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| Author | Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. | ||||
| Title | Signature of ballistic band-tail tunneling current in tunnel FET | Type | A1 Journal article | ||
Year  |
2020 | Publication | Ieee Transactions On Electron Devices | Abbreviated Journal | Ieee T Electron Dev |
| Volume | 67 | Issue | 8 | Pages | 3486-3491 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in the transfer and output characteristics of the TFETs. In particular, we demonstrate that the temperature dependence of a BTT-dominated subthreshold swing (SS) is in agreement with the reported experimental results. We explain how the temperature dependence of the output characteristics can be used to distinguish between a current dominated by BTT and a current dominated by trap-assisted tunneling. Finally, we propose an expression that relates the energetic extension of the quasi-extended BT states in the bandgap to the onset voltage for tunneling. | ||||
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| Language | Wos | 000552976100072 | Publication Date | 2020-07-03 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
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| ISSN | 0018-9383 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.1 | Times cited | Open Access | ||
| Notes | ; This work was supported by imec's Industrial Affiliation Program. ; | Approved | Most recent IF: 3.1; 2020 IF: 2.605 | ||
| Call Number | UA @ admin @ c:irua:171189 | Serial | 6601 | ||
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