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“Correlating structure and detection properties in HgTe nanocrystal films”. Chee S-S, Greboval C, Vale Magalhaes D, Ramade J, Chu A, Qu J, Rastogi P, Khalili A, Dang TH, Dabard C, Prado Y, Patriarche G, Chaste J, Rosticher M, Bals S, Delerue C, Lhuillier E, Nano Letters 21, 4145 (2021). http://doi.org/10.1021/ACS.NANOLETT.0C04346
Abstract: HgTe nanocrystals (NCs) enable broadly tunable infrared absorption, now commonly used to design light sensors. This material tends to grow under multipodic shapes and does not present well-defined size distributions. Such point generates traps and reduces the particle packing, leading to a reduced mobility. It is thus highly desirable to comprehensively explore the effect of the shape on their performance. Here, we show, using a combination of electron tomography and tight binding simulations, that the charge dissociation is strong within HgTe NCs, but poorly shape dependent. Then, we design a dual-gate field-effect-transistor made of tripod HgTe NCs and use it to generate a planar p-n junction, offering more tunability than its vertical geometry counterpart. Interestingly, the performance of the tripods is higher than sphere ones, and this can be correlated with a stronger Te excess in the case of sphere shapes which is responsible for a higher hole trap density.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.712
Times cited: 20
DOI: 10.1021/ACS.NANOLETT.0C04346
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“Ferroelectric gating of narrow band-gap nanocrystal arrays with enhanced light-matter coupling”. Greboval C, Chu A, Vale Magalhaes D, Ramade J, Qu J, Rastogi P, Khalili A, Chee S-S, Aubin H, Vincent G, Bals S, Delerue C, Lhuillier E, Acs Photonics 8, 259 (2021). http://doi.org/10.1021/ACSPHOTONICS.0C01464
Abstract: As narrow band gap nanocrystals become a considerable building block for the design of infrared sensors, device design needs to match their actual operating conditions. While in the near and shortwave infrared, room-temperature operation has been demonstrated, longer wavelengths still require low-temperature operations and thus specific design. Here, we discuss how field-effect transistors (FETs) can be compatible with low-temperature detection. To reach this goal, two key developments are proposed. First, we report the gating of nanocrystal films from SrTiO3 which leads to high gate capacitance with leakage and breakdown free operation in the 4-100 K range. Second, we demonstrate that this FET is compatible with a plasmonic resonator whose role is to achieve strong light absorption from a thin film used as the channel of the FET. Combining three resonances, broadband absorption from 1.5 to 3 mu m reaching 30% is demonstrated. Finally, combining gate and enhanced light-matter coupling, we show that detectivity can be as high as 10(12) Jones for a device presenting a 3 mu m cutoff wavelength and 30 K operation.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 6.756
Times cited: 21
DOI: 10.1021/ACSPHOTONICS.0C01464
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