from which structure parameters have to be determined using a parametric model describing the images. The method enables us to measure positions of atomic columns with a precision of the order of a few picometers even though the resolution of the electron microscope is one or two orders of magnitude larger. Moreover, small differences in averaged atomic number, which cannot be distinguished visually, can be quantified using high-angle annular dark field scanning transmission electron microscopy images. Finally, it is shown how to optimize the experimental design so as to attain the highest precision. As an example, the optimization of the probe size for nanoparticle radius measurements is considered. It is also shown how to quantitatively balance signal-to-noise ratio and resolution by adjusting the probe size.
Keywords: A1 Journal article; Engineering Management (ENM); Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.98
Times cited: 7
DOI: 10.1016/j.micron.2011.10.019
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“One-step synthesis of a suspended ultrathin graphene oxide film: Application in transmission electron microscopy”. Kirilenko DA, Dideykin AT, Aleksenskiy AE, Sitnikova AA, Konnikov SG, Vul' AY, Micron 68, 23 (2015). http://doi.org/10.1016/j.micron.2014.08.006
Abstract: Ultrathin graphene films find their use as advantageous support for nano- and biomaterials investigations. Thin film causes a very slight deterioration to measured signals, thus providing more details of the object's structure at nanoscale. The ultimate thinness of graphene works in the best way for this purpose. However, obtaining suspended thin film of a large-area, which is convenient for applications, is often a relatively complicated and time-consuming task. Here we present a one-step 1-min technique for synthesis of an extremely thin (about 1-2 nm) continuous film suspended over cells of a conventional copper grid (50-400 mu m mesh). This technique enables us to acquire a large-area film which is water-resistant, stable in organic solvents and can act as a support when studying nanoparticles or biomaterials. Moreover, the very mechanism of the film formation can be interesting from the point of view of other applications of ultrathin graphene oxide papers. (C) 2014 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
Times cited: 13
DOI: 10.1016/j.micron.2014.08.006
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“Study of changes in composition and EELS ionization edges upon Ni4Ti3 precipitation in a NiTi alloy”. Yang Z, Schryvers D, Micron 37, 503 (2006). http://doi.org/10.1016/j.micron.2005.08.002
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
Times cited: 10
DOI: 10.1016/j.micron.2005.08.002
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“Ultrastructure and composition of cell wall appositions in the roots of Asplenium (Polypodiales)”. Leroux O, Leroux F, Bagniewska-Zadworna, Knox JP, Claeys M, Bals S, Viane RLL, Micron 42, 863 (2011). http://doi.org/10.1016/j.micron.2011.06.002
Abstract: Cell wall appositions (CWAs), formed by the deposition of extra wall material at the contact site with microbial organisms, are an integral part of the response of plants to microbial challenge. Detailed histological studies of CWAs in fern roots do not exist. Using light and electron microscopy we examined the (ultra)structure of CWAs in the outer layers of roots of Asplenium species. All cell walls studded with CWAs were impregnated with yellow-brown pigments. CWAs had different shapes, ranging from warts to elongated branched structures, as observed with scanning and transmission electron microscopy. Ultrastructural study further showed that infecting fungi grow intramurally and that they are immobilized by CWAs when attempting to penetrate intracellularly. Immunolabelling experiments using monoclonal antibodies indicated pectic homogalacturonan, xyloglucan, mannan and cellulose in the CWAs, but tests for lignins and callose were negative. We conclude that these appositions are defense-related structures made of a non-lignified polysaccharide matrix on which phenolic compounds are deposited in order to create a barrier protecting the root against infections.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
Times cited: 20
DOI: 10.1016/j.micron.2011.06.002
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“Quantitative in-situ TEM nanotensile testing of single crystal Ni facilitated by a new sample preparation approach”. Samaeeaghmiyoni V, Idrissi H, Groten J, Schwaiger R, Schryvers D, Micron 94, 66 (2017). http://doi.org/10.1016/j.micron.2016.12.005
Abstract: Twin-jet electro-polishing and Focused Ion Beam (FIB) were combined to produce small size Nickel single crystal specimens for quantitative in-situ nanotensile experiments in the transmission electron microscope. The combination of these techniques allows producing samples with nearly defect-free zones in the centre in contrast to conventional FIB-prepared samples. Since TEM investigations can be performed on the electro-polished samples prior to in-situ TEM straining, specimens with desired crystallographic orientation and initial microstructure can be prepared. The present results reveal a dislocation nucleation controlled plasticity, in which small loops induced by FIB near the edges of the samples play a central role.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
Times cited: 11
DOI: 10.1016/j.micron.2016.12.005
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“Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope”. Cooper D, Denneulin T, Bernier N, Béché, A, Rouvière J-L, Micron 80, 145 (2016). http://doi.org/10.1016/J.MICRON.2015.09.001
