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“Shallow donor near a semiconductor surface in the presence of locally spherical scanning tunneling microscope tip”. Djotyan AP, Avetisyan AA, Hao YL, Peeters FM, Proceedings of the Society of Photo-optical Instrumentation Engineers
T2 –, Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA , 84140 (2012). http://doi.org/10.1117/12.923562
Abstract: We developed a variational approach to investigate the ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of scanning tunneling microscope (STM) metallic tip. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The behavior of the ground state energy when the tip approaches the semiconductor surface is investigated.
Keywords: P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
DOI: 10.1117/12.923562
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