Abstract: Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment.

Abstract: The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results.

Abstract: Electrical transport properties of a two-dimensional electron gas axe studied in the presence of a perpendicular magnetic field B modulated weakly and periodically along one direction, B = (B + B0 cos Kx)z, with B0 much less than B, K = 2pi/a, and a being the period of the modulation. B0 is taken constant or proportional to B. The Landau levels broaden into bands and their width, proportional to the modulation strength B0, oscillates with B and gives rise to oscillations in the magnetoresistance at low B. These oscillations reflect the commensurability between the cyclotron diameter at the Fermi level and the period a and consequently hey are distinctly different from the Shubnikov-de Ha.as ones, at higher B, in period and temperature dependence. The bandwidth at the Fermi energy can be one order of magnitude larger, at low B, than that of the electric case for equal modulation strengths. The resulting magnetoresistance oscillations have a much higher amplitude than those of the electric case with which they are out of phase. Explicit asymptotic expressions are derived for the temperature dependence of the transport coefficients. The case when both electric and magnetic modulations are present is also considered. The position of the resulting oscillations depends on the ratio delta between the two modulation strengths. When the modulations are out of phase there is no shift in the position of the oscillations when delta varies and for a particular value of delta the oscillations are suppressed.