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“Catalyst traces after chemical purification in CVD grown carbon nanotubes”. Biró, LP, Khanh NQ, Horváth ZE, Vértesy Z, Kocsonya A, Konya Z, Osváth Z, Koós A, Guylai J, Zhang XB, Van Tendeloo G, Fonseca A, Nagy JB, , 183 (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation”. Stuer C, Steegen A, van Landuyt J, Bender H, Maex K, Institute of physics conference series , 481 (2001)
Abstract: With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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d' Hondt H (2011) Characterization of anion deficient perovskites. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
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Kirilenko D (2012) Characterization of graphene by electron diffraction. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
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Wiktor C (2014) Characterization of metal-organic frameworks and other porous materials via advanced transmission electron microscopy. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
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“Characterization of MO derived nanostructured titania powders”. Ahonen PP, Kauppinen EI, Tapper U, Nenonen P, Joubert JC, Deschanvres JL, Van Tendeloo G, Electron microscopy: vol. 2 , 373 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition”. Mortet V, Zhang L, Echert M, Soltani A, d' Haen J, Douheret O, Moreau M, Osswald S, Neyts E, Troadec D, Wagner P, Bogaerts A, Van Tendeloo G, Haenen K, Materials Research Society symposium proceedings (2009). http://doi.org/10.1557/PROC-1203-J05-03
Abstract: Nanocrystalline diamond films have generated much interested due to their diamond-like properties and low surface roughness. Several techniques have been used to obtain a high re-nucleation rate, such as hydrogen poor or high methane concentration plasmas. In this work, the properties of nano-diamond films grown on silicon substrates using a continuous DC bias voltage during the complete duration of growth are studied. Subsequently, the layers were characterised by several morphological, structural and optical techniques. Besides a thorough investigation of the surface structure, using SEM and AFM, special attention was paid to the bulk structure of the films. The application of FTIR, XRD, multi wavelength Raman spectroscopy, TEM and EELS yielded a detailed insight in important properties such as the amount of crystallinity, the hydrogen content and grain size. Although these films are smooth, they are under a considerable compressive stress. FTIR spectroscopy points to a high hydrogen content in the films, while Raman and EELS indicate a high concentration of sp2 carbon. TEM and EELS show that these films consist of diamond nano-grains mixed with an amorphous sp2 bonded carbon, these results are consistent with the XRD and UV Raman spectroscopy data.
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1557/PROC-1203-J05-03
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Leroux F (2012) Characterization of soft-hard matter composite materials by advanced transmission electron microscopy. Universiteit Antwerpen, EMAT, Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
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“Charcaterization by high-resolution transmission electron microscopy”. van Landuyt J, Van Tendeloo G Stt, Den Haag, page 187 (1998).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Charge ordering and phase transitions in perovskite manganites: correlation with CMR properties”. Hervieu M, Martin C, Van Tendeloo G, Mercey B, Maignan A, Jirak Z, Raveau B s.l., page 179 (2000).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy”. De Gryse O, Clauws P, Vanhellemont J, Lebedev O, van Landuyt J, Simoen E, Claeys C, , 183 (2002)
Abstract: Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications”. Lubyshev D, Fastenau JM, Fang X-M, Wu Y, Doss C, Snyder A, Liu WK, Lamb MSM, Bals S, Song C, Journal of vacuum science &, technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena 22, 1565 (2004). http://doi.org/10.1116/1.1691412
Abstract: Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 25
DOI: 10.1116/1.1691412
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“Conventional and HREM study of structural defects in nanostructured silver halides”. Schryvers D, Goessens C, van Renterghem W, van Landuyt J, de Keyzer R, , 1 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Crystal growth studies during aerosol synthesis of nanostructured fullerene particles”. Joutsensaari J, Kauppinen EI, Bernaerts D, Van Tendeloo G, Materials Research Society symposium proceedings 520, 63 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
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“The crystal structure of YSr2Cu3O6+x determined by HREM”. Lebedev O, Van Tendeloo G, Marezio M, Licci F, Gilioli E, Gauzzi A, Prodi A s.l., page 877 (2002).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Crystal structure of the group of optical materials Ln2MeGe4O12 (Me = Ca, Mn)”. Tarakina NV, Zubkov VG, Leonidov II, Tyutunnik AP, Surat LL, Hadermann J, Van Tendeloo G, Zeitschrift für Kristallographie , 401 (2009). http://doi.org/10.1524/zksu.2009.0059
Abstract: The crystal structure of the group of optical materials Ln2MeGe4O12, Ln = Eu, Gd, Dy-Lu, Y; Me = Ca, Mn and of the solid solution (Y1-xErx)2CaGe4O12 (x = 0 – 1), promising materials for photonics, has been studied in detail. The crystal structure of all compounds exhibit two alternating layers: one formed by Ln and Me atoms and another by cyclic [Ge4O12]8- anions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
DOI: 10.1524/zksu.2009.0059
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“Crystalline and amorphous frameworks with giant pores: what information ca we expect from advanced TEM?”.Lebedev OI, Van Tendeloo G, Electron microscopy and multiscale modeling: proceedings of the AIP conference proceedings 999, 245 (2008)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Crystallization of fullerene nanopraticles in an aerosol flow reactor”. Joutsensaari J, Ahonen PP, Tapper U, Kauppinen EI, Pauwels B, Amelinckx S, Van Tendeloo G, (1999)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“DART explained: how to carry out a discrete tomography reconstruction”. Batenburg KJ, Bals S, Sijbers J, Van Tendeloo G, , 295 (2008)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Vision lab
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“Decomposition phenomena in Ni-Mn-Ti austenite”. Schryvers D, Seo JW, Richard O, Vermeulen W, Potapov P s.l., page 887 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study”. Van Renterghem W, Schryvers D, van Landuyt J, Bollen D, Van Roost C, De Keyzer RB, , 38 (2000)
Abstract: Defects in AgG tabular crystals with {111} surfaces are characterised by transmission electron microscopy (TEM) and their influence on the growth process is discussed. In the tabular crystals, twins parallel to the tabular face as well as dislocations along different directions are observed. The twins induce the tabular growth, while the dislocations do not influence the morphology. In 10 to 30% of the crystals that have been characterised, thickness growth is observed and it is shown that in all cases twins on other planes than the tabular ones are present. Two configurations occur more frequently and are analysed in detail. For the first group, twins parallel to the tabular face as well as a microtwin along a non-parallel {111} plane and ending inside the crystal are present. In the crystals of the second group only one extra non-parallel twin occurs giving rise to a bicrystal built up by a tetrahedral shaped part and a flat triangular or trapezoidal part. More complex twin configurations give rise to various, less characteristic morphologies.
