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“Analysis of internal stress build-up during deposition of nanocrystalline Ni thin films using transmission electron microscopy”. Lumbeeck G, Delvaux A, Idrissi H, Proost J, Schryvers D, Thin solid films : an international journal on the science and technology of thin and thick films 707, 138076 (2020). http://doi.org/10.1016/j.tsf.2020.138076
Abstract: Ni thin films sputter-deposited at room temperature with varying Ar pressures were investigated with automated crystal orientation mapping in a transmission electron microscope to uncover the mechanisms controlling the internal stress build-up recorded in-situ during deposition. Large grains were found to induce behaviour similar to a stress-free nucleation layer. The measurements of grain size in most of the Ni thin films are in agreement with the island coalescence model. Low internal stress was observed at low Ar pressure and was explained by the presence of large grains. Relaxation of high internal stress was also noticed at the highest Ar pressure, which was attributed to a decrease of Σ3 twin boundary density due to a low deposition rate. The results provide insightful information to better understand the relationship between structural boundaries and the evolution of internal stress upon deposition of thin films.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.1016/j.tsf.2020.138076
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“Visible light activation of room temperature NO2 gas sensors based on ZnO, SnO2 and In2O3 sensitized with CdSe quantum dots”. Chizhov AS, Rumyantseva MN, Vasiliev RB, Filatova DG, Drozdov KA, Krylov IV, Marchevsky AV, Karakulina OM, Abakumov AM, Gaskov AM, Thin solid films : an international journal on the science and technology of thin and thick films 618, 253 (2016). http://doi.org/10.1016/j.tsf.2016.09.029
Abstract: This work reports the analysis of visible light activation of room temperature NO2 gas sensitivity of metal oxide semiconductors (MOS): blank and CdSe quantum dots (QDs) sensitized nanocrystallinematrixes ZnO, SnO2 and In2O3. Nanocrystalline metal oxides (MOx) ZnO, SnO2, In2O3 were synthesized by the precipitation method. Colloidal CdSe QDs were obtained by high temperature colloidal synthesis. Sensitization was effectuated by direct adsorption of CdSe QDs stabilized with oleic acid on MOx surface. The role of illumination consists in generation of electrons, which can be transferred into MOx conduction band, and holes that can recombine with the electrons previously trapped by the chemisorbed acceptor species and thus activate desorption of analyte molecules. Under green light illumination for blank SnO2 and In2O3 matrixes the indirect consequential mechanism for the generation of holes is proposed. Anothermechanismis realized in the presence of CdSe QDs. In this case the electron-hole pair is generated in the CdSe quantum dot. Sensor measurements demonstrated that synthesizedmaterials can be used for NO2 detection under visible (green) light illumination at room temperature without any thermal heating.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 19
DOI: 10.1016/j.tsf.2016.09.029
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“Optical and photoelectrical properties of nanocrystalline indium oxide with small grains”. Forsh EA, Abakumov AM, Zaytsev VB, Konstantinova EA, Forsh PA, Rumyantseva MN, Gaskov AM, Kashkarov PK, Thin solid films : an international journal on the science and technology of thin and thick films 595, 25 (2015). http://doi.org/10.1016/j.tsf.2015.10.053
Abstract: Optical properties, spectral dependence of photoconductivity and photoconductivity decay in nanocrystalline indium oxide In2O3 are studied. A number of nanostructured In2O3 samples with various nanocrystals size are prepared by sol-gel method and characterized using various techniques. The mean nanocrystals size varies from 7 to 8 nm to 39-41 nm depending on the preparation conditions. Structural characterization of the In2O3 samples is performed by means of transmission electron microscopy and X-ray powder diffraction. The combined analysis of ultraviolet-visible absorption spectroscopy and diffuse reflectance spectroscopy shows that nanostructuring leads to the change in optical band gap: optical band gap of the In2O3 samples (with an average nanocrystal size from 7 to 41 nm) is equal to 2.8 eV. We find out the correlation between spectral dependence of photoconductivity and optical properties of nanocrystalline In2O3: sharp increase in photoconductivity was observed to begin at 