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| Author | Lu, A.K.A.; Houssa, M.; Luisier, M.; Pourtois, G. | ||||
| Title | Impact of layer alignment on the behavior of MoS2-ZrS2 tunnel field-effect transistors : an ab initio study | Type | A1 Journal article | ||
Year  |
2017 | Publication | Physical review applied | Abbreviated Journal | Phys Rev Appl |
| Volume | 8 | Issue | 3 | Pages | 034017 |
| Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
| Abstract | Tunnel field-effect transistors based on van der Waals heterostructures are emerging device concepts for low-power applications, auguring sub-60 mV/dec subthreshold swing values. In these devices, the channel is built from a stack of several different two-dimensional materials whose nature allows tailoring the band alignments and enables a good electrostatic control of the device. In this work, we propose a theoretical study of the variability of the performances of a MoS2-ZrS2 tunnel field-effect transistor induced by fluctuations of the relative position or the orientation of the layers. Our results indicate that although a steep subthreshold slope (20 mV/dec) is achievable, fluctuations in the relative orientation of the ZrS2 layer with respect to the MoS2 one lead to a significant variability in the tunneling current by about one decade. This arises from changes in the orbital overlap between the layers and from the modulation of the transport direction. | ||||
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| Corporate Author | Thesis | ||||
| Publisher | American Physical Society | Place of Publication | College Park, Md | Editor | |
| Language | Wos | 000411460400001 | Publication Date | 2017-09-22 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2331-7019 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 4.808 | Times cited | 6 | Open Access | OpenAccess |
| Notes | Approved | Most recent IF: 4.808 | |||
| Call Number | UA @ lucian @ c:irua:146741 | Serial | 4785 | ||
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