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“Role of Nd/Ba substitution on the growth mode and on the structural properties of Nd-rich Re1(NdxBa2-x)Cu3O7-\delta (Re=Nd, Y) thin films”. Salluzzo M, Aruta C, Ausanio G, Bals S, d' Agostino A, Maglione MG, Physica: C : superconductivity 372-376, 675 (2002). http://doi.org/10.1016/S0921-4534(02)00828-6
Abstract: Thin films of the superconducting Nd1+xBa2−xCu3O7−δ (NBCO) and Y1(NdxBa2−x)Cu3O7−δ (YNBCO) compounds have been deposited by dc magnetron sputtering and diode high pressure oxygen sputtering. Different techniques, including scanning tunneling microscopy, atomic force microscopy, X-ray diffraction and transmission electron microscopy (TEM) have been used to study the film microstructures and the surface morphology. It is shown that the Nd/Ba exchange promotes a 2D heteroepitaxial growth in the case of the NBCO films deposited on (1 0 0) SrTiO3 substrates, with a suppression of the characteristic 3D spirals structures. On the contrary in YNBCO the Nd/Ba exchange does not provide a driving force for the suppression of screw-dislocations, since spirals or towers originated by screw and half loop dislocations are observed on the surface. TEM reveals that anti-phase boundaries are eliminated during the growth of NBCO films thanks to the Nd/Ba exchange while this mechanism is not operating in the case of YNBCO films.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 5
DOI: 10.1016/S0921-4534(02)00828-6
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“Optimisation of superconducting thin films by TEM”. Bals S, Van Tendeloo G, Rijnders G, Blank DHA, Leca V, Salluzzo M, Physica: C : superconductivity 372/376, 711 (2002). http://doi.org/10.1016/S0921-4534(02)00838-9
Abstract: High-resolution electron microscopy is used to study the initial growth of different REBa2CU3O7-5 thin films. In DyBa2CU3O7-5 ultra-thin films, deposited on TiO2 terminated SrTiO3, two different types of interface arrangements occur: bulk-SrO-TiO2-BaO-CuO-BaO-CuO2-Dy-CuO2-BaO-bulk and bulk-SrO-TiO2-BaO-CuO2-Dy-CuO2-BaO-CuO-BaO-bulk. This variable growth sequence is the origin of the presence of antiphase boundaries. In Nd1+xBa2-xCu3O7-5 thin films, antiphase boundaries tend to annihilate by the insertion of extra Nd-layers. This annihilation is correlated with the flat morphology of the film and the absence of growth spirals at the surface of the Nd-rich films. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 6
DOI: 10.1016/S0921-4534(02)00838-9
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“Growth of R1+xBa2-xCu3O7-\delta epitaxial films investigated by in situ scanning tunneling microscopy”. Salluzzo M, Aruta C, Maggio-Aprile I, Fischer Ø, Bals S, Zegenhagen J, Physica status solidi: A: applied research 186, 339 (2001). http://doi.org/10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
Abstract: The problem of the epitaxial growth of the high temperature superconducting R1+xBa2xCu3O7δ (R = Y or rare earth except Ce and Tb) films has been addressed. Using in situ ultra high vacuum Scanning Tunneling Microscopy (UHV-STM) we have studied the role of cationic substitution and substrate mismatch on the growth mode of stoichiometric and Nd-rich Nd1+xBa2xCu3O7δ thin films. The results are compared to the growth of Y1Ba2Cu3O7δ, Dy1Ba2Cu3O7δ and Gd1Ba2Cu3O7δ epitaxial films. Two main phenomena are investigated: a) the first stage of the direct nucleation on the substrate and b) the crossover between 2D and 3D growth upon increasing the film thickness. At the first stage of the growth, pseudo-cubic perovskite (Re,Ba)CuO3 nuclei are formed. While they disappear after the growth of a few nm in stoichiometric films, they persist on the surface of Nd-rich films of up to 110 nm thickness. Stoichiometric R1+xBa2xCu3O7δ films exhibit a rough morphology with increasing thickness due to island growth mode, whereas Nd-rich films remain smooth and continue to grow layer by layer. It is proposed that linear defects (like anti-phase boundaries), which are formed due to the misalignment of growth fronts, are the source of screw dislocations in stoichiometric films. In Nd-rich films, linear defects are eliminated through the insertion of (Nd,Ba)CuO3 extra layers without introduction of any screw dislocations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 17
DOI: 10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
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“Why are sputter deposited Nd1+xBa2-xCu3O7-\delta thin films flatter than NdBa2Cu3O7-\delta films?”.Bals S, Van Tendeloo G, Salluzzo M, Maggio-Aprile I, Applied physics letters 79, 3660 (2001). http://doi.org/10.1063/1.1421622
Abstract: High-resolution electron microscopy and scanning tunneling microscopy have been used to compare the microstructure of NdBa2Cu3O7-delta and Nd1+xBa2-xCu3O7-delta thin films. Both films contain comparable amounts of Nd2CuO4 inclusions. Antiphase boundaries are induced by unit cell high steps at the substrate or by a different interface stacking. In Nd1+xBa2-xCu3O7-delta the antiphase boundaries tend to annihilate by the insertion of extra Nd layers. Stacking faults, which can be characterized as local Nd2Ba2Cu4O9 inclusions, also absorb the excess Nd. A correlation is made between the excess Nd and the absence of growth spirals at the surface of the Nd-rich films. (C) 2001 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 13
DOI: 10.1063/1.1421622
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