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“Relaxor ferroelectricity and magnetoelectric coupling in ZnOCo nanocomposite thin films : beyond multiferroic composites”. Li DY, Zeng YJ, Batuk D, Pereira LMC, Ye ZZ, Fleischmann C, Menghini M, Nikitenko S, Hadermann J, Temst K, Vantomme A, Van Bael MJ, Locquet JP, Van Haesendonck C;, ACS applied materials and interfaces 6, 4737 (2014). http://doi.org/10.1021/am4053877
Abstract: ZnOCo nanocomposite thin films are synthesized by combination of pulsed laser deposition of ZnO and Co ion implantation. Both superparamagnetism and relaxor ferroelectricity as well as magnetoelectric coupling in the nanocomposites have been demonstrated. The unexpected relaxor ferroelectricity is believed to be the result of the local lattice distortion induced by the incorporation of the Co nanoparticles. Magnetoelectric coupling can be attributed to the interaction between the electric dipole moments and the magnetic moments, which are both induced by the incorporation of Co. The introduced ZnOCo nanocomposite thin films are different from conventional strain-mediated multiferroic composites.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.504
Times cited: 21
DOI: 10.1021/am4053877
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“Anisotropic magnetism and spin-dependent transport in Co nanoparticle embedded ZnO thin films”. Li DY, Zeng YJ, Pereira LMC, Batuk D, Hadermann J, Zhang YZ, Ye ZZ, Temst K, Vantomme A, Van Bael MJ, Van Haesendonck C;, Journal of applied physics 114, 033909 (2013). http://doi.org/10.1063/1.4815877
Abstract: Oriented Co nanoparticles were obtained by Co ion implantation in crystalline ZnO thin films grown by pulsed laser deposition. Transmission electron microscopy revealed the presence of elliptically shaped Co precipitates with nanometer size, which are embedded in the ZnO thin films, resulting in anisotropic magnetic behavior. The low-temperature resistance of the Co-implanted ZnO thin films follows the Efros-Shklovskii type variable-range-hopping. Large negative magnetoresistance (MR) exceeding 10% is observed in a magnetic field of 1 T at 2.5K and the negative MR survives up to 250K (0.3%). The negative MR reveals hysteresis as well as anisotropy that correlate well with the magnetic properties, clearly demonstrating the presence of spin-dependent transport. (C) 2013 AIP Publishing LLC.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 10
DOI: 10.1063/1.4815877
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“Unexpected optical response of single ZnO nanowires probed using controllable electrical contacts”. Zeng YI, Menghini M, Li DY, Lin SS, Ye ZZ, Hadermann J, Moorkens T, Seo JW, Locquet J-P, van Haesendonck C, Physical chemistry, chemical physics 13, 6931 (2011). http://doi.org/10.1039/c1cp00012h
Abstract: Relying on combined electron-beam lithography and lift-off methods Au/Ti bilayer electrical contacts were attached to individual ZnO nanowires (NWs) that were grown by a vapor phase deposition method. Reliable Schottky-type as well as ohmic contacts were obtained depending on whether or not an ion milling process was used. The response of the ZnO NWs to ultraviolet light was found to be sensitive to the type of contacts. The intrinsic electronic properties of the ZnO NWs were studied in a field-effect transistor configuration. The transfer characteristics, including gate threshold voltage, hysteresis and operational mode, were demonstrated to unexpectedly respond to visible light. The origin of this effect could be accounted for by the presence of point defects in the ZnO NWs.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.123
Times cited: 7
DOI: 10.1039/c1cp00012h
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