“First-principles characterization of amorphous carbon nitride systems: structural and electronic properties”. Titantah JT, Lamoen D, Physica status solidi: A: applied research 203, 3191 (2006). http://doi.org/10.1002/pssa.200671107
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 3
DOI: 10.1002/pssa.200671107
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“Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study”. Mortet V, Zhang L, Eckert M, D'Haen J, Soltani A, Moreau M, Troadec D, Neyts E, De Jaeger JC, Verbeeck J, Bogaerts A, Van Tendeloo G, Haenen K, Wagner P, Physica status solidi : A : applications and materials science 209, 1675 (2012). http://doi.org/10.1002/pssa.201200581
Abstract: In this work, a detailed structural and spectroscopic study of nanocrystalline diamond (NCD) thin films grown by a continuous bias assisted CVD growth technique is reported. This technique allows the tuning of grain size and phase purity in the deposited material. The crystalline properties of the films are characterized by SEM, TEM, EELS, and Raman spectroscopy. A clear improvement of the crystalline structure of the nanograined diamond film is observed for low negative bias voltages, while high bias voltages lead to thin films consisting of diamond grains of only ∼10 nm nanometer in size, showing remarkable similarities with so-called ultrananocrystalline diamond. These layers arecharacterized by an increasing amount of sp2-bonded carbon content of the matrix in which the diamond grains are embedded. Classical molecular dynamics simulations support the observed experimental data, giving insight in the underlying mechanism for the observed increase in deposition rate with bias voltage. Furthermore, a high atomic concentration of hydrogen has been determined in these films. Finally, Raman scattering analyses confirm that the Raman line observed at ∼1150 cm−1 cannot be attributed to trans-poly-acetylene, which continues to be reported in literature, reassigning it to a deformation mode of CHx bonds in NCD.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.775
Times cited: 31
DOI: 10.1002/pssa.201200581
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“Ground state of excitons and charged excitons in a quantum well”. Riva C, Peeters FM, Varga K, Physica status solidi: A: applied research
T2 –, 6th International Conference on Optics of Excitons in Confined Systems, (OECS-6), AUG 30-SEP 02, 1999, ASCONA, SWITZERLAND 178, 513 (2000). http://doi.org/10.1002/1521-396X(200003)178:1<513::AID-PSSA513>3.0.CO;2-1
Abstract: A variational calculation of the ground state of a neutral exciton and of positively and negatively charged excitons (trions) in a single quantum well is presented. We study the dependence of the correlation energy and of the binding energy on the well width and on the hole mass. Our results are compared with previous theoretical results and with available experimental data.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Times cited: 16
DOI: 10.1002/1521-396X(200003)178:1<513::AID-PSSA513>3.0.CO;2-1
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“Growth of R1+xBa2-xCu3O7-\delta epitaxial films investigated by in situ scanning tunneling microscopy”. Salluzzo M, Aruta C, Maggio-Aprile I, Fischer Ø, Bals S, Zegenhagen J, Physica status solidi: A: applied research 186, 339 (2001). http://doi.org/10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
Abstract: The problem of the epitaxial growth of the high temperature superconducting R1+xBa2xCu3O7δ (R = Y or rare earth except Ce and Tb) films has been addressed. Using in situ ultra high vacuum Scanning Tunneling Microscopy (UHV-STM) we have studied the role of cationic substitution and substrate mismatch on the growth mode of stoichiometric and Nd-rich Nd1+xBa2xCu3O7δ thin films. The results are compared to the growth of Y1Ba2Cu3O7δ, Dy1Ba2Cu3O7δ and Gd1Ba2Cu3O7δ epitaxial films. Two main phenomena are investigated: a) the first stage of the direct nucleation on the substrate and b) the crossover between 2D and 3D growth upon increasing the film thickness. At the first stage of the growth, pseudo-cubic perovskite (Re,Ba)CuO3 nuclei are formed. While they disappear after the growth of a few nm in stoichiometric films, they persist on the surface of Nd-rich films of up to 110 nm thickness. Stoichiometric R1+xBa2xCu3O7δ films exhibit a rough morphology with increasing thickness due to island growth mode, whereas Nd-rich films remain smooth and continue to grow layer by layer. It is proposed that linear defects (like anti-phase boundaries), which are formed due to the misalignment of growth fronts, are the source of screw dislocations in stoichiometric films. In Nd-rich films, linear defects are eliminated through the insertion of (Nd,Ba)CuO3 extra layers without introduction of any screw dislocations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 17
DOI: 10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
