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| Author | Jones, E.; Cooper, D.; Rouvière, J.-L.; Béché, A.; Azize, M.; Palacios, T.; Gradecak, S. | ||||
| Title | Towards rapid nanoscale measurement of strain in III-nitride heterostructures | Type | A1 Journal article | ||
Year  |
2013 | Publication | Applied Physics Letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 103 | Issue | Pages | 231904 | |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | We report the structural and compositional nanoscale characterization of InAlN/GaN nanoribbon-structured high electron mobility transistors (HEMTs) through the use of geometric phase analysis (GPA) and nanobeam electron diffraction (NBED). The strain distribution in the HEMT layer is quantified and compared to the expected strain profile for the nominal structure predicted by finite element analysis (FEA). Using the experimental strain results, the actual structure is determined and used to modify the FEA model. The improved fit of the model demonstrates that GPA and NBED provide a powerful platform for routine and rapid characterization of strain in III-V semiconducting device systems leading to insights into device evolution during processing and future device optimization. | ||||
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| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000328634900025 | Publication Date | 2013-12-03 | |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; 1077-3118 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.411 | Times cited | 6 | Open Access | |
| Notes | Approved | Most recent IF: 3.411; 2013 IF: 3.515 | |||
| Call Number | UA @ lucian @ c:irua:136443 | Serial | 4513 | ||
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