2.8 eV that is equal to the optical bandgap in the In2O3 samples, and reached its maximum at 3.2-3.3 eV. The combined analysis of the slow photoconductivity decay in air, vacuum and argon, that was accurately fitted by a stretched-exponential function, and electron paramagnetic resonance (EPR) measurements shows that the kinetics of photoconductivity decay is strongly depended on the presence of oxygen molecules in the ambient of In2O3 nanocrystals. There is the quantitative correlation between EPR and photoconductivity data. Based on the obtained data we propose the model clearing up the phenomenon of permanent photoconductivity decay in nanocrystalline In2O3. (C) 2015 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 18
DOI: 10.1016/j.tsf.2015.10.053
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“Effect of the burn-out step on the microstructure of the solution-processed Cu(In,Ga)Se2 solar cells”. Batuk M, Buffiere M, Zaghi AE, Lenaers N, Verbist C, Khelifi S, Vleugels J, Meuris M, Hadermann J, Thin solid films : an international journal on the science and technology of thin and thick films 583, 142 (2015). http://doi.org/10.1016/j.tsf.2015.03.063
Abstract: For the development of the photovoltaic industry cheap methods for the synthesis of Cu(In,Ga)Se-2 (CIGSe) based solar cells are required. In this work, CIGSe thin films were obtained by a solution-based method using oxygen-bearing derivatives. With the aimof improving the morphology of the printed CIGSe layers, we investigated two different annealing conditions of the precursor layer, consisting of (1) a direct selenization step (reference process), and (2) a pre-treatment thermal step prior to the selenization. We showed that the use of an Air/H2S burn-out step prior to the selenization step increases the CIGSe grain size and reduces the carbon content. However, it leads to the reduction of the solar cell efficiency from 4.5% in the reference sample down to 0.5% in the annealed sample. Detailed transmission electron microscopy analysis, including high angle annular dark field scanning transmission electron microscopy and energy dispersive X-ray mapping, was applied to characterize the microstructure of the film and to determine the relationship between microstructure and the solar cell performance. We demonstrated that the relatively low efficiency of the reference solar cells is related not only to the nanosize of the CIGSe grains and presence of the pores in the CIGSe layer, but also to the high amount of secondary phases, namely, In/Ga oxide (or hydroxide) amorphous matter, residuals of organicmatter (carbon), and copper sulfide that is formed at the CIGSe/MoSe2 interface. The annealing in H2S during the burn-out step leads to the formation of the copper sulfide at all grain boundaries and surfaces in the CIGSe layer, which results in the noticeably efficiency drop. (C) 2015 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 5
DOI: 10.1016/j.tsf.2015.03.063
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“Thermal conductivity of titanium nitride/titanium aluminum nitride multilayer coatings deposited by lateral rotating cathode arc”. Samani MK, Ding XZ, Khosravian N, Amin-Ahmadi B, Yi Y, Chen G, Neyts EC, Bogaerts A, Tay BK, Thin solid films : an international journal on the science and technology of thin and thick films 578, 133 (2015). http://doi.org/10.1016/j.tsf.2015.02.032
Abstract: A seriesof [TiN/TiAlN]nmultilayer coatingswith different bilayer numbers n=5, 10, 25, 50, and 100 were deposited on stainless steel substrate AISI 304 by a lateral rotating cathode arc technique in a flowing nitrogen atmosphere. The composition and microstructure of the coatings have been analyzed by using energy dispersive X-ray spectroscopy, X-ray diffraction (XRD), and conventional and high-resolution transmission electron microscopy (HRTEM). XRD analysis shows that the preferential orientation growth along the (111) direction is reduced in the multilayer coatings. TEM analysis reveals that the grain size of the coatings decreases with increasing bilayer number. HRTEMimaging of the multilayer coatings shows a high density misfit dislocation between the TiN and TiAlN layers. The cross-plane thermal conductivity of the coatings was measured by a pulsed photothermal reflectance technique. With increasing bilayer number, the multilayer coatings' thermal conductivity decreases gradually. This reduction of thermal conductivity can be ascribed to increased phonon scattering due to the disruption of columnar structure, reduced preferential orientation, decreased grain size of the coatings and present misfit dislocations at the interfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.879
