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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. |
Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope |
1996 |
Materials Research Society symposium proceedings |
404 |
1 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J. |
Ordering and defects in BanTaxTiyO3n ternary oxides |
1994 |
Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences |
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UA library record; WoS full record; |
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Van Tendeloo, G.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Verheijen, M.A.; van Loosdrecht, P.H.M.; Meijer, G. |
Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy |
1992 |
Journal of physical chemistry |
96 |
33 |
UA library record; WoS full record; WoS citing articles |
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Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope |
1995 |
Materials science and technology |
11 |
7 |
UA library record; WoS full record; WoS citing articles |
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De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; Mommaert, C.; Severne, G. |
Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy |
1993 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
67 |
1 |
UA library record; https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993; WoS full record; WoS citing articles |
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Bernaerts, D.; Amelinckx, S.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J. |
Structural aspects of carbon nanotubes |
1995 |
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UA library record |
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Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R. |
A temperature study of mixed AgBr-AgBrI tabular crystals |
1995 |
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3 |
UA library record; WoS full record; WoS citing articles |
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Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R. |
A temperature study of mixed AgBr-AgBrI tabular crystals |
1992 |
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UA library record |
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Zhang, Z.; Geng, W.; van Landuyt, J.; Van Tendeloo, G. |
A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals |
1995 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
71 |
7 |
UA library record; WoS full record; WoS citing articles |
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Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
2001 |
Institute of physics conference series |
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UA library record; WoS full record; |
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van Landuyt, J.; Van Tendeloo, G. |
Charcaterization by high-resolution transmission electron microscopy |
1998 |
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UA library record; WoS full record; |
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De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy |
2002 |
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UA library record; WoS full record; |
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Schryvers, D.; Goessens, C.; van Renterghem, W.; van Landuyt, J.; de Keyzer, R. |
Conventional and HREM study of structural defects in nanostructured silver halides |
1998 |
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UA library record |
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Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. |
Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study |
2000 |
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UA library record; WoS full record; |
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van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
Defect related growth of tabular AgCl(100) crystals: a TEM study |
1998 |
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UA library record; WoS full record; |
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van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. |
Defects in AgCl and AgBr(100) tabular crystals studied by TEM |
1998 |
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UA library record |
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Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
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UA library record; WoS full record; |
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Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. |
Electron microscopy: principles and fundamentals |
1997 |
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UA library record |
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Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. |
Handbook of microscopy: applications in materials science, solid-state physics and chemistry |
1997 |
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UA library record |
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Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. |
High resolution TEM observation of in situ colloid formation in CaF2 crystals |
1997 |
Materials science forum |
239-241 |
3 |
UA library record; WoS full record; WoS citing articles |
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van Landuyt, J.; Van Tendeloo, G. |
HREM for characterisation of nanoscale microstructures |
1998 |
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UA library record |
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Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
HREM investigation of a Fe/GaN/Fe tunnel junction |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
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UA library record; WoS full record; |
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Nistor, L.C.; van Landuyt, J.; Dincã, G. |
HREM of defects in cubic boron nitride single crystals |
1998 |
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UA library record; WoS full record; |
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Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J. |
In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure |
1997 |
Conference series of the Institute of Physics |
157 |
1 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation |
1997 |
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UA library record |
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Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. |
Laser thermotreatment of the SnO2layers |
1998 |
Eurosensors XII, vols 1 and 2 |
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UA library record; WoS full record; |
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van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J. |
Microscopy of gemmological materials |
1997 |
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4 |
UA library record; WoS full record; WoS citing articles |
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Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
Morphology and defects in shallow trench isolation structures |
1999 |
Conference series of the Institute of Physics |
164 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
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Takeda, M.; Shinohara, G.; Yamada, H.; Yoshida, S.; van Landuyt, J.; Hashimoto, H. |
Precipitation behavior in Cu-Co alloy |
1998 |
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UA library record |
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