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“Occupancy of lattice positions probed by X-ray photoelectron diffraction : a case study of tetradymite topological insulators”. Vladimirova NV, Frolov AS, Sanchez-Barriga J, Clark OJ, Matsui F, Usachov DY, Muntwiler M, Callaert C, Hadermann J, Neudachina VS, Tamm ME, Yashina LV, Surfaces and interfaces 36, 102516 (2023). http://doi.org/10.1016/J.SURFIN.2022.102516
Abstract: Occupancy of different structural positions in a crystal lattice often seems to play a key role in material prop-erties. Several experimental techniques have been developed to uncover this issue, all of them being mostly bulk sensitive. However, many materials including topological insulators (TIs), which are among the most intriguing modern materials, are intended to be used in devices as thin films, for which the sublattice occupancy may differ from the bulk. One of the possible approaches to occupancy analysis is X-ray Photoelectron Diffraction (XPD), a structural method in surface science with chemical sensitivity. We applied this method in a case study of Sb2(Te1-xSex)3 mixed crystals, which belong to prototypical TIs. We used high-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) as a reference method to verify our analysis. We revealed that the XPD data for vacuum cleaved bulk crystals are in excellent agreement with the reference ones. Also, we demonstrate that the anion occupancy near a naturally formed surface can be rather different from that of the bulk. The present results are relevant for a wide range of compositions where the system remains a topological phase, as we ultimately show by probing the transiently occupied topological surface state above the Fermi level by ultrafast photoemission.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.2
DOI: 10.1016/J.SURFIN.2022.102516
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“Nanoscale phase separation in the oxide layer at GeTe (111) surfaces”. Frolov AS, Callaert C, Batuk M, Hadermann J, Volykhov AA, Sirotina AP, Amati M, Gregoratti L, Yashina LV, Nanoscale 14, 12918 (2022). http://doi.org/10.1039/D2NR02261C
Abstract: As a semiconductor ferroelectric, GeTe has become a focus of renewed attention due to the recent discovery of giant Rashba splitting. It already has a wide range of applications, from thermoelectricity to data storage. Its stability in ambient air, as well as the structure and properties of an oxide layer, define the processing media for device production and operation. Here, we studied a reaction between the GeTe (111) surface and molecular oxygen for crystals having solely inversion domains. We evaluated the reaction kinetics both ex situ and in situ using NAP XPS. The structure of the oxide layer is extensively discussed, where, according to HAADF-STEM and STEM-EDX, nanoscale phase separation of GeO2 and Te is observed, which is unusual for semiconductors. We believe that such behaviour is closely related to the ferroelectric properties and the domain structure of GeTe.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 6.7
DOI: 10.1039/D2NR02261C
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“Impact of ordering on the reactivity of mixed crystals of topological insulators with anion substitution: Bi₂SeTe₂, and Sb₂SeTe₂”. Volykhov AA, Frolov AS, Neudachina VS, Vladimirova NV, Gerber E, Callaert C, Hadermann J, Khmelevsky NO, Knop-Gericke A, Sanchez-Barriga J, Yashina LV, Applied Surface Science 541, 148490 (2021). http://doi.org/10.1016/J.APSUSC.2020.148490
Abstract: Three-dimensional topological insulators are exotic materials with unique properties. Tetradymite type binary chalcogenides of bismuth and antimony, as well as their mixed crystals, belong to prototypical TIs. Potential device applications of these materials require in-depth knowledge of their stability in the ambient atmosphere and other media maintained during their processing. Here we investigated the reactivity of mixed crystals with anion substitution, Bi-2(Se1-xTex)(3) and Sb2(Se1-xTex)(3), towards molecular oxygen using both in situ and ex situ X-ray photoelectron spectroscopy. The results indicate that, in contrast to cation substitution, partial substitution of tellurium by selenium atoms leads to anomalously high surface reactivity, which even exceeds that of the most reactive binary constituent. We attribute this effect to anion ordering that essentially modifies the bond geometry, especially the respective bond angles as modeled by DFT.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.387
DOI: 10.1016/J.APSUSC.2020.148490
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“Atomic and electronic structure of a multidomain GeTe crystal”. Frolov AS, Sanchez-Barriga J, Callaert C, Hadermann J, Fedorov A V, Usachov DY, Chaika AN, Walls BC, Zhussupbekov K, Shvets I V, Muntwiler M, Amati M, Gregoratti L, Varykhalov AY, Rader O, Yashina L V, Acs Nano 14, 16576 (2020). http://doi.org/10.1021/ACSNANO.0C05851
Abstract: Renewed interest in the ferroelectric semi-conductor germanium telluride was recently triggered by the direct observation of a giant Rashba effect and a 30-year-old dream about a functional spin field-effect transistor. In this respect, all-electrical control of the spin texture in this material in combination with ferroelectric properties at the nanoscale would create advanced functionalities in spintronics and data information processing. Here, we investigate the atomic and electronic properties of GeTe bulk single crystals and their (111) surfaces. We succeeded in growing crystals possessing solely inversion domains of similar to 10 nm thickness parallel to each other. Using HAADF-TEM we observe two types of domain boundaries, one of them being similar in structure to the van der Waals gap in layered materials. This structure is responsible for the formation of surface domains with preferential Te-termination (similar to 68%) as we determined using photoelectron diffraction and XPS. The lateral dimensions of the surface domains are in the range of similar to 10-100 nm, and both Ge- and Te-terminations reveal no reconstruction. Using spin-ARPES we establish an intrinsic quantitative relationship between the spin polarization of pure bulk states and the relative contribution of different terminations, a result that is consistent with a reversal of the spin texture of the bulk Rashba bands for opposite configurations of the ferroelectric polarization within individual nanodomains. Our findings are important for potential applications of ferroelectric Rashba semiconductors in nonvolatile spintronic devices with advanced memory and computing capabilities at the nanoscale.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 17.1
DOI: 10.1021/ACSNANO.0C05851
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“Mechanistic studies of gas reactions with multicomponent solids : what can we learn by combining NAP XPS and atomic resolution STEM/EDX?”.Sirotina AP, Callaert C, Volykhov AA, Frolov AS, Sanchez-Barriga J, Knop-Gericke A, Hadermann J, Yashina LV, The journal of physical chemistry: C : nanomaterials and interfaces 123, 26201 (2019). http://doi.org/10.1021/ACS.JPCC.9B05052
Abstract: Rapid development of experimental techniques has enabled real time studies of solid gas reactions at the level reaching the atomic scale. In the present paper, we focus on a combination of atomic resolution STEM/EDX, which visualizes the reaction zone, and near ambient pressure (NAP) XPS, which collects information for a surface layer of variable thickness under reaction conditions. We compare the behavior of two affined topological insulators, Bi2Te3 and Sb2Te3. We used a simple reaction with molecular oxygen occurring at 298 K, which is of practical importance to avoid material degradation. Despite certain limitations, a combination of in situ XPS and ex situ cross-sectional STEM/EDX allowed us to obtain a self-consistent picture of the solid gas reaction mechanism for oxidation of Sb2Te3 and Bi2Te3 crystals, which includes component redistribution between the oxide and the subsurface layer and Te segregation with formation of a thin ordered layer at the interface. The process is multistep in case of both compounds. At the very beginning of the oxidation process the reactivity is determined by the energy benefit of the corresponding element oxygen bond formation. Further in the oxidation process, the behavior of these two compounds becomes similar and features component redistribution between the oxide and the subsurface layer.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 4.536
DOI: 10.1021/ACS.JPCC.9B05052
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