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“Modification of the 2D electronic properties in Si-δ-doped InSb due to surface effects”. de Keyser A, Bogaerts R, van Bockstal L, Herlach F, Karavolas VC, Peeters FM, van de Graaf W, Borghs G, , 383 (1997)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“2D semiconductors at the Leuven pulsed field facility”. Bogaerts R, de Keyser A, van Bockstal L, van der Burgt M, van Esch A, Provoost R, Silverans R, Herlach F, Swinnen B, van de Stadt AFW, Koenraad PM, Wolter JH, Karavolas VC, Peeters FM, van de Graaf W, Borghs G, Physicalia magazine 19, 229 (1997)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
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“Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields”. Bogaerts R, Herlach F, de Keyser A, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, Physical review : B : condensed matter and materials physics 53, 15951 (1996). http://doi.org/10.1103/PhysRevB.53.15951
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 9
DOI: 10.1103/PhysRevB.53.15951
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“Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs”. de Keyser A, Bogaerts R, Karavolas VC, van Bockstal L, Herlach F, Peeters FM, van de Graaf W, Borghs G, Solid state electronics 40, 395 (1996). http://doi.org/10.1016/0038-1101(96)84617-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 2
DOI: 10.1016/0038-1101(96)84617-X
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“Cyclotron-resonance of 2d electrons at Si-\delta-doped InSb layers grown on GaAs”. Van Bockstal L, Mahy M, de Keyser A, Hoeks W, Herlach F, Peeters FM, Van de Graaf W, Borghs G, Physica: B : condensed matter 211, 466 (1995). http://doi.org/10.1016/0921-4526(94)01095-I
Abstract: Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 2
DOI: 10.1016/0921-4526(94)01095-I
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“Magnetotransport properties of Si-δ-doped InSb layers grown on GaAs”. de Keyser A, Bogaerts R, van Bockstal L, Hoeks W, Herlach F, Karavolas VC, Peeters FM, van de Graaf W, Borghs G, Physica: B : condensed matter 211, 455 (1995). http://doi.org/10.1016/0921-4526(94)01092-F
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 2
DOI: 10.1016/0921-4526(94)01092-F
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“Cyclotron-resonance of 2D electrons at Si-δ-doped InSb layers grown on GaAs”. van Bockstal L, Mahy M, de Keyser A, Hoeks W, Herlach F, Peeters FM, van de Graaf W, Borghs G, Physica: B : condensed matter 211, 455 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 2
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“Magnetic freeze-out induced transition from three- to two-dimensional magnetotransport in Si-δ-doped InSb layers grown on GaAs”. Bogaerts R, de Keyser A, van Bockstal L, Herlach F, Karavolas VC, Peeters FM, Borghs G, , 706 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Quantum oscillations in the Hall effect of thin Sc1-xErxAs epitaxial layers burried in GaAs”. Bogaerts R, de Keyser A, Herlach F, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, , 596 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Size effects in the transport properties of thin Sc1-xErxAs epitaxial layers buried in GaAs”. Bogaerts R, de Keyser A, Herlach F, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, Solid state electronics 37, 789 (1994). http://doi.org/10.1016/0038-1101(94)90299-2
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 4
DOI: 10.1016/0038-1101(94)90299-2
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