| Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
| Tinck, S.; Boullart, W.; Bogaerts, A. |
Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching : effects of SiO2 chamber wall coating |
2011 |
Plasma sources science and technology |
20 |
22 |
UA library record; WoS full record; WoS citing articles |
| Tinck, S.; Boullart, W.; Bogaerts, A. |
Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasmasurface simulations and experiments |
2009 |
Journal of physics: D: applied physics |
42 |
23 |
UA library record; WoS full record; WoS citing articles |
| Tinck, S.; Boullart, W.; Bogaerts, A. |
Simulation of an Ar/Cl2 inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments |
2008 |
Journal of physics: D: applied physics |
41 |
31 |
UA library record; WoS full record; WoS citing articles |
| Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
2001 |
Materials science in semiconductor processing |
4 |
|
UA library record; WoS full record |
