| Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
| Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.; |
Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors |
2006 |
Applied physics letters |
89 |
15 |
UA library record; WoS full record; WoS citing articles |
| van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M. |
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN |
2005 |
Springer proceedings in physics |
107 |
|
UA library record; WoS full record; |