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
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“Defect related growth of tabular AgCl(100) crystals: a TEM study”. van Renterghem W, Schryvers D, van Landuyt J, van Roost C, , 389 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Defects in AgCl and AgBr(100) tabular crystals studied by TEM”. van Renterghem W, Goessens C, Schryvers D, van Landuyt J, Verrept P, Bollen D, van Roost C, de Keyzer R, , 6 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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Blumenau AT, Frauenheim T, Ö,berg S, Willems B, Van Tendeloo G (2004) Dislocation structures in diamond: density-functional based modelling and high resolution electron microscopy. Trans Tech Publications, s.l
Keywords: MA1 Book as author; Electron microscopy for materials research (EMAT)
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“Do smaller probes in a scanning transmission electron microscope result in more precise measurement of the distances between atom columns?”.Van Aert S, van Dyck D, Philosophical magazine: B: physics of condensed matter: electronic, optical and magnetic properties 81, 1833 (2001). http://doi.org/10.1080/13642810108223121
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 11
DOI: 10.1080/13642810108223121
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“Dynamic shear localization in Ti6Al4V”. Peirs J, Verleysen P, Tirry W, Rabet L, Schryvers D, Degrieck J, Procedia Engineering
T2 –, 11th International Conference on the Mechanical Behavior of Materials, (ICM), 2011, Como, ITALY (ICM11) , 1 (2011). http://doi.org/10.1016/j.proeng.2011.04.386
Abstract: The alloy Ti6Al4V is known to be prone to the formation of adiabatic shear bands when dynamically loaded in shear. This causes a catastrophic decrease of the load carrying capacity and is usually followed by fracture. Although, the main mechanism is recognized to be the competition between strain hardening and thermal softening, a detailed understanding of the role of microstructural plasticity mechanisms and macroscopic loading conditions does not exist yet. To study strain localization and shear fracture, different high strain rate shear tests have been carried out: compression of hat-shaped specimens, torsion of thin walled tubular specimens and in-plane shear tests. The value of the three techniques in studying shear localization is evaluated. Post-mortem analysis of the fracture surface and the materials' microstructure is performed with optical and electron microscopy. In all cases a ductile fracture is observed. SEM and TEM techniques are used to study the local microstructure and composition in the shear band and as such the driving mechanism for the ASB formation. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of ICM11
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 4
DOI: 10.1016/j.proeng.2011.04.386
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“Effect of annealing on the transformation behavior and mechanical properties of two nanostructured Ti-50.8at.%Ni thin wires produced by different methods”. Wang X, Amin-Ahmadi B, Schryvers D, Verlinden B, Van Humbeeck J, Materials science forum 738/739, 306 (2013). http://doi.org/10.4028/www.scientific.net/MSF.738-739.306
Abstract: A Ti-50.8at.%Ni wire produced using a co-drawing method and a commercial Ti-50.8at.%Ni wire were annealed at different temperatures between 450°C and 700°C. Grains with diameter less than 100nm were revealed by transmission electron microscopy for both wires before annealing treatment. However, the microstructural heterogeneity of the co-drawn wire is more obvious than that of the commercial wire. Multi-stage martensitic transformation was observed in the co-drawn wire, compared with the one-stage A↔M transformation in the commercial wire after annealing at 600°C for 30min. The differences of total elongation, plateau strain and pseudoelastic recoverable strain between the commercial wire and the co-drawn wire were also observed. The differences of the transformation behavior and mechanical properties between the commercial wire and the co-drawn wire are attributed to the microstructural difference between these two wires.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 5
DOI: 10.4028/www.scientific.net/MSF.738-739.306
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“Effect of temperature on the 002 electron structure factor and its consequence for the quantification of ternary and quaternary III-V crystals”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Springer proceedings in physics 120, 189 (2008)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“EFTEM study of plasma etched low-k Si-O-C dielectrics”. Hens S, Bender H, Donaton RA, Maex K, Vanhaelemeersch S, van Landuyt J, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND , 415 (2001)
Abstract: Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Electron diffraction and microscopy of single-walled carbon nanotube bundles”. Colomer J-F, Van Tendeloo G Kluwer, Boston, Mass., page 45 (2003).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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