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“HREM of defects in cubic boron nitride single crystals”. Nistor LC, van Landuyt J, Dincã, G, , 695 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“HREM for characterisation of nanoscale microstructures”. van Landuyt J, Van Tendeloo G, , 15 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Defects in AgCl and AgBr(100) tabular crystals studied by TEM”. van Renterghem W, Goessens C, Schryvers D, van Landuyt J, Verrept P, Bollen D, van Roost C, de Keyzer R, , 6 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Defect related growth of tabular AgCl(100) crystals: a TEM study”. van Renterghem W, Schryvers D, van Landuyt J, van Roost C, , 389 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Conventional and HREM study of structural defects in nanostructured silver halides”. Schryvers D, Goessens C, van Renterghem W, van Landuyt J, de Keyzer R, , 1 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Charcaterization by high-resolution transmission electron microscopy”. van Landuyt J, Van Tendeloo G Stt, Den Haag, page 187 (1998).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Electron microscopy of carbon nanotubes and related structures”. Bernaerts D, Amelinckx S, Van Tendeloo G, van Landuyt J, The journal of physics and chemistry of solids 58, 1807 (1997). http://doi.org/10.1016/S0022-3697(98)80003-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.059
Times cited: 12
DOI: 10.1016/S0022-3697(98)80003-6
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“LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas”. Volkov VV, van Landuyt J, Marushkin K, Gijbels R, Férauge C, Vasilyev MG, Shelyakin AA, Sokolovsky AA, Sensors and actuators : A : physical 62, 624 (1997). http://doi.org/10.1016/S0924-4247(97)01377-0
Abstract: Highly effective IR light-emitting diodes operating at the wavelength 1.66 mu m and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/ In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM),electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CK, gas sensor has been developed and fabricated an the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested, It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2 x 1 km. (C) 1997 Elsevier Science S.A.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.499
Times cited: 3
DOI: 10.1016/S0924-4247(97)01377-0
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“Defect characterization in high temperature implanted 6H-SiC using TEM”. Suvorov AV, Lebedev OI, Suvorova AA, van Landuyt J, Usov IO, Nuclear instruments and methods in physics research: B 127/128, 347 (1997). http://doi.org/10.1016/S0168-583X(96)00954-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.109
Times cited: 17
DOI: 10.1016/S0168-583X(96)00954-8
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“TEM studies of processed Si device materials”. Vanhellemont J, Bender H, van Landuyt J, Conference series of the Institute of Physics 157, 393 (1997)
Abstract: Recent developments in the field of TEM characterisation of Si device materials are discussed and illustrated by a few case studies of material in different stages of various kinds of processing. Important challenges are the ever decreasing defect densities and device feature sizes. Defect delineation techniques using large area inspection tools yielding accurate coordinates of the defects to be studied have therefore become an essential part of the TEM analysis procedure. The possibility to transfer these defect coordinates without loss of accuracy to tools for local TEM specimen preparation is also a conditio sine qua non for a successful analysis. Insitu TEM remains important as dynamic processes can be observed and analysed under well defined experimental conditions. As case studies illustrating new developments, results are presented on defects in as-grown Ct silicon, on in-situ studies in processed silicon, on problem sites in advanced integrated circuit structures and on assessment of localised strain fields in the nm size scale.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Structural studies of nanocrystalline diamond thin films”. Nistor LC, van Landuyt J, Ralchenko VG, Obratzova ED, Korothushenko KG, Smolin AA, Materials science forum 239-241, 115 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views”. Goessens C, Schryvers D, van Landuyt J, de Keyzer R, The journal of imaging science and technology 41, 301 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
Times cited: 1
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“New intermediate defect configuration in Si studied by in situ HREM irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Conference series of the Institute of Physics 157, 43 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization”. Nistor LC, van Landuyt J, Ralchenko VG, Obratzova ED, Smolin AA, Diamond and related materials 6, 159 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 116
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“Microstructure of Mn-doped, spin-cast FeSi2”. Morimura T, Frangis N, Van Tendeloo G, van Landuyt J, Hasaka M, Hisatsune K, Journal of electron microscopy 46, 221 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 3