Abstract: The last few years have seen a great deal of progress in the development of transmission electron microscopy based techniques for strain mapping. New techniques have appeared such as dark field electron holography and nanobeam diffraction and better known ones such as geometrical phase analysis have been improved by using aberration corrected ultra-stable modern electron microscopes. In this paper we apply dark field electron holography, the geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images, nanobeam diffraction and precession diffraction, all performed at the state-of-the-art to five different types of semiconductor samples. These include a simple calibration structure comprising 10-nm-thick SiGe layers to benchmark the techniques. A SiGe recessed source and drain device has been examined in order to test their capabilities on 2D structures. Devices that have been strained using a nitride stressor have been examined to test the sensitivity of the different techniques when applied to systems containing low values of deformation. To test the techniques on modern semiconductors, an electrically tested device grown on a SOI wafer has been examined. Finally a GaN/AlN superlattice was tested in order to assess the different methods of measuring deformation on specimens that do not have a perfect crystalline structure. The different deformation mapping techniques have been compared to one another and the strengths and weaknesses of each are discussed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
Times cited: 50
DOI: 10.1016/J.MICRON.2015.09.001
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“Nanoscale investigation by TEM and STEM-EELS of the laser induced yellowing”. Godet M, Vergès-Belmin V, Gauquelin N, Saheb M, Monnier J, Leroy E, Bourgon J, Verbeeck J, Andraud C, Micron 115, 25 (2018). http://doi.org/10.1016/j.micron.2018.08.006
Abstract: Nd-YAG QS laser cleaning of soiled stone at 1064 nm can sometimes result in a more yellow appearance compared to other cleaning techniques. Especially in France, this yellowing effect is still considered as a major aesthetic issue by the architects and conservators. One explanation states that the yellowing is linked to the formation of iron-rich nanophase(s) through the laser beam interaction with black crusts that would re-deposit on the cleaned substrate after irradiation. To characterize these nanophases, a model crust containing hematite was elaborated and laser irradiated using a Nd-YAG QS laser. The color of the sample shifted instantaneously from red to a bright yellow and numerous particles were ablated in a visible smoke. Transmission electron microscopy (TEM) was used to examine the morphology and the crystallinity of the neo-formed compounds, both on the surface of the samples and in the ablated materials. In addition, an investigation of the chemical and structural properties of the nanophases was conducted by X-ray dispersive energy (EDX) and electron energy loss (EELS) spectroscopies. It was found that both the surface of the sample and the ablated materials are covered by crystallized nano-spheres and nano-residues, all containing iron and oxygen, sometimes along with calcium and sulfur. In particular an interfacial area containing the four elements was evidenced between some nanostructures and the substrate. Magnetite Fe3O4 was also identified at the nanoscale. This study demonstrates that the laser yellowing of a model crust is linked to the presence of iron-rich nanophases including CaxFeySzOδ nanostructures and magnetite Fe3O4 at the surface after irradiation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
Times cited: 9
DOI: 10.1016/j.micron.2018.08.006
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“Effectiveness of reducing the influence of CTAB at the surface of metal nanoparticles during in situ heating studies by TEM”. De Meyer R, Albrecht W, Bals S, Micron 144, 103036 (2021). http://doi.org/10.1016/j.micron.2021.103036
Abstract: In situ TEM is a valuable technique to offer novel insights in the behavior of nanomaterials under various conditions. However, interpretation of in situ experiments is not straightforward since the electron beam can impact the outcome of such measurements. For example, ligands surrounding metal nanoparticles transform into a protective carbon layer upon electron beam irradiation and may impact the apparent thermal stability during in situ heating experiments. In this work, we explore the effect of different treatments typically proposed to remove such ligands. We found that plasma treatment prior to heating experiments for Au nanorods and nanostars increased the apparent thermal stability of the nanoparticles, while an activated carbon treatment resulted in a decrease of the observed thermal stability. Treatment with HCl barely changed the experimental outcome. These results demonstrate the importance of carefully selecting pre-treatments procedures during in situ heating experiments.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
DOI: 10.1016/j.micron.2021.103036
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“Adsorption of small molecules on graphene”. Leenaerts O, Partoens B, Peeters FM, Microelectronics journal 40, 860 (2009). http://doi.org/10.1016/j.mejo.2008.11.022
Abstract: We investigate the adsorption process of small molecules on graphene through first-principles calculations and show the presence of two main charge transfer mechanisms. Which mechanism is the dominant one depends on the magnetic properties of the adsorbing molecules. We explain these mechanisms through the density of states of the system and the molecular orbitals of the adsorbates, and demonstrate the possible difficulties in calculating the charge transfer from first principles between a graphene sheet and a molecule. Our results are in good agreement with experiment.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
