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Author Clima, S.; Garbin, D.; Devulder, W.; Keukelier, J.; Opsomer, K.; Goux, L.; Kar, G.S.; Pourtois, G.
Title Material relaxation in chalcogenide OTS SELECTOR materials Type A1 Journal article
Year (down) 2019 Publication Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 215 Issue 215 Pages 110996
Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Nature of the mobility-gap states in amorphous Ge-rich Ge50Se50 was found to be related to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material suffers Ge-Ge bond concentration drift during material ageing, which can explain the observed reliability of the aGe(50)Se(50) selector devices. Strong Ge-N bonds were introduced to alleviate the observed instability.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000480665600008 Publication Date 2019-05-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 1 Open Access
Notes Approved Most recent IF: 1.806
Call Number UA @ admin @ c:irua:161905 Serial 6308
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