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“HRTEM studies of dislocations in cubic BN”. Nistor LC, Van Tendeloo G, Dincã, G, Physica status solidi: A: applied research 201, 2578 (2004). http://doi.org/10.1002/pssa.200405192
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 8
DOI: 10.1002/pssa.200405192
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“Magneto-exciton in single and coupled type II quantum dots”. Janssens KL, Partoens B, Peeters FM, Physica status solidi: A: applied research 190, 571 (2002). http://doi.org/10.1002/1521-396X(200204)190:2<571::AID-PSSA571>3.0.CO;2-K
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
DOI: 10.1002/1521-396X(200204)190:2<571::AID-PSSA571>3.0.CO;2-K
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“Morphological TEM studies and magnetoresistance analysis of sputtered Al-substituted ZnO films : the role of oxygen”. Van Gompel M, Atalay AY, Gaulke A, Van Bael MK, D'Haen J, Turner S, Van Tendeloo G, Vanacken J, Moshchalkov VV, Wagner P, Physica status solidi : A : applications and materials science 212, 1191 (2015). http://doi.org/10.1002/pssa.201431888
Abstract: In this article, we report on the synthesis of thin, epitaxial films of the transparent conductive oxide Al:ZnO on (0001)-oriented synthetic sapphire substrates by DC sputtering from targets with a nominal 1 at.% Al substitution. The deposition was carried out at an unusually low substrate temperature of only 250 °C in argonoxygen mixtures as well as in pure argon. The impact of the processgas composition on the morphology was analysed by transmission electron microscopy, revealing epitaxial growth in all the cases with a minor impact of the process parameters on the resulting grain sizes. The transport properties resistivity, Hall effect and magnetoresistance were studied in the range from 10 to 300 K in DC and pulsed magnetic fields up to 45 T. While the carrier density and mobility are widely temperature independent, we identified a low fieldlow temperature regime in which the magnetoresistance shows an anomalous, negative behaviour. At higher fields and temperatures, the magnetoresistance exhibits a more conventional, positive curvature with increasing field strength. As a possible explanation, we propose carrier scattering at localised magnetic trace impurities and magnetic correlations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
DOI: 10.1002/pssa.201431888
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“Oxygen and fluorine doping in Sr2MnGaO5 brownmillerite”. Antipov EV, Abakumov AM, Alekseeva AM, Rozova MG, Hadermann J, Lebedev OI, Van Tendeloo G, Physica status solidi: A: applied research 201, 1403 (2004). http://doi.org/10.1002/pssa.200304428
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 9
DOI: 10.1002/pssa.200304428
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“Strain mapping around dislocations in diamond and cBN”. Willems B, Nistor L, Ghica C, Van Tendeloo G, Physica status solidi: A: applied research 202, 2224 (2005). http://doi.org/10.1002/pssa.200561923
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 4
DOI: 10.1002/pssa.200561923
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“Structural aspects of CVD idamond wafers grown at different hydrogen flow rates”. Nistor L, van Landuyt J, Ralchenko V, Physica status solidi: A: applied research 171, 5 (1999). http://doi.org/10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
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“Study on the giant positive magnetoresistance and Hall effect in ultrathin graphite flakes”. Vansweevelt R, Mortet V, D' Haen J, Ruttens bart, van Haesendonck C, Partoens B, Peeters FM, Wagner P, Physica status solidi : A : applications and materials science 208, 1252 (2011). http://doi.org/10.1002/pssa.201001206
Abstract: In this paper, we report on the electronic transport properties of mesoscopic, ultrathin graphite flakes with a thickness corresponding to a stack of 150 graphene layers. The graphite flakes show an unexpectedly strong positive magnetoresistance (PMR) already at room temperature, which scales in good approximation with the square of the magnetic field. Furthermore, we show that the resistivity is unaffected by magnetic fields oriented in plane with the graphene layers. Hall effect measurements indicate that the charge carriers are p-type and their concentration increases with increasing temperature while the mobility is decreasing. The Hall voltage is non-linear in higher magnetic fields. Possible origins of the observed effects are discussed. Ball and stick model of the two topmost carbon layers of the hexagonal graphite structure.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.775
Times cited: 8
DOI: 10.1002/pssa.201001206
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“A technique for the sp2/sp3 characterization of carbon materials”. Titantah JT, Lamoen D, Physica status solidi: A: applied research 201, 2492 (2004). http://doi.org/10.1002/pssa.200405176