Times cited: 116
DOI: 10.1016/j.mejo.2008.11.022
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“Dielectric mismatch effect on coupled impurity states in a freestanding nanowire”. Li B, Partoens B, Peeters FM, Magnus W, Microelectronics journal 40, 446 (2009). http://doi.org/10.1016/j.mejo.2008.06.028
Abstract: We studied the coupled impurity states in a freestanding semiconductor nanowire (NW), within the effective mass approximation and including the effect of the dielectric mismatch, by using finite element method. Bonding and anti-bonding states are found and their energies converge with increasing distance di between the two impurities. The dependence of the binding energy on the wire radius R and the distance di between the two impurities is investigated, and we compare it with the result of a freestanding NW that contains a single impurity.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
Times cited: 4
DOI: 10.1016/j.mejo.2008.06.028
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“Neutral shallow donors near a metallic interface”. Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Microelectronics journal 40, 753 (2009). http://doi.org/10.1016/j.mejo.2008.11.010
Abstract: The effect of a metallic gate on the bound states of a shallow donor located near the gate is studied. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anti-crossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
Times cited: 1
DOI: 10.1016/j.mejo.2008.11.010
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“Resonant tunneling in graphene microstructures”. Milton Pereira J, Vasilopoulos P, Peeters FM, Microelectronics journal 39, 534 (2008). http://doi.org/10.1016/j.mejo.2007.07.099
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
Times cited: 9
DOI: 10.1016/j.mejo.2007.07.099
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“Theoretical study of InAs/GaAs quantum dots grown on [11k] substrates in the presence of a magnetic field”. Mlinar V, Peeters FM, Microelectronics journal 37, 1427 (2006). http://doi.org/10.1016/j.mejo.2006.05.018
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
DOI: 10.1016/j.mejo.2006.05.018
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“Tuning of the optical properties of (11k) grown InAs quantum dots by the capping layer”. Mlinar V, Peeters FM, Microelectronics journal 39, 359 (2008). http://doi.org/10.1016/j.mejo.2007.07.052
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
DOI: 10.1016/j.mejo.2007.07.052
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“Type II quantum dots in magnetic fields: excitonic behaviour”. Janssens KL, Partoens B, Peeters FM, Microelectronics journal 34, 347 (2003). http://doi.org/10.1016/S0026-2692(03)00023-5
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
Times cited: 1
DOI: 10.1016/S0026-2692(03)00023-5
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“Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers”. De Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, Microelectronic engineering 45, 277 (1999). http://doi.org/10.1016/S0167-9317(99)00180-X
Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
DOI: 10.1016/S0167-9317(99)00180-X
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“Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility”. Lujan GS, Magnus W, Sorée B, Ragnarsson LA, Trojman L, Kubicek S, De Gendt S, Heyns A, De Meyer K, Microelectronic engineering 80, 82 (2005). http://doi.org/10.1016/j.mee.2005.04.047
Abstract: The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 1
DOI: 10.1016/j.mee.2005.04.047
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“First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts”. Pourtois G, Lauwers A, Kittl J, Pantisano L, Sorée B, De Gendt S, Magnus W, Heyns A, Maex K, Microelectronic engineering 80, 272 (2005). http://doi.org/10.1016/j.mee.2005.04.080
Abstract: The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.806
Times cited: 31
DOI: 10.1016/j.mee.2005.04.080
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“Mesoscopic superconducting disks: fluxoids in a box”. Peeters FM, Schweigert VA, Deo PS, Microelectronic engineering 47, 393 (1999). http://doi.org/10.1016/S0167-9317(99)00242-7
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 1
DOI: 10.1016/S0167-9317(99)00242-7
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“Phase formation in intermixed NiGe thin films : influence of Ge content and low-temperature nucleation of hexagonal nickel germanides”. De Schutter B, Devulder W, Schrauwen A, van Stiphout K, Perkisas T, Bals S, Vantomme A, Detavernier C, Microelectronic engineering 120, 168 (2014). http://doi.org/10.1016/j.mee.2013.09.004
Abstract: In this study, we focus on phase formation in intermixed NiGe thin films as they represent a simplified model of the small intermixed interface layer that is believed to form upon deposition of Ni on Ge and where initial phase formation happens. A combinatorial sputter deposition technique was used to co-deposit a range of intermixed NiGe thin films with Ge concentrations varying between 0 and 50 at.%Ge in a single deposition on both Ge (100) and inert SiO2 substrates. In situ X-ray diffraction and transmission electron microscopy where used to study phase formation. In almost the entire composition range under investigation, crystalline phases where found to be present in the as-deposited films. Between 36 and 48 at.%Ge, high-temperature hexagonal nickel germanides were found to occur metastabily below 300 °C, both on SiO2 and Ge (100) substrates. For Ge concentrations in the range between 36 and 42 at.%, this hexagonal germanide phase was even found to be present at room temperature in the as-deposited films. The results obtained in this work could provide more insight in the phase sequence of a pure Ni film on Ge.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
