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“Alternative Metals: from ab initio Screening to Calibrated Narrow Line Models”. Adelmann C, Sankaran K, Dutta S, Gupta A, Kundu S, Jamieson G, Moors K, Pinna N, Ciofi I, Van Elshocht S, Bommels J, Boccardi G, Wilson CJ, Pourtois G, Tokei Z, Proceedings of the IEEE ... International Interconnect Technology Conference
T2 –, IEEE International Interconnect Technology Conference (IITC), JUN 04-07, 2018, Santa Clara, CA , 154 (2018). http://doi.org/10.1109/IITC.2018.8456484
Abstract: We discuss the selection and assessment of alternative metals by a combination of ab initio computation of electronic properties, experimental resistivity assessments, and calibrated line resistance models. Pt-group metals as well as Nb are identified as the most promising elements, with Ru showing the best combination of material properties and process maturity. An experimental assessment of the resistivity of Ru, Ir, and Co lines down to similar to 30 nm(2) is then used to devise compact models for line and via resistance that can be compared to Cu predictions. The main advantage of alternative metals originates from the possibility for barrierless metallization.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1109/IITC.2018.8456484
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“Thickness dependence of the resistivity of platinum-group metal thin films”. Dutta S, Sankaran K, Moors K, Pourtois G, Van Elshocht S, Bommels J, Vandervorst W, Tokei Z, Adelmann C, Journal of applied physics 122, 025107 (2017). http://doi.org/10.1063/1.4992089
Abstract: We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, and Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses below about 5 nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free path, the data for Ru, Ir, and Cu were modeled within the semiclassical Mayadas-Shatzkes model [Phys. Rev. B 1, 1382 (1970)] to assess the combined contributions of surface and grain boundary scattering to the resistivity. For Ru, the modeling results indicated that surface scattering was strongly dependent on the surrounding material with nearly specular scattering at interfaces with SiO2 or air but with diffuse scattering at interfaces with TaN. The dependence of the thin film resistivity on the mean free path is also discussed within the Mayadas-Shatzkes model in consideration of the experimental findings. Published by AIP Publishing.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 42
DOI: 10.1063/1.4992089
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