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“Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks”. de Witte H, Conard T, Vandervorst W, Gijbels R, Applied surface science 203, 523 (2003). http://doi.org/10.1016/S0169-4332(02)00728-6
Abstract: We analyzed ultra-thin ZrO2/SiO2/Si gate dielectrics under post-deposition anneals in dry O-2 at temperatures from 500 to 700 degreesC. TOF-SIMS profiling of ZrO2/SiO2/Si stacks is hampered by many sputter induced artifacts. The depletion of oxygen leads to a decrease in SIMS intensities. However, preferential sputtering is accompanied by transport of the depleted species towards the surface. Due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. Either normal or radiation-enhanced diffusion transports oxygen back to the surface. Simultaneously also segregation of zirconium towards and through the interface is observed, resulting in a large zirconium tail in the underlying silicon substrate. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.387
Times cited: 15
DOI: 10.1016/S0169-4332(02)00728-6
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“Modeling of bombardment induced oxidation of silicon”. de Witte H, Vandervorst W, Gijbels R, Journal of applied physics 89, 3001 (2001). http://doi.org/10.1063/1.1344581
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 16
DOI: 10.1063/1.1344581
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“SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding”. de Witte H, Conard T, Vandervorst W, Gijbels R, Surface and interface analysis 29, 761 (2000). http://doi.org/10.1002/1096-9918(200011)29:11<761::AID-SIA926>3.0.CO;2-F
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.132
Times cited: 4
DOI: 10.1002/1096-9918(200011)29:11<761::AID-SIA926>3.0.CO;2-F
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“Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on wafer surfaces”. de Witte H, de Gendt S, Douglas M, Conard T, Kenis K, Mertens PW, Vandervorst W, Gijbels R, Journal of the electrochemical society 147, 13 (2000). http://doi.org/10.1149/1.1393457
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.259
Times cited: 14
DOI: 10.1149/1.1393457
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“Study of oxynitrides with dual beam TOF-SIMS”. de Witte H, Conard T, Vandervorst W, Gijbels R, , 611 (2000)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“XPS study of ion induced oxidation of silicon with and without oxygen flooding”. de Witte H, Conard T, Sporken R, Gouttebaron R, Magnee R, Vandervorst W, Caudano R, Gijbels R, , 73 (2000)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers”. Conard T, de Witte H, Loo R, Verheyen P, Vandervorst W, Caymax M, Gijbels R, Thin solid films : an international journal on the science and technology of thin and thick films 343/344, 583 (1999). http://doi.org/10.1016/S0040-6090(99)00122-4
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.879
Times cited: 1
DOI: 10.1016/S0040-6090(99)00122-4
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“Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution”. de Witte H, de Gendt S, Douglas M, Conard T, Kenis K, Mertens PW, Vandervorst W, Gijbels R s.n., Leuven, page 147 (1999).
Keywords: H1 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Modeling of bombardment induced oxidation of silicon with and without oxygen flooding”. de Witte H, Vandervorst W, Gijbels R, , 327 (1998)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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