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| Author | Hai; Studart; Peeters, F.M. | ||||
| Title | Electron-mobility in 2 coupled delta-layers | Type | A1 Journal article | ||
Year  |
1995 | Publication | Physical review : B : condensed matter and materials physics | Abbreviated Journal | Phys Rev B |
| Volume | 52 | Issue | 15 | Pages | 11273-11276 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Lancaster, Pa | Editor | ||
| Language | Wos | A1995TA85200092 | Publication Date | 2002-07-27 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0163-1829;1095-3795; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.736 | Times cited | 25 | Open Access | |
| Notes | Approved | no | |||
| Call Number | UA @ lucian @ c:irua:95343 | Serial | 976 | ||
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