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“Depth profiling of ZrO2/SiO2/Si stacks : a TOF-SIMS and computer simulation study”. Ignatova VA, Conard T, Möller W, Vandervorst W, Gijbels R, Applied surface science 231/232, 603 (2004). http://doi.org/10.1016/j.apsusc.2004.03.121
Abstract: This study is dedicated to a better understanding of the processes occurring under ion bombardment of ultra-thin ZrO2/SiO2/Si gate dielectric stacks. Complex-shaped depth profiles were obtained by using TOF-SIMS with dual beam (500 eV for sputtering and 10 keV for analysis) Ar+ ions. The SIMS intensities of all the elements depend critically on the amount of oxygen at any moment of the sputtering process. Increased intensity is observed at the surface and at the ZrO2/SiO2 interface. A long tail of the Zr signal is present in the Si substrate, even after the second (SiO2/Si) interface, and a double bump structure in the Zr-90 and ZrO dimer is observed, which is more pronounced with increasing thickness of the interfacial SiO2 layer. Computer simulations using the dynamic Monte Carlo code (TRIDYN) are performed in order to distinguish the ion bombardment-induced effects from changes in the ionization degree. The original code is extended with simple models for the ionization mechanism and for the molecular yield during sputtering. Oxygen preferential sputtering at the surface and ballistic transport of Zr towards and through the interface are clearly demonstrated, but there is also evidence that due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. (C) 2004 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.387
Times cited: 4
DOI: 10.1016/j.apsusc.2004.03.121
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“Organic SIMS: the influence of time on the ion yield enhancement by silver and gold deposition”. Adriaensen L, Vangaever F, Gijbels R, Applied surface science 231/232, 256 (2004). http://doi.org/10.1016/j.apsusc.2004.03.031
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.387
Times cited: 10
DOI: 10.1016/j.apsusc.2004.03.031
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“First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors”. Schowalter M, Lamoen D, Kruse P, Gerthsen D, Rosenauer A, Applied Physics Letters 85, 4938 (2004). http://doi.org/10.1063/1.1823598
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.411
Times cited: 16
DOI: 10.1063/1.1823598
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“Formation of metallic In in InGaN/GaN multiquantum wells”. van Daele B, Van Tendeloo G, Jacobs K, Moerman I, Leys M, Applied physics letters 85, 4379 (2004). http://doi.org/10.1063/1.1815054
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 32
DOI: 10.1063/1.1815054
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“Spin-dependent transmission through a chain of rings : influence of a periodically modulated spin-orbit interaction strength or ring radius”. Molnar B, Vasilopoulos P, Peeters FM, Applied physics letters 85, 612 (2004). http://doi.org/10.1063/1.1775283
Abstract: We study ballistic electron transport through a finite chain of quantum circular rings in the presence of spin-orbit interaction of strength alpha. For a single ring, the transmission and reflection coefficients are obtained analytically and from them the conductance for a chain of rings as a function of alpha and of the wave vector k of the incident electron. We show that due to destructive spin interferences, the chain can be totally opaque for certain ranges of k, the width of which depends on the value of alpha. A periodic modulation of the strength alpha or of the ring radius widens the gaps considerably and produces a nearly binary conductance output. (C) 2004 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 26
DOI: 10.1063/1.1775283
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“A TEM study of nanoparticles in lustre glazes”. Fredrickx P, Helary D, Schryvers D, Darque-Ceretti E, Applied physics A : materials science &, processing 79, 283 (2004). http://doi.org/10.1007/s00339-004-2515-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.455
Times cited: 16
DOI: 10.1007/s00339-004-2515-3
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Kirschhock CEA, Liang D, Aerts A, Aerts CA, Kremer SPB, Jacobs PA, Van Tendeloo G, Martens JA (2004) On the TEM and AFM evidence of zeosil nanoslabs present during the synthesis of silicalite-1 : reply. Weinheim, 4562–4564
Keywords: L1 Letter to the editor; Electron microscopy for materials research (EMAT)
Impact Factor: 11.994
DOI: 10.1002/anie.200460541
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“Atomic spectroscopy”. Bings NH, Bogaerts A, Broekaert JAC, Analytical chemistry 76, 3313 (2004). http://doi.org/10.1021/ac040052x
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 6.32
Times cited: 32
DOI: 10.1021/ac040052x
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“Metal-assisted secondary ion mass spectrometry: the influence of Ag and Au deposition on molecular ion yields”. Adriaensen L, Vangaever F, Gijbels R, Analytical chemistry 76, 6777 (2004). http://doi.org/10.1021/ac049108d
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 6.32
Times cited: 67
DOI: 10.1021/ac049108d
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“Statistical experimental design for quantitative atomic resolution transmission electron microscopy”. Van Aert S, den Dekker AJ, van den Bos A, van Dyck D Academic Press, San Diego, Calif., page 1 (2004).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 13
DOI: 10.1016/S1076-5670(04)30001-7
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“Ab initio approach to superexchange interactions in alkali doped fullerides AC60”. Nikolaev AV, Michel KH, AIP conference proceedings
T2 –, 18th International Winterschool/Euroconference on Electronic Properties, of Novel Materials, MAR 06-JUN 13, 2004, Kirchberg, AUSTRIA , 393 (2004). http://doi.org/10.1063/1.1812115
Abstract: The superexchange interactions between the fullerenes arise as a result of the electron transfer from the C-60 molecule to the alkali atom and back. We present a scheme, which is a configuration interaction approach based on the valence bond (Heitler-London) method. The effect of superexchange is described together with chemical bonding by constructing and solving a secular equation, rather than by using a perturbation treatment. We have considered 180degrees and 90degrees superexchange for the C-60 Cs-C-60 pathways. The calculations account for unusual electronic properties of polymer orthorhombic and quenched cubic phases of CsC60: two lines in nuclear magnetic resonance experiments, the development of a spin-singlet ground state and a decrease of magnetic susceptibility as T-->0.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
