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Author Title Year (down) Publication Volume Times cited Additional Links
Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L. Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy 2012 Applied Physics Letters 112 14 UA library record; WoS full record; WoS citing articles
Cooper, D.; Le Royer, C.; Béché, A.; Rouvière, J.-L. Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy 2012 Applied Physics Letters 100 UA library record; WoS full record; WoS citing articles