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“A method to calculate tunneling leakage currents in silicon inversion layers”. Lujan GS, Sorée B, Magnus W, de Meyer K, Journal of applied physics 100, 033708 (2006). http://doi.org/10.1063/1.2219343
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 1
DOI: 10.1063/1.2219343
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“A new method to calculate leakage current and its applications for sub-45nm MOSFETs”. Lujan GS, Magnus W, Soree B, Pourghaderi MA, Veloso A, van Dal MJH, Lauwers A, Kubicek S, De Gendt S, Heyns M, De Meyer K, Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France. Ieee, S.l., page 489 (2005).
Abstract: This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical firm of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors.
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
DOI: 10.1109/ESSDER.2005.1546691
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“Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility”. Lujan GS, Magnus W, Sorée B, Ragnarsson LA, Trojman L, Kubicek S, De Gendt S, Heyns A, De Meyer K, Microelectronic engineering 80, 82 (2005). http://doi.org/10.1016/j.mee.2005.04.047
Abstract: The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 1
DOI: 10.1016/j.mee.2005.04.047
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