Abstract: For column structures, such as fee-based alloys viewed along the cube direction, the concept of electron channelling through the atom columns is more and more used to interpret the corresponding HREM images. In the case of(partially) disordered columns, the projected potential approach which is used in the channelling description must be questioned since the arrangement of the atoms along the beam direction might affect the exit wave of the electrons. In this paper, we critically inspect this top-bottom effect using multi-slice calculations. A modified channelling theory is introduced which turns out to be very appropriate for the interpretation of these results. For substitutionally disordered column structures, it is also discussed how to link the chemical composition of the material to statistical data of the HREM image. This results in a convenient tool to discern images taken at different thicknesses and focus values.

Abstract: By means of electron diffraction the 2 root 2 a(p) x 2 root 2 a(p) phase, well-known in YBa2Cu3O7-delta was observed in two other perovskite-based materials (Y0.75Ce0.25)(2)(Sr0.85Y0.15)(2)AlCU2O9 and Bi1.8Pb0.4Sr2Ca2Cu3O10+x. Highly correlated ordering is observed in the ab-plane, the correlation along the c-direction being weak. The plane group of the superstructure symmetry elements was determined on the basis of observed reflection conditions in diffraction patterns. Our results unambiguously rule out oxygen ordering as a possible origin of the superstructure. Experimental evidence points out that the superstructure is associated with the CuO2 layers, that are the only structural elements common to the three compounds studied. A model is proposed where the CuO2 sheet is displacively modulated. Experimental evidence suggests a correlation between adjacent CuO2 sheets. Comparison of simulated and experimental [001] zone diffraction patterns strongly supports our model.

Abstract: Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level.

Abstract: Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment.