“Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride”. Chen L, Elibol K, Cai H, Jiang C, Shi W, Chen C, Wang HS, Wang X, Mu X, Li C, Watanabe K, Taniguchi T, Guo Y, Meyer JC, Wang H, 2d Materials 8, 024001 (2021). http://doi.org/10.1088/2053-1583/ABD41E
Abstract: Hexagonal boron nitride (h-BN) has long been recognized as an ideal substrate for electronic devices due to its dangling-bond-free surface, insulating nature and thermal/chemical stability. These properties of the h-BN multilayer are mainly determined by its lattice structure. Therefore, to analyse the lattice structure and orientation of h-BN crystals becomes important. Here, the stacking order and wrinkles of h-BN are investigated by transmission electron microscopy. It is experimentally confirmed that the layers in the h-BN flakes are arranged in the AA ' stacking. The wrinkles in a form of threefold network throughout the h-BN crystal are oriented along the armchair direction, and their formation mechanism was further explored by molecular dynamics simulations. Our findings provide a deep insight about the microstructure of h-BN and shed light on the structural design/electronic modulations of two-dimensional crystals.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.937
DOI: 10.1088/2053-1583/ABD41E
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“Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride”. Wang HS, Chen L, Elibol K, He L, Wang H, Chen C, Jiang C, Li C, Wu T, Cong CX, Pennycook TJ, Argentero G, Zhang D, Watanabe K, Taniguchi T, Wei W, Yuan Q, Meyer JC, Xie X, Nature Materials , 1 (2020). http://doi.org/10.1038/S41563-020-00806-2
Abstract: Oriented trenches are created in h-BN using different catalysts, and used as templates to grow seamlessly integrated armchair and zigzag graphene nanoribbons with chirality-dependent electrical and magnetic conductance properties. The integrated in-plane growth of graphene nanoribbons (GNRs) and hexagonal boron nitride (h-BN) could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge-specific GNRs in the lattice of h-BN still remains a significant challenge. Here we developed a two-step growth method and successfully achieved sub-5-nm-wide zigzag and armchair GNRs embedded in h-BN. Further transport measurements reveal that the sub-7-nm-wide zigzag GNRs exhibit openings of the bandgap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap-width relationship. An obvious conductance peak is observed in the transfer curves of 8- to 10-nm-wide zigzag GNRs, while it is absent in most armchair GNRs. Zigzag GNRs exhibit a small magnetic conductance, while armchair GNRs have much higher magnetic conductance values. This integrated lateral growth of edge-specific GNRs in h-BN provides a promising route to achieve intricate nanoscale circuits.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 41.2
Times cited: 3
DOI: 10.1038/S41563-020-00806-2
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