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“Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1”. Bernaerts D, Amelinckx S, Van Tendeloo G, van Landuyt J, Journal of crystal growth 172, 433 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 23
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“Microscopy of gemmological materials”. van Landuyt J, van Bockstael MHG, van Royen J Vch, Weinheim, page 293 (1997).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
Times cited: 4
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“Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J Kluwer Academic, s.l., page 63 (1997).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Conference series of the Institute of Physics 157, 55 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
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“HREM image analysis up to structure determination of SbCrSe3: a new 1D ferromagnet”. Volkov VV, Van Tendeloo G, van Landuyt J, Amelinckx S, Busheva EE, Shabunina GG, Aminov TG, Novotortsev VM, Journal of solid state chemistry 132, 257 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 1
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“High resolution TEM observation of in situ colloid formation in CaF2 crystals”. Teodorescu VS, Nistor LC, van Landuyt J, Materials science forum 239-241, 671 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 3
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Amelinckx S, van Dyck D, van Landuyt J, Van Tendeloo G (1997) Handbook of microscopy: applications in materials science, solid-state physics and chemistry. Vch, Weinheim
Keywords: ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab
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“Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction”. Frangis N, van Landuyt J, Kaltsas G, Travlos A, Nassiopoulos AG, Journal of crystal growth 172, 175 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 29
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“The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study”. Frangis N, Stoemenos J, van Landuyt J, Nejim A, Hemment PLF, Journal of crystal growth 181, 218 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 9
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Amelinckx S, van Dyck D, van Landuyt J, Van Tendeloo G (1997) Electron microscopy: principles and fundamentals. Vch, Weinheim
Keywords: ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab
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“Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals”. Goessens C, Schryvers D, van Landuyt J, de Keyzer R, Journal of crystal growth 172, 426 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 15
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“Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging”. Chen JH, van Dyck D, op de Beeck M, van Landuyt J, Ultramicroscopy 69, 219 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 11
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“Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas”. Volkov VV, van Landuyt J, Marushkin KM, Gijbels R, Férauge C, Vasilyev MG, Shelyakin AA, Sokolovsky AA, Journal of crystal growth 173, 285 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.751
Times cited: 4
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“The chirality of carbon nanotubules determined by dark-field electron microscopy”. Bernaerts D, op de Beeck M, Amelinckx S, van Landuyt J, Van Tendeloo G, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 74, 723 (1996). http://doi.org/10.1080/01418619608243538
Abstract: Multishell carbon nanotubules are studied by means of diffraction contrast dark field images. This results in an electron microscopy method for the determination of the sign of the chiral angles in carbon nanotubes. The method is justified by a reasoning either in direct space or in diffraction space. We also investigate a carbon nanotubule exhibiting a bend and we confront the observations with the heptagon-pentagon pair model.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 20
DOI: 10.1080/01418619608243538
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“The study of a crater forming on the surface of a Ti target submitted to multipulse excimer laser irradiation under low pressure N2”. Teodorescu VS, Mihailescu IN, Gyorgy E, Luches A, Martino M, Nistor LC, van Landuyt J, Hermann J, Journal of modern optics 43, 1773 (1996). http://doi.org/10.1080/095003496154815
Abstract: A Ti target was submitted to laser ablation in low ambient pressure N-2. Electron microscopy examination of the cross-section of the crater zone forming on the Ti target, and XPS analyses, indicate that there is a small effect on the nitridation processes taking place on and in the vicinity of the target. The studies show a zone influenced by the multipulse laser treatment extending beneath the crater down to a depth of the same order of magnitude as the crater depth (i.e. similar to 10 mu m). In this zone, TiN could be identified as being present only in traces, while the whole zone exhibited a layer structure with differences in morphology and mechanical wear.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.008
Times cited: 11
DOI: 10.1080/095003496154815
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