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“Proton and Li-Ion permeation through graphene with eight-atom-ring defects”. Griffin E, Mogg L, Hao G-P, Kalon G, Bacaksiz C, Lopez-Polin G, Zhou TY, Guarochico V, Cai J, Neumann C, Winter A, Mohn M, Lee JH, Lin J, Kaiser U, Grigorieva I V, Suenaga K, Ozyilmaz B, Cheng H-M, Ren W, Turchanin A, Peeters FM, Geim AK, Lozada-Hidalgo M, Acs Nano 14, 7280 (2020). http://doi.org/10.1021/ACSNANO.0C02496
Abstract: Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries, and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here, we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes similar to 1000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of eight-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to that of the six-atom rings of graphene and a relatively low barrier of similar to 0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 17.1
Times cited: 34
DOI: 10.1021/ACSNANO.0C02496
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“Enhanced superconductivity in few-layer TaS₂, due to healing by oxygenation”. Bekaert J, Khestanova E, Hopkinson DG, Birkbeck J, Clark N, Zhu M, Bandurin DA, Gorbachev R, Fairclough S, Zou Y, Hamer M, Terry DJ, Peters JJP, Sanchez AM, Partoens B, Haigh SJ, Milošević, MV, Grigorieva I V, Nano Letters 20, 3808 (2020). http://doi.org/10.1021/ACS.NANOLETT.0C00871
Abstract: When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional (2D) materials. While defects are generally thought to negatively affect superconductivity in 2D materials, here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS2). Our first-principles calculations show that incorporation of oxygen into the TaS2 crystal lattice is energetically favorable and effectively heals sulfur vacancies typically present in these crystals, thus restoring the electronic band structure and the carrier density to the intrinsic characteristics of TaS2. Strikingly, this leads to a strong enhancement of the electron-phonon coupling, by up to 80% in the highly oxygenated limit. Using transport measurements on fresh and aged (oxygenated) few-layer TaS2, we found a marked increase of the superconducting critical temperature (T-c) upon aging, in agreement with our theory, while concurrent electron microscopy and electron-energy loss spectroscopy confirmed the presence of sulfur vacancies in freshly prepared TaS2 and incorporation of oxygen into the crystal lattice with time. Our work thus reveals the mechanism by which certain atomic-scale defects can be beneficial to superconductivity and opens a new route to engineer T-c in ultrathin materials.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 10.8
Times cited: 16
DOI: 10.1021/ACS.NANOLETT.0C00871
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