Times cited: 41
DOI: 10.1016/j.tsf.2015.02.032
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“Physical and electrical characterization of high-performance Cu2ZnSnSe4 based thin film solar cells”. Oueslati S, Brammertz G, Buffiere M, ElAnzeery H, Touayar O, Koeble C, Bekaert J, Meuris M, Poortmans J, Thin solid films : an international journal on the science and technology of thin and thick films 582, 224 (2015). http://doi.org/10.1016/j.tsf.2014.10.052
Abstract: We report on the electrical, optical and physical properties of Cu2ZnSnSe4 solar cells using an absorber layer fabricated by selenization of sputtered Cu, Zn and Cu10Sn90 multilayers. A maximum active-area conversion efficiency of 10.4% under AM1.5G was measured with a maximum short circuit current density of 39.7 mA/cm(2), an open circuit voltage of 394 mV and a fill factor of 66.4%. We perform electrical and optical characterization using photoluminescence spectroscopy, external quantum efficiency, current-voltage and admittance versus temperature measurements in order to derive information about possible causes for the low open circuit voltage values observed. The main defects derived from these measurements are strong potential fluctuations in the absorber layer as well as a potential barrier of the order of 133 meV at the back side contact. (C) 2014 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.879
Times cited: 49
DOI: 10.1016/j.tsf.2014.10.052
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“Effect of selenium content of CuInSex alloy nanopowder precursors on recrystallization of printed CuInSe2 absorber layers during selenization heat treatment”. E Zaghi A, Buffière M, Koo J, Brammertz G, Batuk M, Verbist C, Hadermann J, Kim WK, Meuris M, Poortmans J, Vleugels J;, Thin solid films : an international journal on the science and technology of thin and thick films , 1 (2014). http://doi.org/10.1016/j.tsf.2014.10.003
Abstract: Polycrystalline CuInSe2 semiconductors are efficient light absorber materials for thin film solar cell technology, whereas printing is one of the promising low cost and non-vacuum approaches for the fabrication of thin film solar cells. The printed precursors are transformed into a dense polycrystalline CuInSe2 semiconductor film via thermal treatment in ambient selenium atmosphere (selenization). In this study, the effect of the selenium content in high purity mechanically synthesized CuInSex (x = 2, 1.5, 1 or 0.5) alloy precursors on the recrystallization of the CuInSe2 phase during the selenization process was investigated. The nanostructure and phase variation of CuInSex nanopowders were investigated by different characterization techniques. The recrystallization process of the 12 μm thick CuInSex coatings into the CuInSe2 phase during selenization in selenium vapor was investigated via in-situ high temperature X-ray diffraction. The CuInSex precursors with lower selenium content showed a more pronounced phase conversion into CuInSe2 compared to the higher selenium content CuInSex precursors. Moreover, the CuInSex (x = 0.5 and 1) precursor resulted in a denser polycrystalline CuInSe2 semiconductor film with larger crystals. This could be attributed to a more intensive atomic interdiffusion within the CuInSex precursor system compared to a CuInSe2 phase precursor, and the formation of intermediate CuSe and CuSe2 fluxing phases during selenization.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 7
DOI: 10.1016/j.tsf.2014.10.003
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“Effect of deposition rate on the microstructure of electron beam evaporated nanocrystalline palladium thin films”. Amin-Ahmadi B, Idrissi H, Galceran M, Colla MS, Raskin JP, Pardoen T, Godet S, Schryvers D, Thin solid films : an international journal on the science and technology of thin and thick films 539, 145 (2013). http://doi.org/10.1016/j.tsf.2013.05.083