DOI: 10.1063/1.1812115
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“The classical electron gas in artificial structures”. Peeters FM, Partoens B, Kong M, , 235 (2004)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications”. Lubyshev D, Fastenau JM, Fang X-M, Wu Y, Doss C, Snyder A, Liu WK, Lamb MSM, Bals S, Song C, Journal of vacuum science &, technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena 22, 1565 (2004). http://doi.org/10.1116/1.1691412
Abstract: Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 25
DOI: 10.1116/1.1691412
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“The dawn of surface analysis that stands by the side users: ultra-thin film analysis by rf-GDOES”. Shimizu K, Habazaki H, Bender H, Gijbels R, Engineering materials 52, 97 (2004)
Keywords: A3 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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Blumenau AT, Frauenheim T, Ö,berg S, Willems B, Van Tendeloo G (2004) Dislocation structures in diamond: density-functional based modelling and high resolution electron microscopy. Trans Tech Publications, s.l
Keywords: MA1 Book as author; Electron microscopy for materials research (EMAT)
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“High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers”. Germain M, Leys M, Boeykens S, Degroote S, Wang W, Schreurs D, Ruythooren W, Choi K-H, van Daele B, Van Tendeloo G, Borghs G, Materials Research Society symposium proceedings 798, Y10.22 (2004)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“High precision determination of the elastic strain of InGaN/GaN multiple quantum wells”. Wu MF, Zhou S, Yao S, Zhao Q, Vantomme A, van Daele B, Piscopiello E, Van Tendeloo G, Tong YZ, Yang ZJ, Yu TJ, Zhang GY, Journal of vacuum science and technology: B: microelectronics and nanometer structures 22, 920 (2004). http://doi.org/10.1116/1.1715085
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1116/1.1715085
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“Hole band engineering in self-assembled quantum dots and molecules”. Peeters FM, Tadić M, Janssens KL, Partoens B s.l., page 191 (2004).
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
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“Ionization density in hydrocarbon flames: numerical modelling”. Migoun A, Cenian A, Chernukho A, Bogaerts A, Gijbels R, Leys C, , 130 (2004)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Langmuir probe diagnostic of high pressure plasmas: study by PIC-MC modelling”. Cenian A, Chernukho A, Bogaerts A, Gijbels R, Leys C, , 61 (2004)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Modelleren van plasmas gebruikt voor de afzetting van dunne lagen”. Herrebout D, Bogaerts A, Gijbels R, Chemie magazine , 34 (2004)
Keywords: A2 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Modelling of formation and transport of nanoparticles in silane discharges”. de Bleecker K, Bogaerts A, Goedheer WJ, Gijbels R, , 0 (2004)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Organische TOF-S-SIMS: gebruik van opgedampt Ag en Au voor de verhoging van secundaire ionenintensiteiten”. Adriaensen L, Vangaever F, Gijbels R, Chemie magazine , 10 (2004)
Keywords: A2 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Orientational charge density waves and the metal-insulator transition in polymerized KC60”. Verberck B, Nikolaev AV, Michel KH, AIP conference proceedings 723, 339 (2004)
Abstract: Polymerized KC60 undergoes a structural phase transition accompanied by a metal-insulator transition around 50 K. To explain the structural aspect, a mechanism involving small orientational deviations of the valence electron density on every C-60 monomer orientational charge density waves (OCDWs) – has already been proposed earlier. In the present work, we address the metal-insulator transition using the OCDW concept. We are inspired by the analogy between a polymer chain exhibiting an OCDW and a linear atomic chain undergoing a static lattice deformation doubling the unit cell: such a deformation implies a band gap at the zone boundary, yielding an insulating state (Peierls instability). Within our view, a similar mechanism occurs in polymerized KC60; the OCDW plays the role of the lattice deformation. We present tight-binding band structure calculations and conclude that the metal-insulator transition can indeed be explained using OCDWs, but that the threedimensionality of the crystal plays an unexpected key role.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
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“Parametric study by means of numerical modelling for a dielectric barrier discharge at atmospheric pressure in nitrogen”. Madani M, Bogaerts A, Gijbels R, Vangeneugden D, , 49 (2004)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Vortex-antivortex ionic crystals in superconducting films with magnetic pinning arays”. Milošević, MV, Peeters FM, Physicalia magazine 26, 355 (2004)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
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“An interactive curvature based rigid-body image registartion technique: an application of EFTEM”. Leemans A, Sijbers J, van den Broek W, Yang Z, (2004)
Keywords: P3 Proceeding; Vision lab; Electron microscopy for materials research (EMAT)
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“A compact μ-XRF spectrometer for (in-situ) analyses of cultural heritage and forensic materials”. Vittiglio G, Bichlmeier S, Klinger P, Heckel J, Fuzhong W, Vincze L, Janssens K, Engström P, Rindby A, Dietrich K, Jembrih-Simbürger D, Schreiner M, Denis D, Lakdar A, Lamotte A, Nuclear instruments and methods in physics research B 213, 693 (2004)
Keywords: A3 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Cultural heritage research in “The Micro and Trace Analysis Center&rdquo, of the University of Antwerp”. Godoi RHM, Kontozova V, Godoi AFL, Bencs L, Spolnik Z, Janssens K, Van Grieken R, Coalition 7, 11 (2004)
Keywords: A3 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Introduction and overview”. Janssens K, Van Grieken R page 1 (2004).
Keywords: H3 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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