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Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current”. Pham A-T, Zhao Q-T, Jungemann C, Meinerzhagen B, Mantl S, Sorée B, Pourtois G, Solid state electronics 65-66, 64 (2011). http://doi.org/10.1016/j.sse.2011.06.021
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Origin of different deactivation of Pd/SnO2 and Pd/GeO2 catalysts in methanol dehydrogenation and reforming: a comparative study”. Lorenz H, Zhao Q, Turner S, Lebedev OI, Van Tendeloo G, Kloetzer B, Rameshan C, Pfaller K, Applied catalysis : A : general 381, 242 (2010). http://doi.org/10.1016/j.apcata.2010.04.015
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Preparation and structural characterization of SnO2 and GeO2 methanol steam reforming thin film model catalysts by (HR)TEM”. Lorenz H, Zhao Q, Turner S, Lebedev OI, Van Tendeloo G, Klötzer B, Rameshan C, Penner S, Materials chemistry and physics 122, 623 (2010). http://doi.org/10.1016/j.matchemphys.2010.03.057
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Catalytic characterization of pure SnO2 and GeO2 in methanol steam reforming”. Zhao Q, Lorenz H, Turner S, Lebedev OI, Van Tendeloo G, Rameshan C, Klötzer B, Konzett J, Penner S, Applied catalysis : A : general 375, 188 (2010). http://doi.org/10.1016/j.apcata.2009.12.027
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High precision determination of the elastic strain of InGaN/GaN multiple quantum wells”. Wu MF, Zhou S, Yao S, Zhao Q, Vantomme A, van Daele B, Piscopiello E, Van Tendeloo G, Tong YZ, Yang ZJ, Yu TJ, Zhang GY, Journal of vacuum science and technology: B: microelectronics and nanometer structures 22, 920 (2004). http://doi.org/10.1116/1.1715085
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