Abstract: The influence of the deposition rate on the formation of growth twins in nanocrystalline Pd films deposited by electron beam evaporation is investigated using transmission electron microscopy. Statistical measurements prove that twin boundary (TB) density and volume fraction of grains containing twins increase with increasing deposition rate. A clear increase of the dislocation density was observed for the highest deposition rate of 5 Å/s, caused by the increase of the internal stress building up during deposition. Based on crystallographic orientation indexation using transmission electron microscopy, it can be concluded that a {111} crystallographic texture increases with increasing deposition rate even though the {101} crystallographic texture remains dominant. Most of the TBs are fully coherent without any residual dislocations. However, for the highest deposition rate (5 Å/s), the coherency of the TBs decreases significantly as a result of the interaction of lattice dislocations emitted during deposition with the growth TBs. The analysis of the grain boundary character of different Pd films shows that an increasing fraction of high angle grain boundaries with misorientation angles around 5565° leads to a higher potential for twin formation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 13
DOI: 10.1016/j.tsf.2013.05.083
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“The influence of Cr and Y on the micro structural evolution of Mg―Cr―O and Mg―Y―O thin films”. Jehanathan N, Georgieva V, Saraiva M, Depla D, Bogaerts A, Van Tendeloo G, Thin solid films : an international journal on the science and technology of thin and thick films 519, 5388 (2011). http://doi.org/10.1016/j.tsf.2011.02.050
Abstract: The compositional influence of Cr and Y on the microstructure of Mg―Cr―O, and Mg―Y―O films synthesized by reactive magnetron sputtering has been investigated by transmission electron microscopy, X-ray diffraction and molecular dynamics simulations. A decrease in crystallinity is observed in these films as the M (Cr or Y) content is increased. It is found that M forms a solid solution with MgO for metal ratios up to ~ 70% and ~ 50% for Cr and Y respectively. Above ~ 70% Cr metal ratio the Mg―Cr―O films are found to be completely amorphous. The Mg―Y―O films are composed of Mg(Y)O and Y2O3 nano crystallites, up to ~ 50% Y metal ratio. Above this ratio, only Y2O3 nano crystallites are found. The preferential < 111> MgO grain alignment is strongly affected by the increase in M content. For M metal ratios up to ~ 50%, there is a selective promotion of the < 100> MgO grain alignments and a decline in the < 111> grain alignments.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 4
DOI: 10.1016/j.tsf.2011.02.050
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“Metal-decorated multi-wall carbon nanotubes for low temperature gas sensing”. Espinosa EH, Lonescu R, Bittencourt C, Felten A, Erni R, Van Tendeloo G, Pireaux J-J, Llobet E, Thin solid films : an international journal on the science and technology of thin and thick films 515, 8322 (2007). http://doi.org/10.1016/j.tsf.2007.03.017
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 86
DOI: 10.1016/j.tsf.2007.03.017
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“Growth of La2Mo2O9 films on porous Al2O3 substrates by radio frequency magnetron sputtering”. Laffez P, Chen XY, Banerjee G, Pezeril T, Rossell MD, Van Tendeloo G, Lacorre P, Liu JM, Liu Z-G, Thin solid films : an international journal on the science and technology of thin and thick films 500, 27 (2006). http://doi.org/10.1016/j.tsf.2005.10.062
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 15
DOI: 10.1016/j.tsf.2005.10.062
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“Influence of the Ar/O2 ratio on the growth and biaxial alignment of yttria stabilized zirconia layers during reactive unbalanced magnetron sputtering”. Mahieu S, Ghekiere P, de Winter G, Depla D, de Gryse R, Lebedev OI, Van Tendeloo G, Thin solid films : an international journal on the science and technology of thin and thick films 484, 18 (2005). http://doi.org/10.1016/j.tsf.2005.01.021
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 23
DOI: 10.1016/j.tsf.2005.01.021
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“XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers”. Conard T, de Witte H, Loo R, Verheyen P, Vandervorst W, Caymax M, Gijbels R, Thin solid films : an international journal on the science and technology of thin and thick films 343/344, 583 (1999). http://doi.org/10.1016/S0040-6090(99)00122-4
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.879
Times cited: 1
DOI: 10.1016/S0040-6090(99)00122-4
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“TEM study of B2 + L12 decomposition in a nanoscale Ni-rich Ni-Al film”. Schryvers D, Yandouzi M, Toth L, Thin solid films : an international journal on the science and technology of thin and thick films 326, 126 (1998). http://doi.org/10.1016/S0040-6090(98)00545-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 1
DOI: 10.1016/S0040-6090(98)00545-8
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