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“Spin-dependent tunneling in diluted magnetic semiconductor trilayer structures”. Krstajic P, Peeters FM, Physical review : B : condensed matter and materials physics 72, 125350 (2005). http://doi.org/10.1103/PhysRevB.72.125350
Abstract: Tunneling of holes through a trilayer structure made of two diluted magnetic semiconductors, (Ga,Mn)As, separated by a thin layer of nonmagnetic AlAs is investigated. The problem is treated within the 6x6 Luttinger-Kohn model for valence bands with the split-off band included. The influence of the spin-orbit coupling is pronounced as the spin-splitting Delta(ex) is comparable with the split-off Delta(SO) splitting. It is assumed that direct tunneling is the dominant mechanism due to the high quality of the tunnel junctions. Our theoretical results predict the correct order of magnitude for the tunneling magnetoresistance ratio, but various other effects, such as scattering on impurities and defects, should be included in order to realize a quantitative agreement with experiment.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.72.125350
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“Mechanisms of double magnetic exchange in dilute magnetic semiconductors”. Fleurov V, Kikoin K, Ivanov VA, Krstajic PM, Peeters FM, Journal of magnetism and magnetic materials
T2 –, International Conference on Magnetism (ICM 2003), JUL 27-AUG 01, 2003, Rome, ITALY 272, 1967 (2004). http://doi.org/10.1016/j.jmmm.2003.12.1067
Abstract: A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. T-C estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism. (C) 2003 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.63
Times cited: 12
DOI: 10.1016/j.jmmm.2003.12.1067
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“On the nature of ferromagnetism in diluted magnetic semiconductors : GaAs:Mn”. Krstajic PM, Ivanov VA, Peeters FM, Fleurov V, Kikoin K, Europhysics letters 61, 235 (2003). http://doi.org/10.1209/epl/i2003-00224-x
Abstract: An energy level diagram is constructed on the basis of a microscopic Hamiltonian proposed for a description of interacting manganese impurities in diluted magnetic semiconductors (DMS). It is shown that ferromagnetism in p-type III-V DMS is governed by the strong hybridization of Mn2+-electrons with the mobile holes and localized states near the top of the valence band. The Curie temperature estimated from the proposed kinematic exchange agrees with the experiments on GaAs:Mn. The model is also applicable to the GaP:Mn system.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 38
DOI: 10.1209/epl/i2003-00224-x
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“Ferromagnetism in Mn-doped GaAs : the kinematic exchange”. Krstajic PM, Ivanov VA, Peeters FM, Fleurov V, Kikoin K, Journal of superconductivity
T2 –, PASPS Conference 2002, JUL, 2002, WURZBURG, GERMANY 16, 111 (2003). http://doi.org/10.1023/A:1023253205699
Abstract: We developed a microscopic model in order to describe the onset of ferromagnetism (FM) in GaAs:Mn. The proposed kinematic mechanism bears resemblances with the Zener exchange. The calculated Curie temperature for GaAs: Mn is in good agreement with available experimental data of the Curie temperature as a function of the manganese concentration.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Times cited: 2
DOI: 10.1023/A:1023253205699
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“On the nature of ferromagnetism in dilute magnetic semiconductors : GaAs:Mn and GaP:Mn”. Ivanov VA, Krstajic PM, Peeters FM, Fleurov V, Kikoin K, Journal of magnetism and magnetic materials
T2 –, 2nd Moscow International Symposium on Magnetism (MISM 2001), JUN 20-24, 2001, MOSCOW STATE UNIV, MOSCOW, RUSSIA 258, 237 (2003). http://doi.org/10.1016/S0304-8853(02)01023-5
Abstract: On the basis of a simplified Hamiltonian for transition metal impurities in diluted magnetic semiconductors (DMS), the nature of ferromagnetism in p-type III-V DMS are investigated. Ferromagnetism is governed by the Anderson-Hubbard parameter for 3d electrons of Mn2+ and their strong hybridization with the hole carriers in the semiconducting medium. The origin of ferromagnetism in these materials has similarity with the Zener mechanism. From the energetically preferable parallel orientation of Mn spins the Curie temperature is calculated for GaAs:Mn. (C) 2002 Published by Elsevier Science B.V.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.63
Times cited: 10
DOI: 10.1016/S0304-8853(02)01023-5
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“On the ferromagnetic exchange in Mn-doped III-V semiconductors”. Ivanov VA, Krstajic PM, Peeters FM, Fleurov V, Kikoin K, Physica: B : condensed matter
T2 –, 23rd International Conference on Low Temperature Physics (LT23), AUG 20-27, 2002, HIROSHIMA, JAPAN 329, 1282 (2003). http://doi.org/10.1016/S0921-4526(02)02240-8
Abstract: We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments. (C) 2003 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.386
Times cited: 5
DOI: 10.1016/S0921-4526(02)02240-8
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