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1002/pssa.200405176
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“TEM study on precipitation behavior in Cu-Co alloys”. Takeda M, Suzuki N, Shinohara G, Endo T, van Landuyt J, Physica status solidi: A: applied research 168, 27 (1998). http://doi.org/10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 18
DOI: 10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
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“Why does polycrystalline natural diamond turn black after annealing?”.Willems B, de Corte K, Van Tendeloo G, Physica status solidi: A: applied research 201, 2486 (2004). http://doi.org/10.1002/pssa.200405178
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 10
DOI: 10.1002/pssa.200405178
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“The effect of molecular structure of organic compound on the direct high-pressure synthesis of boron-doped nanodiamond: Effect of organic compound on synthesis of boron-doped nanodiamond”. Ekimov EA, Kudryavtsev OS, Turner S, Korneychuk S, Sirotinkin VP, Dolenko TA, Vervald AM, Vlasov II, Physica status solidi : A : applications and materials science 213, 2582 (2016). http://doi.org/10.1002/pssa.201600181
Abstract: Evolution of crystalline phases with temperature has been studied in materials produced by high-pressure high-temperature treatment of 9-borabicyclo[3.3.1]nonane dimer (9BBN), triphenylborane and trimesitylborane. The boron-doped diamond nanoparticles with a size below 10 nm were obtained at 8–9 GPa and temperatures 970–1250 °C from 9BBN only. Bridged structure and the presence of boron atom in the carbon cycle of 9BBN were revealed to be a key point for the direct synthesis of doped diamond nanocrystals. The diffusional transformation of the disordered carbon phase is suggested to be the main mechanism of the nanodiamond formation from 9BBN in the temperature range of 970–1400 °C. Aqueous suspensions of primary boron-doped diamond nanocrystals were prepared upon removal of non-diamond phases that opens wide opportunities for application of this new nanomaterial in electronics and biotechnologies.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 8
DOI: 10.1002/pssa.201600181
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“Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering”. Jalabert D, Pelloux-Gervais D, Béché, A, Hartmann JM, Gergaud P, Rouvière JL, Canut B, Physica Status Solidi A-Applications And Materials Science 209, 265 (2012). http://doi.org/10.1002/PSSA.201127502
Abstract: The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub-nanometer resolution and high strain sensitivity that the thin Si cap presents residual compressive strain caused by Ge diffusion coming from the fully strained SiGe layer underneath. The strain state of the SiGe buffer have been checked by X-ray diffraction (XRD) and nano-beam electron diffraction (NBED) measurements.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 3
DOI: 10.1002/PSSA.201127502
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Sankaran KJ, Hoang DQ, Srinivasu K, Korneychuk S, Turner S, Drijkoningen S, Pobedinskas P, Verbeeck J, Leou KC, Lin IN, Haenen K, Physica status solidi : A : applications and materials science 213, 2654 (2016). http://doi.org/10.1002/PSSA.201600233
Abstract: Utilization of Au and nanocrystalline diamond ( NCD) as interlayers noticeably modifies the microstructure and field electron emission ( FEE) properties of hexagonal boron nitride nanowalls ( hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3V mu m(-1), attaining FEE current density of 2.58mAcm(-2) and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride ( aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 5
DOI: 10.1002/PSSA.201600233
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“Oxygen vacancies effects in a-IGZO : formation mechanisms, hysteresis, and negative bias stress effects”. de de Meux AJ, Bhoolokam A, Pourtois G, Genoe J, Heremans P, Physica status solidi : A : applications and materials science 214, 1600889 (2017). http://doi.org/10.1002/PSSA.201600889
