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Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors”. Vereecke G, De Coster H, Van Alphen S, Carolan P, Bender H, Willems K, Ragnarsson L-A, Van Dorpe P, Horiguchi N, Holsteyns F, Microelectronic engineering 200, 56 (2018). http://doi.org/10.1016/J.MEE.2018.09.004
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