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“On the Origin of Diamond Plates Deposited at Low Temperature”. Drijkoningen S, Pobedinskas P, Korneychuk S, Momot A, Balasubramaniam Y, Van Bael MK, Turner S, Verbeeck J, Nesladekt M, Haenen K, Crystal growth &, design 17, 4306 (2017). http://doi.org/10.1021/ACS.CGD.7B00623
Abstract: The crucial requirement for diamond growth at low temperatures, enabling a wide range of new applications, is a high plasma density at a low gas pressure, which leads to a low thermal load onto sensitive substrate materials. While these conditions are not within reach for resonance cavity plasma systems, linear antenna microwave delivery systems allow the deposition of high quality diamond films at temperatures around 400 degrees C and at pressures below 1 mbar. In this work the codeposition of high quality plates and octahedral diamond grains in nanocrystalline films is reported. In contrast to previous reports claiming the need for high temperatures (T >= 850 degrees C), low temperatures (320 degrees C <= T <= 410 degrees C) were sufficient to deposit diamond plate structures. Cross-sectional high resolution transmission electron microscopy studies show that these plates are faulty cubic diamond terminated by large {111} surface facets with very little sp(2) bonded carbon in the grain boundaries. Raman and electron energy loss spectroscopy studies confirm a high diamond quality, above 93% sp(3) carbon content. Three potential mechanisms, that can account for the initial development of the observed plates rich with stacking faults, and are based on the presence of impurities, are proposed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.055
Times cited: 23
DOI: 10.1021/ACS.CGD.7B00623
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“Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond”. Balasubramaniam Y, Pobedinskas P, Janssens SD, Sakr G, Jomard F, Turner S, Lu YG, Dexters W, Soltani A, Verbeeck J, Barjon J, Nesládek M, Haenen K;, Applied physics letters 109, 062105 (2016). http://doi.org/10.1063/1.4960970
Abstract: The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 mu m thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 mu m h(-1). A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 x 10(16) cm(-3) phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications. Published by AIP Publishing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 20
DOI: 10.1063/1.4960970
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