Abstract: The amorphous oxide semiconductor Indium-Gallium-Zinc-Oxide (a-IGZO) has gained a large technological relevance as a semiconductor for thin-film transistors in active-matrix displays. Yet, major questions remain unanswered regarding the atomic origin of threshold voltage control, doping level, hysteresis, negative bias stress (NBS), and negative bias illumination stress (NBIS). We undertake a systematic study of the effects of oxygen vacancies on the properties of a-IGZO by relating experimental observations to microscopic insights gained from first-principle simulations. It is found that the amorphous nature of the semiconductor allows unusually large atomic relaxations. In some cases, oxygen vacancies are found to behave as perfect shallow donors without the formation of structural defects. Once structural defects are formed, their transition states can vary upon charge and discharge cycles. We associate this phenomenon to a possible presence of hysteresis in the transfer curve of the devices. Under NBS, the creation of oxygen vacancies becomes energetically very stable, hence thermodynamically very likely. This generation process is correlated with the occurrence of the negative bias stress instabilities observed in a-IGZO transistors. While oxygen vacancies can therefore be related to NBS and hysteresis, it appears unlikely from our results that they are direct causes of NBIS, contrary to common belief.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.775
Times cited: 8
DOI: 10.1002/PSSA.201600889
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“Surface passivation of CIGS solar cells using gallium oxide”. Garud S, Gampa N, Allen TG, Kotipalli R, Flandre D, Batuk M, Hadermann J, Meuris M, Poortmans J, Smets A, Vermang B, Physica status solidi : A : applications and materials science 215, 1700826 (2018). http://doi.org/10.1002/PSSA.201700826
Abstract: This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 8
DOI: 10.1002/PSSA.201700826
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“Measurement of the Indirect Band Gap of Diamond with EELS in STEM”. Korneychuk S, Guzzinati G, Verbeeck J, Physica status solidi : A : applications and materials science 215, 1800318 (2018). http://doi.org/10.1002/pssa.201800318
Abstract: In this work, a simple method to measure the indirect band gap of diamond with electron energy loss spectroscopy (EELS) in transmission electron microscopy (TEM) is showed. The authors discuss the momentum space resolution achievable with EELS and the possibility of deliberately selecting specific transitions of interest. Based on a simple 2 parabolic band model of the band structure, the authors extend our predictions from the direct band gap case discussed in previous work, to the case of an indirect band gap. Finally, the authors point out the emerging possibility to partly reconstruct the band structure with EELS exploiting our simplified model of inelastic scattering and support it with experiments on diamond.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 6
DOI: 10.1002/pssa.201800318
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“Angular momentum transitions and magnetic evaporation in off-center D- centers in quantum well”. Riva C, Schweigert VA, Peeters FM, Physica status solidi: B: basic research 210, 599 (1998). http://doi.org/10.1002/(SICI)1521-3951(199812)210:2<599::AID-PSSB599>3.0.CO;2-M
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.674
Times cited: 1
DOI: 10.1002/(SICI)1521-3951(199812)210:2<599::AID-PSSB599>3.0.CO;2-M
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“Anisotropic packing of C-70 molecules in carbon nanotubes”. Verberck B, Michel KH, Physica status solidi B-basic solid state physics 244, 4279 (2007). http://doi.org/10.1002/pssb.200776144
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.674
DOI: 10.1002/pssb.200776144
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“Binding energy and structure of localized biexcitons in quantum wells”. Riva C, Varga K, Schweigert VA, Peeters FM, Physica status solidi: B: basic research 210, 689 (1998). http://doi.org/10.1002/(SICI)1521-3951(199812)210:2<689::AID-PSSB689>3.0.CO;2-M
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.674
Times cited: 12
DOI: 10.1002/(SICI)1521-3951(199812)210:2<689::AID-PSSB689>3.0.CO;2-M
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“Bipolaron stability in an ellipsoidal potential well”. Pokatilov EP, Croitoru MD, Fomin VM, Devreese JT, Physica status solidi: B: basic research 237, 244 (2003). http://doi.org/10.1002/pssb.200301785
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 7
DOI: 10.1002/pssb.200301785
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“Carrier transport in nanodevices: revisiting the Boltzmann and Wigner distribution functions”. Brosens F, Magnus W, Physica status solidi: B: basic research 246, 1656 (2009). http://doi.org/10.1002/pssb.200844424
Abstract: In principle, transport of charged carriers in nanometer sized solid-state devices can be fully characterized once the non-equilibrium distribution function describing the carrier ensemble is known. In this light, we have revisited the Boltzmann and the Wigner distribution functions and the framework in which they emerge from the classical respectively quantum mechanical Liouville equation. We have assessed the method of the characteristic curves as a potential workhorse to solve the time dependent Boltzmann equation for carriers propagating through spatially non-uniform systems, such as nanodevices. In order to validate the proposed solution strategy, we numerically solve the Boltzmann equation for a one-dimensional conductor mimicking the basic features of a biased low-dimensional transistor operating in the on-state. Finally, we propose a computational scheme capable of extending the benefits of the above mentioned solution strategy when it comes to solve the Wigner-Liouville equation.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.674
