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“A hard oxide semiconductor with a direct and narrow bandgap and switchable pn electrical conduction”. Ovsyannikov SV, Karkin AE, Morozova NV, Shchennikov VV, Bykova E, Abakumov AM, Tsirlin AA, Glazyrin KV, Dubrovinsky L, Advanced materials 26, 8185 (2014). http://doi.org/10.1002/adma.201403304
Abstract: An oxide semiconductor (perovskite-type Mn2O3) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 27
DOI: 10.1002/adma.201403304
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“Perovskite-like Mn2O3 : a path to new manganites”. Ovsyannikov SV, Abakumov AM, Tsirlin AA, Schnelle W, Egoavil R, Verbeeck J, Van Tendeloo G, Glazyrin KV, Hanfland M, Dubrovinsky L, Angewandte Chemie 52, 1494 (2013). http://doi.org/10.1002/anie.201208553
Abstract: Korund-artiges ε-Mn2O3 und Perowskit-artiges ζ-Mn2O3, zwei neue Phasen von Mn2O3, wurden unter hohen Drücken bei hohen Temperaturen synthetisiert. Die Manganatome können vollständig die A- und B-Positionen der Perowskitstruktur besetzen. ζ-Mn2O3 (siehe Bild, A-Positionsordnung) enthält Mn in den drei Oxidationsstufen +II, +III und +IV.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 11.994
Times cited: 84
DOI: 10.1002/anie.201208553
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