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“Ultrascaled graphene-capped interconnects : a quantum mechanical study”. Reyntjens P, Van de Put M, Vandenberghe WG, Sorée B, Proceedings of the IEEE ... International Interconnect Technology Conference
T2 –, IEEE International Interconnect Technology Conference (IITC) / IEEE, Materials for Advanced Metallization Conference (MAM), MAY 22-25, 2023, Dresden, Germany , 1 (2023). http://doi.org/10.1109/IITC/MAM57687.2023.10154656
Abstract: In this theoretical study, we assess the impact of a graphene capping layer on the resistivity of defective, extremely scaled interconnects. We investigate the effect of graphene capping on the electronic transport in ultrascaled interconnects, in the presence of grain boundary defects in the metal layer. We compare the results obtained using our quantum mechanical model to a simple parallel-conductor model and find that the parallel-conductor model does not capture the effect of the graphene cap correctly. At 0.5 nm metal thickness, the parallel-conductor model underestimates the conductivity by 3.0% to 4.0% for single-sided and double sided graphene capping, respectively.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
DOI: 10.1109/IITC/MAM57687.2023.10154656
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