Times cited: 8
DOI: 10.1002/pssb.200844424
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“Coherent nonlinear optical response of excitons and biexcitons in quantum dots coupled to phonons”. Krugel A, Axt VM, Kuhn T, Vagov A, Peeters FM, Physica status solidi B –, basic solid state physics 243, 2241 (2006). http://doi.org/10.1002/pssb.200668034
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.674
Times cited: 1
DOI: 10.1002/pssb.200668034
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“Comment on “Tunable spin-injection and magnetoconductance in a novel 2DEG-ferromagnet structure&rdquo, [phys. stat. sol. (b) 235, No. 1, 157-161 (2003)]”. Papp G, Peeters FM, Physica status solidi: B: basic research 241, 222 (2004). http://doi.org/10.1002/pssb.200301941
Abstract: We point out that the predicted strong spin-injection effect by Jiang and Jalil [phys. stat. sol. (b) 235, 157 (2003)] for a double magnetic barrier structure is based on a wrong calculation of the transmission probability. We corrected the result and found no significant spin-injection.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.674
Times cited: 11
DOI: 10.1002/pssb.200301941
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“Correlation energy and configuration of biexcitons in quantum wells”. Riva C, Peeters FM, Varga K, Schweigert VA, Physica status solidi: B: basic research 234, 50 (2002). http://doi.org/10.1002/1521-3951(200211)234:1<50::AID-PSSB50>3.0.CO;2-R
Abstract: A calculation of the energy of a biexciton in a GaAs/AlGaAs quantum wen is presented. We compare the results obtained using two different techniques. We discuss the dependence of the biexciton correlation energy and binding energy on the electron/hole mass ratio and on the well width. The structure of the biexciton is also investigated.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.674
Times cited: 6
DOI: 10.1002/1521-3951(200211)234:1<50::AID-PSSB50>3.0.CO;2-R
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“Correlation of microstructure and magnetotransport properties of epitaxially grown La-Ca-Mn-O3 thin films”. Habermeier HU, Razavi F, Lebedev O, Gross GM, Praus R, Zhang PX, Physica status solidi: B: basic research
T2 –, International Conference on Solid State Spectroscopy –, (ICSSS), SEP 05-07, 1999, SCHWABISCH-GMUND, GERMANY 215, 679 (1999). http://doi.org/10.1002/(SICI)1521-3951(199909)215:1<679::AID-PSSB679>3.0.CO;2-H
Abstract: We have investigated epitaxially grown single-crystalline Ca-doped LaMnO3 thin films using the pulsed laser deposition technique in a case study aimed to explore the possibilities buried in epitaxial stress tailoring in order to control the transport properties of CMR materials beyond the limits set by equilibrium thermodynamics. Depending on the film thickness there is an abrupt transition from pseudomorphic to epitaxial granular growth observable which is related to the epitaxial strain of the films. This is associated with microscopic stress relaxation and leads to well controllable modifications of the atomic arrangements of the Mn-O sublattice in the films. Due to the interrelation of double exchange, spin-, charge- and orbital ordering and the Jahn-Teller effect mediated coupling of the electronic system to the crystal lattice, the magnetotransport properties of the firms can be modified in a controllable way.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 3
DOI: 10.1002/(SICI)1521-3951(199909)215:1<679::AID-PSSB679>3.0.CO;2-H
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“Electron effective mass and resonant polaron effect in CdTe/CdMgTe quantum wells”. Karczewski G, Wojtowicz T, Wang Y-J, Wu X, Peeters FM, Physica status solidi: B: basic research
T2 –, 10th International Conference on II-VI Compounds, SEP 09-14, 2001, BREMEN, GERMANY 229, 597 (2002). http://doi.org/10.1002/1521-3951(200201)229:1<597::AID-PSSB597>3.0.CO;2-P
Abstract: Cyclotron resonance in CdTe/CdMgTe quantum wells (QWs) was studied. Due to the polaron effect the zero-field effective mass is strongly influenced by the QW width. The experimental data have been described theoretically by taking into account electron-phonon coupling and the nonparabolicity of the conduction band. The subband structure was calculated self-consistently. The best fit was obtained for an electron-phonon coupling constant alpha = 0.3 and bare electron mass of m(b) = 0.092m(0).
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.674
Times cited: 10
DOI: 10.1002/1521-3951(200201)229:1<597::AID-PSSB597>3.0.CO;2-P
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