Times cited: 9
DOI: 10.1016/j.mee.2013.09.004
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“Snake orbits in hybrid semiconductor/ferromagnetic devices”. Peeters FM, Reijniers J, Badalian SM, Vasilopoulos P, Microelectronic engineering 47, 405 (1999). http://doi.org/10.1016/S0167-9317(99)00245-2
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Impact Factor: 1.806
Times cited: 6
DOI: 10.1016/S0167-9317(99)00245-2
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“HfOx as RRAM material : first principles insights on the working principles”. Clima S, Govoreanu B, Jurczak M, Pourtois G, Microelectronic engineering 120, 13 (2014). http://doi.org/10.1016/j.mee.2013.08.002
Abstract: First-principles simulations were employed to gain atomistic insights on the working principles of amorphous HfO2 based Resistive Random Access Memory stack: the nature of the defect responsible for the switching between the High and Low Resistive States has been unambiguously identified to be the substoichiometric Hf sites (commonly called oxygen vacancy-V-O) and the kinetics of the process have been investigated through the study of O diffusion. Also the role of each material layer in the TiN/HfO2/Hf/TiN RRAM stack and the impact of the deposition techniques have been examined: metallic Hf sputtering is needed to provide an oxygen exchange layer that plays the role of defect buffer. TiN shall be a good defect barrier for O but a bad defect buffer layer. A possible scenario to explain the device degradation (switching failure) mechanism has been proposed – the relaxation of the metastable amorphous phase towards crystalline structure leads to denser, more structured cluster that can increase the defect migration barriers. (C) 2013 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.806
Times cited: 22
DOI: 10.1016/j.mee.2013.08.002
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“Towards CMOS-compatible single-walled carbon nanotube resonators”. Pathangi H, Cherman V, Khaled A, Sorée B, Groeseneken G, Witvrouw A, Microelectronic engineering 107, 219 (2013). http://doi.org/10.1016/j.mee.2012.06.007
Abstract: We report a totally CMOS-compatible fabrication technique to assemble horizontally suspended single-walled carbon nanotube (SWCNT) resonators. Individual SWCNTs are assembled in parallel at multiple sites by a technique called dielectrophoresis. The mechanical resonance frequencies of the suspended SWCNTs are in the range of 2035 MHz as determined from the piezoresistive response of the resonators during electrostatic actuation. The resistance of the suspended SWCNT either remains unchanged or increases or decreases significantly as a function of the actuation frequency. This can be explained by the effect the nanotube chirality has on the piezoresistive gauge factor.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 6
DOI: 10.1016/j.mee.2012.06.007
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“Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering”. Moors K, Sorée B, Magnus W, Microelectronic engineering 167, 37 (2017). http://doi.org/10.1016/J.MEE.2016.10.015
Abstract: A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. While taking into account the detailed statistical properties of grains, roughness and barrier material as well as the metallic band structure and quantum mechanical aspects of scattering and confinement, the model does not rely on phenomenological fitting parameters. (C) 2016 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 6
DOI: 10.1016/J.MEE.2016.10.015
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“Material relaxation in chalcogenide OTS SELECTOR materials”. Clima S, Garbin D, Devulder W, Keukelier J, Opsomer K, Goux L, Kar GS, Pourtois G, Microelectronic engineering 215, 110996 (2019). http://doi.org/10.1016/J.MEE.2019.110996
Abstract: Nature of the mobility-gap states in amorphous Ge-rich Ge50Se50 was found to be related to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material suffers Ge-Ge bond concentration drift during material ageing, which can explain the observed reliability of the aGe(50)Se(50) selector devices. Strong Ge-N bonds were introduced to alleviate the observed instability.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.806
Times cited: 1
DOI: 10.1016/J.MEE.2019.110996
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“A mass spectrometric study of the dissolution behavior of sanidine”. Adriaens A, Van 't dack L, Adams F, Gijbels R, Microchimica acta 120, 139 (1995). http://doi.org/10.1007/BF01244427
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.741
Times cited: 1
DOI: 10.1007/BF01244427
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“Model-based quantification of EELS: is standardless quantification possible?”.Verbeeck J, Bertoni G, Microchimica acta 161, 439 (2008). http://doi.org/10.1007/s00604-008-0948-7
Abstract: Electron energy loss spectroscopy (EELS) is an ideal tool to obtain chemical information from nanoscale volumes. Quantification of the experimental spectra however has prevented for a long time access to the available information in a reliable and reproducible way. We present recent advances in model-based quantification of EELS spectra and show that we obtain the best possible precision for a given dataset, as well as remarkably good accuracies when applied to three different materials. The results are shown to be far superior over conventional quantification techniques and could hold a promise for standardless quantification of EELS spectra.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.58
Times cited: 5
DOI: 10.1007/s00604-008-0948-7
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