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“Techno-economic assessment of different conversion pathways for pyrolysis char from pig manure”. Kuppens T, Van Dael M, Maggen J, Vanreppelen K, Yperman J, Carleer R, Elen H, Van Passel S, 22nd European Biomass Conference and Exhibition : Setting the Course for a Biobased Economy, 23-26 June 2014, Hamburg, Germany : conference proceedings, 901 (2014)
Abstract: The amount of animal manure that can be brought back to agricultural land is limited by legislation. Because pig manure is available in too large quantities in some areas, we investigate the techno-economic feasibility of converting it into valuable products. First, slurry is separated in water, a thick fraction and a fertilizer concentrate poor in phosphate. Then, the thick fraction is dried and pyrolyzed. Our goal is to identify the optimal pyrolysis and activation conditions for the production of biochar or activated carbon. The latter has interesting adsorption characteristics due to the presence of nitrogen. It can also be used as a soil amendment as it improves biomass quantity and quality. On top, it immobilizes toxic elements and stores carbon in the soil. Char thus has many interesting characteristics and can be valued in different ways. The economic feasibility has been explored by a first techno-economic modelling iteration. The critical factors influencing the feasibility are identified by Monte Carlo simulations for further improvement of the process design.
Keywords: P1 Proceeding; Engineering sciences. Technology
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“Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates”. Delabie A, Jayachandran S, Caymax M, Loo R, Maggen J, Pourtois G, Douhard B, Conard T, Meersschaut J, Lenka H, Vandervorst W, Heyns M;, ECS solid state letters 2, P104 (2013). http://doi.org/10.1149/2.009311ssl
Abstract: Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O-3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O-3 reaction at 50 degrees C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm(2) is achieved from SiH4 at 500 degrees C. (C) 2013 The Electrochemical Society. All rights reserved.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.184
Times cited: 12
DOI: 10.1149/2.009311ssl
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